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Ho-Hyun Nahm
Ho-Hyun Nahm
Research Assistant Professor, Department of Physics, KAIST
Подтвержден адрес электронной почты в домене kaist.ac.kr - Главная страница
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Год
Novel high-κ dielectrics for next-generation electronic devices screened by automated ab initio calculations
K Yim, Y Yong, J Lee, K Lee, HH Nahm, J Yoo, C Lee, C Seong Hwang, ...
NPG Asia Materials 7 (6), e190-e190, 2015
2492015
Instability of amorphous oxide semiconductors via carrier‐mediated structural transition between disorder and peroxide state
HH Nahm, YS Kim, DH Kim
physica status solidi (b), 2012
1272012
Hydrogen Bistability as the Origin of Photo‐Bias‐Thermal Instabilities in Amorphous Oxide Semiconductors
Y Kang, BD Ahn, JH Song, YG Mo, HH Nahm, S Han, JK Jeong
Advanced Electronic Materials 1 (7), 1400006, 2015
972015
First-principles study of microscopic properties of the Nb antisite in : Comparison to phenomenological polaron theory
HH Nahm, CH Park
Physical Review B—Condensed Matter and Materials Physics 78 (18), 184108, 2008
852008
Property database for single-element doping in ZnO obtained by automated first-principles calculations
K Yim, J Lee, D Lee, M Lee, E Cho, HS Lee, HH Nahm, S Han
Scientific reports 7 (1), 40907, 2017
812017
Cation composition effects on electronic structures of In-Sn-Zn-O amorphous semiconductors
JY Noh, H Kim, HH Nahm, YS Kim, D Hwan Kim, BD Ahn, JH Lim, ...
Journal of Applied Physics 113 (18), 2013
792013
Bistability of hydrogen in ZnO: Origin of doping limit and persistent photoconductivity
HH Nahm, CH Park, YS Kim
Scientific Reports 4 (1), 4124, 2014
732014
Spontaneous decays of magneto-elastic excitations in non-collinear antiferromagnet (Y,Lu)MnO3
J Oh, MD Le, HH Nahm, H Sim, J Jeong, TG Perring, H Woo, K Nakajima, ...
Nature communications 7 (1), 13146, 2016
722016
Interface Control of Ferroelectricity in an SrRuO3/BaTiO3/SrRuO3 Capacitor and its Critical Thickness
YJ Shin, Y Kim, SJ Kang, HH Nahm, P Murugavel, JR Kim, MR Cho, ...
Advanced Materials 29 (19), 1602795, 2017
692017
Reversible ferromagnetic spin ordering governed by hydrogen in Co-doped ZnO semiconductor
YC Cho, SJ Kim, S Lee, SJ Kim, CR Cho, HH Nahm, CH Park, IK Jeong, ...
Applied Physics Letters 95 (17), 172514-172514-3, 2009
632009
Undercoordinated indium as an intrinsic electron-trap center in amorphous InGaZnO4
HH Nahm, YS Kim
NPG Asia Materials 6, e143, 2014
462014
GW calculations on post-transition-metal oxides
Y Kang, G Kang, HH Nahm, SH Cho, YS Park, S Han
Physical Review B 89 (16), 165130, 2014
442014
Anomalous Defect Dependence of Thermal Conductivity in Epitaxial WO3 Thin Films
S Ning, SC Huberman, Z Ding, HH Nahm, YH Kim, HS Kim, G Chen, ...
Advanced Materials 31 (43), 1903738, 2019
422019
Light-induced peroxide formation in ZnO: Origin of persistent photoconductivity
Y Kang, HH Nahm, S Han
Scientific reports 6 (1), 35148, 2016
402016
Intrinsic nature of visible-light absorption in amorphous semiconducting oxides
Y Kang, H Song, HH Nahm, SH Jeon, Y Cho, H S.
APL Materials 2, 032108, 2014
292014
Microscopic structure of hydrogen impurity in LiNbO3
HH Nahm, CH Park
Applied Physics Letters 78 (24), 3812-3814, 2001
292001
The resonant interaction between anions or vacancies in ZnON semiconductors and their effects on thin film device properties
J Park, HJ Jeong, HM Lee, HH Nahm, JS Park
Scientific reports 7, 2017
262017
Electronic structures of oxygen-deficient Ta2O5
Y Yang, HH Nahm, O Sugino, T Ohno1
AIP Advances 3, 042101, 2013
262013
Harnessing the topotactic transition in oxide heterostructures for fast and high-efficiency electrochromic applications
JS Lim, J Lee, BJ Lee, YJ Kim, HS Park, J Suh, HH Nahm, SW Kim, ...
Science advances 6 (41), eabb8553, 2020
212020
Oxygen Partial Pressure during Pulsed Laser Deposition: Deterministic Role on Thermodynamic Stability of Atomic Termination Sequence at SrRuO3/BaTiO3 Interface
YJ Shin, L Wang, Y Kim, HH Nahm, D Lee, JR Kim, SM Yang, JG Yoon, ...
ACS Appl. Mater. Interfaces, 2017
202017
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