Общедоступные статьи - Joan Marc RafíПодробнее...
9 статей недоступны нигде
Analysis of the Switching Variability in -Based RRAM Devices
MB Gonzalez, JM Rafí, O Beldarrain, M Zabala, F Campabadal
IEEE Transactions on Device and Materials Reliability 14 (2), 769-771, 2014
Финансирование: Government of Spain
Blistering of atomic layer deposition Al2O3 layers grown on silicon and its effect on metal–insulator–semiconductor structures
O Beldarrain, M Duch, M Zabala, JM Rafí, MB González, F Campabadal
Journal of Vacuum Science & Technology A 31 (1), 2013
Финансирование: Government of Spain
Charge trapping analysis of Al2O3 films deposited by atomic layer deposition using H2O or O3 as oxidant
MB González, JM Rafí, O Beldarrain, M Zabala, F Campabadal
Journal of Vacuum Science & Technology B 31 (1), 2013
Финансирование: Government of Spain
IBIC analysis of SiC detectors developed for fusion applications
MC Jiménez-Ramos, JG López, AG Osuna, M Rodríguez-Ramos, ...
Radiation Physics and Chemistry 177, 109100, 2020
Финансирование: Government of Spain
Charge storage and retention in electret dielectric layers for energy harvesting applications
A Díaz-Ballester, S Castillo-Anguera, JM Rafi, R Gómez-Martínez, ...
2014 IEEE 9th IberoAmerican Congress on Sensors, 1-4, 2014
Финансирование: Government of Spain
Thin dielectric films grown by atomic layer deposition: Properties and applications
F Campabadal, JM Rafi, MB González, M Zabala, O Beldarrain, MC Acero, ...
2013 Spanish Conference on Electron Devices, 1-4, 2013
Финансирование: Government of Spain
Study of Geometrical Effects in Charge Pumping Current for Lateral SiC nMOSFETs Electrical Characterization
M Florentin, JM Rafi, F Chevalier, V Soler, L Konczewicz, S Contreras, ...
Materials Science Forum 821, 717-720, 2015
Финансирование: Government of Spain
Exploring the field-effect control of breakdown paths in lateral W/HfO2/W structures
X Saura, X Lian, D Jimenez, E Miranda, X Borrisé, JM Rafí, ...
2013 14th International Conference on Ultimate Integration on Silicon (ULIS …, 2013
Финансирование: Government of Spain
Defect assessment and leakage control in atomic layer deposited Al2O3 and HfO2 dielectrics
MB Gonzalez, JM Rafi, O Beldarrain, M Zabala, F Campabadal
2013 Spanish Conference on Electron Devices, 277-280, 2013
Финансирование: Government of Spain
26 статей доступны в некоторых источниках
The ATLAS experiment at the CERN large hadron collider
SM Alam, B Athar, S Timm, F Wappler, L Zhichao, H Ahmed, ...
Journal of instrumentation 3 (8), S08003-S08003, 2008
Финансирование: Swiss National Science Foundation
Electron, neutron and proton irradiation effects on SiC radiation detectors
JM Rafí, G Pellegrini, P Godignon, S Otero Ugobono, G Rius, I Tsunoda, ...
IEEE Transactions on Nuclear Science 67 (12), 2481 - 2489, 2020
Финансирование: European Commission, Government of Spain
2 MeV electron irradiation effects on the electrical characteristics of metal–oxide–silicon capacitors with atomic layer deposited Al2O3, HfO2 and nanolaminated dielectrics
JM Rafí, F Campabadal, H Ohyama, K Takakura, I Tsunoda, M Zabala, ...
Solid-state electronics 79, 65-74, 2013
Финансирование: Government of Spain
Impact of boron diffusion on oxynitrided gate oxides in 4H-SiC metal-oxide-semiconductor field-effect transistors
M Cabello, V Soler, J Montserrat, J Rebollo, JM Rafí, P Godignon
Applied Physics Letters 111 (4), 2017
Финансирование: Government of Spain
Germanium doping for improved silicon substrates and devices
J Vanhellemont, J Chen, J Lauwaert, H Vrielinck, W Xu, D Yang, JM Rafí, ...
Journal of crystal growth 317 (1), 8-15, 2011
Финансирование: Research Foundation (Flanders)
Initial leakage current related to extrinsic breakdown in HfO2/Al2O3 nanolaminate ALD dielectrics
C Martínez-Domingo, X Saura, A Conde, D Jiménez, E Miranda, JM Rafí, ...
Microelectronic engineering 88 (7), 1380-1383, 2011
Финансирование: Government of Spain
Gamma and proton irradiation effects and thermal stability of electrical characteristics of metal-oxide-silicon capacitors with atomic layer deposited Al2O3 dielectric
JM Rafí, G Pellegrini, V Fadeyev, Z Galloway, HFW Sadrozinski, ...
Solid-State Electronics 116, 38-45, 2016
Финансирование: US Department of Energy, Government of Spain
Threshold switching and conductance quantization in Al/HfO2/Si (p) structures
X Saura, E Miranda, D Jimenez, S Long, M Liu, JM Rafi, F Campabadal, ...
Japanese Journal of Applied Physics 52 (4S), 04CD06, 2013
Финансирование: Government of Spain
Four-quadrant silicon and silicon carbide photodiodes for beam position monitor applications: electrical characterization and electron irradiation effects
JM Rafí, G Pellegrini, P Godignon, D Quirion, S Hidalgo, O Matilla, ...
Journal of Instrumentation 13 (01), C01045, 2018
Финансирование: European Commission, Government of Spain
Charge trapping and electrical degradation in atomic layer deposited Al2O3 films
MB Gonzalez, JM Rafí, O Beldarrain, M Zabala, F Campabadal
Microelectronic engineering 109, 57-59, 2013
Финансирование: Government of Spain
10 μ m-thick four-quadrant transmissive silicon photodiodes for beam position monitor application: electrical characterization and gamma irradiation effects
JM Rafí, G Pellegrini, D Quirion, S Hidalgo, P Godignon, O Matilla, ...
Journal of Instrumentation 12 (01), C01004, 2017
Финансирование: European Commission, Government of Spain
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