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Detlef Klimm
Detlef Klimm
Leibniz Institute for Crystal Growth, Berlin, Germany
Подтвержден адрес электронной почты в домене ikz-berlin.de - Главная страница
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Год
On the bulk β-Ga2O3 single crystals grown by the Czochralski method
Z Galazka, K Irmscher, R Uecker, R Bertram, M Pietsch, A Kwasniewski, ...
Journal of Crystal Growth 404, 184-191, 2014
6962014
Czochralski growth and characterization of β‐Ga2O3 single crystals
Z Galazka, R Uecker, K Irmscher, M Albrecht, D Klimm, M Pietsch, ...
Crystal Research and Technology 45 (12), 1229-1236, 2010
5482010
Czochralski grown Ga2O3 crystals
Y Tomm, P Reiche, D Klimm, T Fukuda
Journal of crystal growth 220 (4), 510-514, 2000
4772000
Scaling-up of bulk β-Ga2O3 single crystals by the Czochralski method
Z Galazka, R Uecker, D Klimm, K Irmscher, M Naumann, M Pietsch, ...
ECS Journal of Solid State Science and Technology 6 (2), Q3007, 2016
3982016
Homoepitaxial growth of β‐Ga2O3 layers by metal‐organic vapor phase epitaxy
G Wagner, M Baldini, D Gogova, M Schmidbauer, R Schewski, M Albrecht, ...
physica status solidi (a) 211 (1), 27-33, 2014
2452014
Properties of rare-earth scandate single crystals (Re= Nd− Dy)
R Uecker, B Velickov, D Klimm, R Bertram, M Bernhagen, M Rabe, ...
Journal of Crystal Growth 310 (10), 2649-2658, 2008
1862008
Semiconducting Sn-doped β-Ga2O3 homoepitaxial layers grown by metal organic vapour-phase epitaxy
M Baldini, M Albrecht, A Fiedler, K Irmscher, D Klimm, R Schewski, ...
Journal of Materials Science 51, 3650-3656, 2016
1682016
On the crystallization of terbium aluminium garnet
S Ganschow, D Klimm, P Reiche, R Uecker
Crystal Research and Technology: Journal of Experimental and Industrial …, 1999
1501999
Identification of Zn-vacancy–hydrogen complexes in ZnO single crystals: A challenge to positron annihilation spectroscopy
G Brauer, W Anwand, D Grambole, J Grenzer, W Skorupa, J Čížek, ...
Physical Review B—Condensed Matter and Materials Physics 79 (11), 115212, 2009
1412009
Thermal stability of ε-Ga2O3 polymorph
R Fornari, M Pavesi, V Montedoro, D Klimm, F Mezzadri, I Cora, B Pécz, ...
Acta Materialia 140, 411-416, 2017
1252017
Czochralski-grown bulk β-Ga2O3 single crystals doped with mono-, di-, tri-, and tetravalent ions
Z Galazka, K Irmscher, R Schewski, IM Hanke, M Pietsch, S Ganschow, ...
Journal of Crystal Growth 529, 125297, 2020
1092020
Doping of Czochralski-grown bulk β-Ga2O3 single crystals with Cr, Ce and Al
Z Galazka, S Ganschow, A Fiedler, R Bertram, D Klimm, K Irmscher, ...
Journal of Crystal Growth 486, 82-90, 2018
1082018
Ultra-wide bandgap, conductive, high mobility, and high quality melt-grown bulk ZnGa2O4 single crystals
Z Galazka, S Ganschow, R Schewski, K Irmscher, D Klimm, ...
APL Materials 7 (2), 2019
1062019
Single crystal growth of the tetragonal tungsten bronze CaxBa1− xNb2O6 (x= 0.28; CBN-28)
M Eßer, M Burianek, D Klimm, M Mühlberg
Journal of crystal growth 240 (1-2), 1-5, 2002
892002
Melt growth, characterization and properties of bulk In2O3 single crystals
Z Galazka, R Uecker, K Irmscher, D Schulz, D Klimm, M Albrecht, ...
Journal of crystal growth 362, 349-352, 2013
842013
MgGa2O4 as a new wide bandgap transparent semiconducting oxide: growth and properties of bulk single crystals
Z Galazka, D Klimm, K Irmscher, R Uecker, M Pietsch, R Bertram, ...
physica status solidi (a) 212 (7), 1455-1460, 2015
822015
Bridgman-grown zinc oxide single crystals
D Schulz, S Ganschow, D Klimm, M Neubert, M Roßberg, M Schmidbauer, ...
Journal of crystal growth 296 (1), 27-30, 2006
742006
The growth of ZnO crystals from the melt
D Klimm, S Ganschow, D Schulz, R Fornari
Journal of Crystal Growth 310 (12), 3009-3013, 2008
722008
Bulk single crystals of β-Ga2O3 and Ga-based spinels as ultra-wide bandgap transparent semiconducting oxides
Z Galazka, S Ganschow, K Irmscher, D Klimm, M Albrecht, R Schewski, ...
Progress in Crystal Growth and Characterization of Materials 67 (1), 100511, 2021
662021
Large-lattice-parameter perovskite single-crystal substrates
R Uecker, R Bertram, M Brützam, Z Galazka, TM Gesing, C Guguschev, ...
Journal of Crystal Growth 457, 137-142, 2017
662017
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