Initial leakage current related to extrinsic breakdown in HfO 2/Al 2 O 3 nanolaminate ALD dielectrics C Martínez-Domingo, X Saura, A Conde, D Jiménez, E Miranda, JM Rafí, ... Microelectronic Engineering 88 (7), 1380-1383, 2011 | 21 | 2011 |
Threshold switching and conductance quantization in Al/HfO2/Si (p) structures X Saura, E Miranda, D Jimenez, S Long, M Liu, JM Rafi, F Campabadal, ... Japanese Journal of Applied Physics 52 (4S), 04CD06, 2013 | 20 | 2013 |
Modeling the breakdown statistics of Al< inf> 2</inf> O< inf> 3</inf>/HfO< inf> 2</inf> nanolaminates grown by atomic-layer-deposition A Conde, C Martinez, X Saura, D Jimenez, E Miranda, JM Rafi, ... Ultimate Integration on Silicon (ULIS), 2011 12th International Conference …, 2011 | 19* | 2011 |
Many-particle transport in the channel of quantum wire double-gate field-effect transistors with charged atomistic impurities G Albareda, X Saura, X Oriols, J Suné Journal of Applied Physics 108 (4), 2010 | 12 | 2010 |
Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics X Saura, J Suñé, S Monaghan, PK Hurley, E Miranda Journal of Applied Physics 114 (15), 2013 | 10 | 2013 |
Failure Analysis of MIM and MIS Structures Using Point-to-Event Distance and Angular Probability Distributions X Saura, S Monaghan, PK Hurley, J Suñé, E Miranda Device and Materials Reliability, IEEE Transactions on 14 (4), 1080-1090, 2014 | 4 | 2014 |
Field-effect control of breakdown paths in HfO2 based MIM structures X Saura, X Lian, D Jiménez, E Miranda, X Borrisé, F Campabadal, J Suñé Microelectronics Reliability 53 (9), 1346-1350, 2013 | 3 | 2013 |
Direct observation of the generation of breakdown spots in MIM structures under constant voltage stress X Saura, D Moix, J Suñé, PK Hurley, E Miranda Microelectronics Reliability 53 (9-11), 1257-1260, 2013 | 3 | 2013 |
Study on the spatial generation of breakdown spots in MIM capacitors with different aspect ratios X Saura, M Riccio, G De Falco, J Suñé, A Irace, E Miranda Facta Universitatis, Series: Electronics and Energetics 28 (2), 177-192, 2015 | 1 | 2015 |
Filamentos conductores de ruptura dieléctrica en aislantes delgados X Saura, E Miranda, J Suñé Universitat Autònoma de Barcelona,, 2015 | 1 | 2015 |
Exploring the field-effect control of breakdown paths in lateral W/HfO2/W structures X Saura, X Lian, D Jimenez, E Miranda, X Borrisé, X Borrisé, JM Rafí, ... | | 2013 |
Threshold switching and conductance quantization in electroformed Al/HfO2/Si (p) structures J Suñé, E Miranda, D Jiménez, C Martínez-Domingo, X Saura, S Long, ... Japanese Journal of Applied Physics, 2012 | | 2012 |
Spin polarized transport in semiconductors–Challenges for... WDGMIN PRESENCE, G Albareda, X Saura, X Oriols, R Rurali, J Suñé | | |
MONTE CARLO MODELLING OF ELECTRON TRANSPORT IN SI QUANTUM-WIRE DOUBLE-GATE MOSFETs IN PRESENCE OF ATOMISTIC IMPURITIES G Albareda, X Saura, X Oriols, R Rurali, J Suñé | | |
Threshold switching in MOS structures with HfO2 X Saura, J Suñé, E Miranda, D Jiménez, C Martínez-Domingo, S Long, ... | | |