A Tersoff‐based interatomic potential for wurtzite AlN M Tungare, Y Shi, N Tripathi, P Suvarna, F Shahedipour‐Sandvik physica status solidi (a) 208 (7), 1569-1572, 2011 | 60 | 2011 |
Single photon counting UV solar-blind detectors using silicon and III-nitride materials S Nikzad, M Hoenk, AD Jewell, JJ Hennessy, AG Carver, TJ Jones, ... Sensors 16 (6), 927, 2016 | 57 | 2016 |
Design and growth of visible-blind and solar-blind III-N APDs on sapphire substrates P Suvarna, M Tungare, JM Leathersich, P Agnihotri, ... Journal of electronic materials 42, 854-858, 2013 | 27 | 2013 |
Visible-blind APD heterostructure design with superior field confinement and low operating voltage J Bulmer, P Suvarna, J Leathersich, J Marini, I Mahaboob, N Newman, ... IEEE Photonics Technology Letters 28 (1), 39-42, 2015 | 25 | 2015 |
The effect of carbon impurities on lightly doped MOCVD GaN Schottky diodes RP Tompkins, TA Walsh, MA Derenge, KW Kirchner, S Zhou, CB Nguyen, ... Journal of Materials Research 26 (23), 2895-2900, 2011 | 21 | 2011 |
Ion implantation-based edge termination to improve III-N APD reliability and performance P Suvarna, J Bulmer, JM Leathersich, J Marini, I Mahaboob, J Hennessy, ... IEEE Photonics Technology Letters 27 (5), 498-501, 2014 | 19 | 2014 |
HVPE GaN for high power electronic Schottky diodes RP Tompkins, TA Walsh, MA Derenge, KW Kirchner, S Zhou, CB Nguyen, ... Solid-state electronics 79, 238-243, 2013 | 18 | 2013 |
Novel Cs-Free GaN Photocathodes N Tripathi, LD Bell, S Nikzad, M Tungare, PH Suvarna, FS Sandvik Journal of electronic materials 40, 382-387, 2011 | 16 | 2011 |
Deposition of GaN films on crystalline rare earth oxides by MOCVD J Leathersich, E Arkun, A Clark, P Suvarna, J Marini, R Dargis, ... Journal of crystal growth 399, 49-53, 2014 | 15 | 2014 |
GaN power schottky diodes with drift layers grown on four substrates RP Tompkins, JR Smith, KW Kirchner, KA Jones, JH Leach, K Udwary, ... Journal of electronic materials 43, 850-856, 2014 | 15 | 2014 |
Homoepitaxial growth of non-polar AlN crystals using molecular dynamics simulations J Leathersich, P Suvarna, M Tungare, FS Shahedipour-Sandvik Surface science 617, 36-41, 2013 | 13 | 2013 |
Enhanced performance of an AlGaN/GaN high electron mobility transistor on Si by means of improved adatom diffusion length during MOCVD epitaxy F Shahedipour-Sandvik, J Leathersich, RP Tompkins, P Suvarna, ... Semiconductor science and technology 28 (7), 074002, 2013 | 9 | 2013 |
Annealing studies of AlN capped, MOCVD grown GaN films MA Derenge, KW Kirchner, KA Jones, P Suvarna, S Shahedipour-Sandvik Solid-state electronics 101, 23-28, 2014 | 6 | 2014 |
Crack-free III-nitride structures (> 3.5 μm) on silicon M Tungare, JM Leathersich, N Tripathi, P Suvarna, ... MRS Online Proceedings Library (OPL) 1324, mrss11-1324-d01-04, 2011 | 6 | 2011 |
F.(Shadi) Shahedipour-Sandvik J Leathersich, E Arkun, A Clark, P Suvarna, J Marini, R Dargis J. Cryst. Growth 399, 49, 2014 | 5 | 2014 |
Modification of dislocation behavior in GaN overgrown on engineered AlN film-on-bulk Si substrate M Tungare, X Weng, JM Leathersich, P Suvarna, JM Redwing Journal of Applied Physics 113 (16), 2013 | 5 | 2013 |
Development of small unit cell avalanche photodiodes for UV imaging applications AK Sood, RE Welser, RA Richwine, YR Puri, RD Dupuis, JH Ryou, ... Advanced Photon Counting Techniques VI 8375, 158-168, 2012 | 4 | 2012 |
Ion-Implantation-Induced Damage Characteristics Within AlN and Si for GaN-on-Si Epitaxy JM Leathersich, M Tungare, X Weng, P Suvarna, P Agnihotri, M Evans, ... Journal of electronic materials 42, 833-837, 2013 | 2 | 2013 |
III-Nitride devices on Si: Challenges and opportunities F Shahedipour-Sandvik, M Tungare, J Leathersich, P Suvarna, ... 2011 International Semiconductor Device Research Symposium (ISDRS), 1-2, 2011 | 2 | 2011 |
Atomic-layer Deposition for Improved Performance of III-N Avalanche Photodiodes J Hennessy, LD Bell, S Nikzad, P Suvarna, JM Leathersich, J Marini, ... MRS Online Proceedings Library (OPL) 1635, 23-28, 2014 | 1 | 2014 |