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Milan Tapajna
Milan Tapajna
Researcher at Institute of Electrical Engineering SAS
Подтвержден адрес электронной почты в домене savba.sk - Главная страница
Название
Процитировано
Процитировано
Год
A comprehensive analytical model for threshold voltage calculation in GaN based metal-oxide-semiconductor high-electron-mobility transistors
M Ťapajna, J Kuzmík
Applied Physics Letters 100 (11), 2012
1652012
Integrated optical and electrical analysis: Identifying location and properties of traps in AlGaN/GaN HEMTs during electrical stress
M Ťapajna, RJT Simms, Y Pei, UK Mishra, M Kuball
IEEE Electron Device Letters 31 (7), 662-664, 2010
1642010
Gate reliability investigation in normally-off p-type-GaN cap/AlGaN/GaN HEMTs under forward bias stress
M Ťapajna, O Hilt, E Bahat-Treidel, J Würfl, J Kuzmik
IEEE Electron Device Letters 37 (4), 385-388, 2016
1582016
Influence of threading dislocation density on early degradation in AlGaN/GaN high electron mobility transistors
M Ťapajna, SW Kaun, MH Wong, F Gao, T Palacios, UK Mishra, JS Speck, ...
Applied Physics Letters 99 (22), 2011
1062011
AlGaN/GaN HEMT device reliability and degradation evolution: Importance of diffusion processes
M Kuball, M Ťapajna, RJT Simms, M Faqir, UK Mishra
Microelectronics Reliability 51 (2), 195-200, 2011
1022011
Growth of high-dielectric-constant TiO2 films in capacitors with RuO2 electrodes
K Fröhlich, M Ťapajna, A Rosová, E Dobročka, K Hušeková, J Aarik, ...
Electrochemical and Solid-State Letters 11 (6), G19, 2008
982008
Gate insulation and drain current saturation mechanism in InAlN∕ GaN metal-oxide-semiconductor high-electron-mobility transistors
G Pozzovivo, J Kuzmik, S Golka, W Schrenk, G Strasser, D Pogany, ...
Applied Physics Letters 91 (4), 2007
962007
Bulk and interface trapping in the gate dielectric of GaN based metal-oxide-semiconductor high-electron-mobility transistors
M Ťapajna, M Jurkovič, L Válik, Š Haščík, D Gregušová, F Brunner, ...
Applied Physics Letters 102 (24), 2013
692013
Investigation of gate-diode degradation in normally-off p-GaN/AlGaN/GaN high-electron-mobility transistors
M Ťapajna, O Hilt, E Bahat-Treidel, J Würfl, J Kuzmík
Applied Physics Letters 107 (19), 2015
642015
Importance of impurity diffusion for early stage degradation in AlGaN/GaN high electron mobility transistors upon electrical stress
M Ťapajna, UK Mishra, M Kuball
Applied Physics Letters 97 (2), 2010
602010
Self-heating in GaN transistors designed for high-power operation
J Kuzmik, M Ťapajna, L Valik, M Molnar, D Donoval, C Fleury, D Pogany, ...
IEEE Transactions on Electron Devices 61 (10), 3429-3434, 2014
572014
Epitaxial growth of high-κ TiO2 rutile films on RuO2 electrodes
K Fröhlich, J Aarik, M Ťapajna, A Rosová, A Aidla, E Dobročka, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2009
542009
Impact of GaN cap on charges in Al2O3/(GaN/) AlGaN/GaN metal-oxide-semiconductor heterostructures analyzed by means of capacitance measurements and simulations
M Ťapajna, M Jurkovič, L Válik, Š Haščík, D Gregušová, F Brunner, ...
Journal of Applied Physics 116 (10), 2014
532014
Thermally induced voltage shift in capacitance–voltage characteristics and its relation to oxide/semiconductor interface states in Ni/Al2O3/InAlN/GaN heterostructures
M Ťapajna, K Čičo, J Kuzmík, D Pogany, G Pozzovivo, G Strasser, ...
Semiconductor science and technology 24 (3), 035008, 2009
482009
Hot-electron-related degradation in InAlN/GaN high-electron-mobility transistors
M Ťapajna, N Killat, V Palankovski, D Gregušová, K Čičo, JF Carlin, ...
IEEE Transactions on Electron Devices 61 (8), 2793-2801, 2014
462014
Evidence for impact ionisation in AlGaN/GaN HEMTs with InGaN back-barrier
N Killat, M Tapajna, M Faqir, T Palacios, M Kuball
Electronics letters 47 (6), 405-406, 2011
422011
Electrical properties of InAlN/GaN high electron mobility transistor with Al2O3, ZrO2, and GdScO3 gate dielectrics
K Čičo, K Hušeková, M Ťapajna, D Gregušová, R Stoklas, J Kuzmík, ...
Journal of Vacuum Science & Technology B 29 (1), 2011
392011
Adjustment of threshold voltage in AlN/AlGaN/GaN high-electron mobility transistors by plasma oxidation and Al2O3 atomic layer deposition overgrowth
D Gregušová, M Jurkovič, Š Haščík, M Blaho, A Seifertová, J Fedor, ...
Applied Physics Letters 104 (1), 2014
352014
Precise determination of metal effective work function and fixed oxide charge in MOS capacitors with high-κ dielectric
M Ťapajna, K Hušeková, JP Espinos, L Harmatha, K Fröhlich
Materials science in semiconductor processing 9 (6), 969-974, 2006
342006
Growth of gadolinium oxide films for advanced MOS structure
R Lupták, K Fröhlich, A Rosová, K Hušeková, M Ťapajna, D Machajdı́k, ...
Microelectronic engineering 80, 154-157, 2005
342005
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