| Method for fabrication of semipolar (Al, In, Ga, B) N based light emitting diodes H Sato, H Hirasawa, RB Chung, SP DenBaars, JS Speck, S Nakamura US Patent 8,148,713, 2012 | 604 | 2012 |
| High-efficiency single-quantum-well green and yellow-green light-emitting diodes on semipolar (2021) GaN substrates S Yamamoto, Y Zhao, CC Pan, RB Chung, K Fujito, J Sonoda, ... Applied physics express 3 (12), 122102, 2010 | 220 | 2010 |
| Optical properties of yellow light-emitting diodes grown on semipolar (112¯ 2) bulk GaN substrates H Sato, RB Chung, H Hirasawa, N Fellows, H Masui, F Wu, M Saito, ... Applied Physics Letters 92 (22), 2008 | 211 | 2008 |
| High power and high efficiency green light emitting diode on free‐standing semipolar (11 ̄2 2) bulk GaN substrate H Sato, A Tyagi, H Zhong, N Fellows, RB Chung, M Saito, K Fujito, ... physica status solidi (RRL)–Rapid Research Letters 1 (4), 162-164, 2007 | 139 | 2007 |
| MOCVD GROWTH TECHNIQUE FOR PLANAR SEMIPOLAR (Al, In, Ga, B) N BASED LIGHT EMITTING DIODES H Sato, RB Chung, F Wu, JS Speck, SP DenBaars, S Nakamura US Patent App. 12/419,128, 2009 | 138 | 2009 |
| High quality AlN grown on SiC by metal organic chemical vapor deposition Z Chen, S Newman, D Brown, R Chung, S Keller, UK Mishra, ... Applied Physics Letters 93 (19), 191906-191906-3, 2008 | 123 | 2008 |
| Optoelectronic device based on non-polar and semi-polar aluminum indium nitride and aluminum indium gallium nitride alloys RB Chung, Z Chen, JS Speck, SP DenBaars, S Nakamura US Patent 8,084,763, 2011 | 112 | 2011 |
| High power and high efficiency blue light emitting diode on freestanding semipolar (101¯ 1¯) bulk GaN substrate H Zhong, A Tyagi, NN Fellows, F Wu, RB Chung, M Saito, K Fujito, ... Applied physics letters 90 (23), 2007 | 112 | 2007 |
| High optical polarization ratio from semipolar (202 1) blue-green InGaN/GaN light-emitting diodes Y Zhao, S Tanaka, Q Yan, CY Huang, RB Chung, CC Pan, K Fujito, ... Applied physics letters 99 (5), 2011 | 110 | 2011 |
| Effects of threading dislocation density on the gate leakage of AlGaN/GaN heterostructures for high electron mobility transistors SW Kaun, MH Wong, S Dasgupta, S Choi, R Chung, UK Mishra, JS Speck Applied physics express 4 (2), 4101, 2011 | 92 | 2011 |
| Semipolar (1011) InGaN/GaN laser diodes on bulk GaN substrates A Tyagi, H Zhong, RB Chung, DF Feezell, M Saito, K Fujito, JS Speck, ... Japanese Journal of Applied Physics 46 (5L), L444, 2007 | 72 | 2007 |
| Growth study and impurity characterization of AlxIn1− xN grown by metal organic chemical vapor deposition RB Chung, F Wu, R Shivaraman, S Keller, SP DenBaars, JS Speck, ... Journal of crystal growth 324 (1), 163-167, 2011 | 65 | 2011 |
| Growth of AlGaN/GaN heterojunction field effect transistors on semi-insulating GaN using an AlGaN interlayer Z Chen, Y Pei, S Newman, R Chu, D Brown, R Chung, S Keller, ... Applied Physics Letters 94 (11), 112108-112108-3, 2009 | 53 | 2009 |
| The reduction of efficiency droop by Al0. 82In0. 18N/GaN superlattice electron blocking layer in (0001) oriented GaN-based light emitting diodes RB Chung, C Han, CC Pan, N Pfaff, JS Speck, SP DenBaars, S Nakamura Applied Physics Letters 101 (13), 2012 | 50 | 2012 |
| Demonstration of high power blue-green light emitting diode on semipolar (1122) bulk GaN substrate H Zhong, A Tyagi, NN Fellows, RB Chung, M Saito, K Fujito, JS Speck, ... Electronics Letters 43 (15), 825-827, 2007 | 44 | 2007 |
| Highly efficient broad‐area blue and white light‐emitting diodes on bulk GaN substrates KJ Vampola, NN Fellows, H Masui, SE Brinkley, M Furukawa, RB Chung, ... physica status solidi (a) 206 (2), 200-202, 2009 | 37 | 2009 |
| Growth of AlGaN/GaN/AlGaN double heterojunction field-effect transistors and the observation of a compositional pulling effect Z Chen, Y Pei, S Newman, D Brown, R Chung, S Keller, SP DenBaars, ... Applied Physics Letters 94 (17), 171117-171117-3, 2009 | 36 | 2009 |
| 384 nm laser diode grown on a (202¯ 1) semipolar relaxed AlGaN buffer layer DA Haeger, EC Young, RB Chung, F Wu, NA Pfaff, M Tsai, K Fujito, ... Applied Physics Letters 100 (16), 2012 | 35 | 2012 |
| Electroluminescence characterization of (2021) InGaN/GaN light emitting diodes with various wavelengths RB Chung, YD Lin, I Koslow, N Pfaff, H Ohta, J Ha, SP DenBaars, ... Japanese Journal of Applied Physics 49 (7R), 070203, 2010 | 35 | 2010 |
| Fluorine-based plasma treatment for hetero-epitaxial β-Ga2O3 MOSFETs YJ Jeong, JY Yang, CH Lee, R Park, G Lee, RBK Chung, G Yoo Applied Surface Science 558, 149936, 2021 | 22 | 2021 |
Steven DenBaarsProfessor of Materials, University of California Santa BarbaraПодтвержден адрес электронной почты в домене engineering.ucsb.edu
