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Xavier Saura
Xavier Saura
PhD in Electronics Engineering, Universitat Autonoma de Barcelona
Подтвержден адрес электронной почты в домене uab.cat
Название
Процитировано
Процитировано
Год
Initial leakage current related to extrinsic breakdown in HfO 2/Al 2 O 3 nanolaminate ALD dielectrics
C Martínez-Domingo, X Saura, A Conde, D Jiménez, E Miranda, JM Rafí, ...
Microelectronic Engineering 88 (7), 1380-1383, 2011
212011
Threshold switching and conductance quantization in Al/HfO2/Si (p) structures
X Saura, E Miranda, D Jimenez, S Long, M Liu, JM Rafi, F Campabadal, ...
Japanese Journal of Applied Physics 52 (4S), 04CD06, 2013
202013
Modeling the breakdown statistics of Al< inf> 2</inf> O< inf> 3</inf>/HfO< inf> 2</inf> nanolaminates grown by atomic-layer-deposition
A Conde, C Martinez, X Saura, D Jimenez, E Miranda, JM Rafi, ...
Ultimate Integration on Silicon (ULIS), 2011 12th International Conference …, 2011
19*2011
Many-particle transport in the channel of quantum wire double-gate field-effect transistors with charged atomistic impurities
G Albareda, X Saura, X Oriols, J Suné
Journal of Applied Physics 108 (4), 2010
122010
Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics
X Saura, J Suñé, S Monaghan, PK Hurley, E Miranda
Journal of Applied Physics 114 (15), 2013
102013
Failure Analysis of MIM and MIS Structures Using Point-to-Event Distance and Angular Probability Distributions
X Saura, S Monaghan, PK Hurley, J Suñé, E Miranda
Device and Materials Reliability, IEEE Transactions on 14 (4), 1080-1090, 2014
42014
Field-effect control of breakdown paths in HfO2 based MIM structures
X Saura, X Lian, D Jiménez, E Miranda, X Borrisé, F Campabadal, J Suñé
Microelectronics Reliability 53 (9), 1346-1350, 2013
32013
Direct observation of the generation of breakdown spots in MIM structures under constant voltage stress
X Saura, D Moix, J Suñé, PK Hurley, E Miranda
Microelectronics Reliability 53 (9-11), 1257-1260, 2013
32013
Study on the spatial generation of breakdown spots in MIM capacitors with different aspect ratios
X Saura, M Riccio, G De Falco, J Suñé, A Irace, E Miranda
Facta Universitatis, Series: Electronics and Energetics 28 (2), 177-192, 2015
12015
Filamentos conductores de ruptura dieléctrica en aislantes delgados
X Saura, E Miranda, J Suñé
Universitat Autònoma de Barcelona,, 2015
12015
Exploring the field-effect control of breakdown paths in lateral W/HfO2/W structures
X Saura, X Lian, D Jimenez, E Miranda, X Borrisé, X Borrisé, JM Rafí, ...
2013
Threshold switching and conductance quantization in electroformed Al/HfO2/Si (p) structures
J Suñé, E Miranda, D Jiménez, C Martínez-Domingo, X Saura, S Long, ...
Japanese Journal of Applied Physics, 2012
2012
Spin polarized transport in semiconductors–Challenges for...
WDGMIN PRESENCE, G Albareda, X Saura, X Oriols, R Rurali, J Suñé
MONTE CARLO MODELLING OF ELECTRON TRANSPORT IN SI QUANTUM-WIRE DOUBLE-GATE MOSFETs IN PRESENCE OF ATOMISTIC IMPURITIES
G Albareda, X Saura, X Oriols, R Rurali, J Suñé
Threshold switching in MOS structures with HfO2
X Saura, J Suñé, E Miranda, D Jiménez, C Martínez-Domingo, S Long, ...
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Статьи 1–15