| A theoretical study of the critical radius of precipitates and its application to silicon oxide in silicon J Vanhellemont, C Claeys Journal of applied physics 62 (9), 3960-3967, 1987 | 244 | 1987 |
| Micro‐Raman study of stress distribution in local isolation structures and correlation with transmission electron microscopy I De Wolf, J Vanhellemont, A Romano‐Rodríguez, H Norström, HE Maes Journal of Applied Physics 71 (2), 898-906, 1992 | 197 | 1992 |
| Brother silicon, sister germanium J Vanhellemont, E Simoen journal of the electrochemical society 154 (7), H572, 2007 | 149 | 2007 |
| Film‐edge‐induced dislocation generation in silicon substrates. I. Theoretical model J Vanhellemont, S Amelinckx, C Claeys Journal of applied physics 61 (6), 2170-2175, 1987 | 125* | 1987 |
| Diffusion limited oxygen precipitation in silicon: Precipitate growth kinetics and phase formation J Vanhellemont Journal of applied physics 78 (6), 4297-4299, 1995 | 114 | 1995 |
| On the solubility and diffusivity of the intrinsic point defects in germanium J Vanhellemont, P Śpiewak, K Sueoka Journal of applied physics 101 (3), 2007 | 109 | 2007 |
| Impact of oxygen related extended defects on silicon diode characteristics J Vanhellemont, E Simoen, A Kaniava, M Libezny, C Claeys Journal of Applied Physics 77 (11), 5669-5676, 1995 | 107 | 1995 |
| Impact of Fe and Cu contamination on the minority carrier lifetime of silicon substrates ALP Rotondaro, TQ Hurd, A Kaniava, J Vanhellemont, E Simoen, ... Journal of the Electrochemical Society 143 (9), 3014, 1996 | 100 | 1996 |
| Dependence of carrier lifetime in germanium on resisitivity and carrier injection level E Gaubas, J Vanhellemont Applied physics letters 89 (14), 2006 | 97 | 2006 |
| Density functional theory study on the impact of heavy doping on Si intrinsic point defect properties and implications for single crystal growth from a melt K Sueoka, E Kamiyama, J Vanhellemont Journal of Applied Physics 114 (15), 2013 | 87 | 2013 |
| On the diffusion and activation of n-type dopants in Ge J Vanhellemont, E Simoen Materials Science in Semiconductor Processing 15 (6), 642-655, 2012 | 79 | 2012 |
| Extended Defects Formation in Si Crystals by Clustering of Intrinsic Point Defects Studied by in‐situ Electron Irradiation in an HREM L Fedina, A Gutakovskii, A Aseev, J Van Landuyt, J Vanhellemont physica status solidi (a) 171 (1), 147-158, 1999 | 71 | 1999 |
| Evaluation of the crystalline quality of β-Ga2O3 films by optical absorption measurements K Takakura, D Koga, H Ohyama, JM Rafi, Y Kayamoto, M Shibuya, ... Physica B: Condensed Matter 404 (23-24), 4854-4857, 2009 | 70 | 2009 |
| On the diffusion and activation of ion-implanted n-type dopants in germanium E Simoen, J Vanhellemont Journal of Applied Physics 106 (10), 2009 | 70 | 2009 |
| Rod‐like defects in silicon: Coesite or hexagonal silicon? H Bender, J Vanhellemont Physica status solidi (a) 107 (2), 455-467, 1988 | 69 | 1988 |
| Comparative study of carrier lifetime dependence on dopant concentration in silicon and germanium E Gaubas, J Vanhellemont Journal of The Electrochemical Society 154 (3), H231, 2007 | 68 | 2007 |
| A fast preparation technique for high-quality plan view and cross-section TEM specimens of semiconducting materials A Romano, J Vanhellemont, H Bender, JR Morante Ultramicroscopy 31 (2), 183-192, 1989 | 63 | 1989 |
| Intrinsic point defect incorporation in silicon single crystals grown from a melt, revisited J Vanhellemont Journal of Applied Physics 110 (6), 2011 | 61 | 2011 |
| A simple technique for the separation of bulk and surface recombination parameters in silicon E Gaubas, J Vanhellemont Journal of Applied Physics 80 (11), 6293-6297, 1996 | 60 | 1996 |
| Numerical aspects of the implementation of effective-medium approximation models in spectroscopic ellipsometry regression software PJ Rouseel, J Vanhellemont, HE Maes Thin solid films 234 (1-2), 423-427, 1993 | 60 | 1993 |
C. ClaeysProfessor KU LeuvenПодтвержден адрес электронной почты в домене kuleuven.be
