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Vincenzo Fiorentini
Vincenzo Fiorentini
Associate professor, condensed matter physics, University of Cagliari, Italy
Подтвержден адрес электронной почты в домене dsf.unica.it - Главная страница
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Процитировано
Процитировано
Год
Spontaneous polarization and piezoelectric constants of III-V nitrides
F Bernardini, V Fiorentini, D Vanderbilt
Physical Review B 56 (16), R10024, 1997
40271997
Pyroelectric properties ofAl (In) GaN/GaN hetero-and quantum well structures
O Ambacher, J Majewski, C Miskys, A Link, M Hermann, M Eickhoff, ...
Journal of physics: condensed matter 14 (13), 3399, 2002
14372002
Evidence for nonlinear macroscopic polarization in III–V nitride alloy heterostructures
V Fiorentini, F Bernardini, O Ambacher
Applied physics letters 80 (7), 1204-1206, 2002
10572002
Effects of macroscopic polarization in III-V nitride multiple quantum wells
V Fiorentini, F Bernardini, F Della Sala, A Di Carlo, P Lugli
Physical Review B 60 (12), 8849, 1999
6951999
First-principles prediction of structure, energetics, formation enthalpy, elastic constants, polarization, and piezoelectric constants of AlN, GaN, and InN: Comparison of local …
A Zoroddu, F Bernardini, P Ruggerone, V Fiorentini
Physical Review B 64 (4), 045208, 2001
6242001
Macroscopic polarization and band offsets at nitride heterojunctions
F Bernardini, V Fiorentini
Physical Review B 57 (16), R9427, 1998
5561998
Extracting convergent surface energies from slab calculations
V Fiorentini, M Methfessel
Journal of Physics: Condensed Matter 8 (36), 6525, 1996
5111996
Nonlinear macroscopic polarization in III-V nitride alloys
F Bernardini, V Fiorentini
Physical Review B 64 (8), 085207, 2001
4392001
Spontaneous versus piezoelectric polarization in III–V nitrides: conceptual aspects and practical consequences
F Bernardini, V Fiorentini
physica status solidi (b) 216 (1), 391-398, 1999
4261999
Free-carrier screening of polarization fields in wurtzite GaN/InGaN laser structures
F Della Sala, A Di Carlo, P Lugli, F Bernardini, V Fiorentini, R Scholz, ...
Applied physics letters 74 (14), 2002-2004, 1999
3941999
Reconstruction mechanism of fcc transition metal (001) surfaces
V Fiorentini, M Methfessel, M Scheffler
Physical review letters 71 (7), 1051, 1993
3181993
Polarization-based calculation of the dielectric tensor of polar crystals
F Bernardini, V Fiorentini, D Vanderbilt
Physical review letters 79 (20), 3958, 1997
3001997
Accurate calculation of polarization-related quantities in semiconductors
F Bernardini, V Fiorentini, D Vanderbilt
Physical Review B 63 (19), 193201, 2001
2982001
Electronic and structural properties of GaN by the full-potential linear muffin-tin orbitals method: The role of the d electrons
V Fiorentini, M Methfessel, M Scheffler
Physical Review B 47 (20), 13353, 1993
2561993
Spontaneous 2-Dimensional Carrier Confinement at the -Type Interface
P Delugas, A Filippetti, V Fiorentini, DI Bilc, D Fontaine, P Ghosez
Physical review letters 106 (16), 166807, 2011
2522011
Theoretical evaluation of zirconia and hafnia as gate oxides for Si microelectronics
V Fiorentini, G Gulleri
Physical review letters 89 (26), 266101, 2002
2052002
Dielectric scaling of the self-energy scissor operator in semiconductors and insulators
V Fiorentini, A Baldereschi
Physical Review B 51 (23), 17196, 1995
1911995
Phase diagram and polarization of stable phases of (Ga1− xInx) 2O3
MB Maccioni, V Fiorentini
Applied physics express 9 (4), 041102, 2016
1732016
Theory of adsorption and surfactant effect of Sb on Ag (111)
S Oppo, V Fiorentini, M Scheffler
Physical review letters 71 (15), 2437, 1993
1691993
First-principles calculation of the piezoelectric tensor of III–V nitrides
F Bernardini, V Fiorentini
Applied physics letters 80 (22), 4145-4147, 2002
1652002
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Статьи 1–20