Proton-induced dehydrogenation of defects in AlGaN/GaN HEMTs J Chen, YS Puzyrev, CX Zhang, EX Zhang, MW McCurdy, DM Fleetwood, ...
IEEE Transactions on Nuclear Science 60 (6), 4080-4086, 2013
121 2013 Influence of LDD Spacers and H+ Transport on the Total-Ionizing-Dose Response of 65-nm MOSFETs Irradiated to Ultrahigh Doses F Faccio, G Borghello, E Lerario, DM Fleetwood, RD Schrimpf, H Gong, ...
IEEE Transactions on Nuclear Science 65 (1), 164-174, 2017
118 2017 Effects of applied bias and high field stress on the radiation response of GaN/AlGaN HEMTs J Chen, YS Puzyrev, R Jiang, EX Zhang, MW McCurdy, DM Fleetwood, ...
IEEE Transactions on Nuclear Science 62 (6), 2423-2430, 2015
113 2015 Process dependence of proton-induced degradation in GaN HEMTs T Roy, EX Zhang, YS Puzyrev, DM Fleetwood, RD Schrimpf, BK Choi, ...
IEEE Transactions on Nuclear Science 57 (6), 3060-3065, 2010
111 2010 Fin-width dependence of ionizing radiation-induced subthreshold-swing degradation in 100-nm-gate-length FinFETs F El Mamouni, EX Zhang, RD Schrimpf, DM Fleetwood, RA Reed, ...
IEEE Transactions on Nuclear Science 56 (6), 3250-3255, 2009
109 2009 Radiation-induced defect evolution and electrical degradation of AlGaN/GaN high-electron-mobility transistors YS Puzyrev, T Roy, EX Zhang, DM Fleetwood, RD Schrimpf, ...
IEEE Transactions on Nuclear Science 58 (6), 2918-2924, 2011
96 2011 Laser-and heavy ion-induced charge collection in bulk FinFETs F El-Mamouni, EX Zhang, ND Pate, N Hooten, RD Schrimpf, RA Reed, ...
IEEE Transactions on Nuclear Science 58 (6), 2563-2569, 2011
90 2011 Analysis of TID process, geometry, and bias condition dependence in 14-nm FinFETs and implications for RF and SRAM performance MP King, X Wu, M Eller, S Samavedam, MR Shaneyfelt, AI Silva, ...
IEEE Transactions on Nuclear Science 64 (1), 285-292, 2016
82 2016 Bias dependence of total ionizing dose effects in SiGe-MOS FinFETs GX Duan, CX Zhang, EX Zhang, J Hachtel, DM Fleetwood, RD Schrimpf, ...
IEEE Transactions on Nuclear Science 61 (6), 2834-2838, 2014
82 2014 Geometry dependence of total-dose effects in bulk FinFETs I Chatterjee, EX Zhang, BL Bhuva, RA Reed, ML Alles, NN Mahatme, ...
IEEE Transactions on Nuclear Science 61 (6), 2951-2958, 2014
78 2014 Impact of proton irradiation on deep level states in n-GaN Z Zhang, AR Arehart, E Cinkilic, J Chen, EX Zhang, DM Fleetwood, ...
Applied Physics Letters 103 (4), 2013
77 2013 Low-energy X-ray and ozone-exposure induced defect formation in graphene materials and devices EX Zhang, AKM Newaz, B Wang, S Bhandaru, CX Zhang, DM Fleetwood, ...
IEEE transactions on nuclear science 58 (6), 2961-2967, 2011
75 2011 Total-ionizing-dose radiation effects in AlGaN/GaN HEMTs and MOS-HEMTs X Sun, OI Saadat, J Chen, EX Zhang, S Cui, T Palacios, DM Fleetwood, ...
IEEE Transactions on Nuclear Science 60 (6), 4074-4079, 2013
74 2013 Effects of proton-induced displacement damage on gallium nitride HEMTs in RF power amplifier applications NE Ives, J Chen, AF Witulski, RD Schrimpf, DM Fleetwood, RW Bruce, ...
IEEE Transactions on Nuclear Science 62 (6), 2417-2422, 2015
70 2015 Charge Trapping in Al2 O3 /2 O3 -Based MOS Capacitors MA Bhuiyan, H Zhou, R Jiang, EX Zhang, DM Fleetwood, DY Peide, ...
IEEE Electron Device Letters 39 (7), 1022-1025, 2018
67 2018 The Impact of X-Ray and Proton Irradiation on JS Bi, ZS Han, EX Zhang, MW McCurdy, RA Reed, RD Schrimpf, ...
IEEE Transactions on Nuclear Science 60 (6), 4540-4546, 2013
67 2013 Temperature-dependence and microscopic origin of low frequency 1/f noise in GaN/AlGaN high electron mobility transistors T Roy, EX Zhang, YS Puzyrev, X Shen, DM Fleetwood, RD Schrimpf, ...
Applied Physics Letters 99 (20), 2011
66 2011 Effectiveness of SEL hardening strategies and the latchup domino effect NA Dodds, NC Hooten, RA Reed, RD Schrimpf, JH Warner, NJH Roche, ...
IEEE Transactions on Nuclear Science 59 (6), 2642-2650, 2012
65 2012 Total ionizing dose radiation effects on 14 nm FinFET and SOI UTBB technologies H Hughes, P McMarr, M Alles, E Zhang, C Arutt, B Doris, D Liu, ...
2015 IEEE Radiation Effects Data Workshop (REDW), 1-6, 2015
64 2015 Multiple defects cause degradation after high field stress in AlGaN/GaN HEMTs R Jiang, X Shen, J Fang, P Wang, EX Zhang, J Chen, DM Fleetwood, ...
IEEE Transactions on Device and Materials Reliability 18 (3), 364-376, 2018
63 2018 
Daniel M. FleetwoodProfessor of Electrical Engineering, Vanderbilt UniversityПодтвержден адрес электронной почты в домене vanderbilt.edu