| Intrinsic ferroelectricity in Y-doped HfO2 thin films Y Yun, P Buragohain, M Li, Z Ahmadi, Y Zhang, X Li, H Wang, J Li, P Lu, ... Nature Materials 21 (8), 903-909, 2022 | 126 | 2022 |
| Anisotropy-driven spin relaxation in germanium P Li, J Li, L Qing, H Dery, I Appelbaum Physical Review Letters 111 (25), 257204, 2013 | 64 | 2013 |
| Self-Assembled Three-Dimensional Graphene-Based Polyhedrons Inducing Volumetric Light Confinement D Joung, A Nemilentsau, K Agarwal, C Dai, C Liu, Q Su, J Li, T Low, ... Nano Letters 17 (3), 1987-1994, 2017 | 52 | 2017 |
| Field-induced negative differential spin lifetime in silicon J Li, L Qing, H Dery, I Appelbaum Physical Review Letters 108 (15), 157201, 2012 | 46 | 2012 |
| Modeling spin transport in electrostatically-gated lateral-channel silicon devices: Role of interfacial spin relaxation J Li, I Appelbaum Physical Review B 84 (16), 165318, 2011 | 44 | 2011 |
| Contact-Induced Spin Relaxation in Graphene Nonlocal Spin Valves G Stecklein, PA Crowell, J Li, Y Anugrah, Q Su, SJ Koester Physical Review Applied 6 (5), 054015, 2016 | 40 | 2016 |
| Oblique Hanle effect in semiconductor spin transport devices J Li, B Huang, I Appelbaum Applied Physics Letters 92 (14), 142507, 2008 | 39 | 2008 |
| Non-ohmic spin transport in n-type doped silicon HJ Jang, J Xu, J Li, B Huang, I Appelbaum Physical Review B—Condensed Matter and Materials Physics 78 (16), 165329, 2008 | 38 | 2008 |
| Lateral spin transport through bulk silicon J Li, I Appelbaum Applied Physics Letters 100 (16), 162408, 2012 | 31 | 2012 |
| Spin-Polarized Transient Electron Trapping in Phosphorus-Doped Silicon Y Lu, J Li, I Appelbaum Physical Review Letters 106 (21), 217202, 2011 | 22 | 2011 |
| Acetone sensing using graphene quantum capacitance varactors R Ma, Q Su, J Li, SJ Koester 2016 IEEE SENSORS, 1-3, 2016 | 16 | 2016 |
| Spin relaxation via exchange with donor impurity-bound electrons L Qing, J Li, I Appelbaum, H Dery Physical Review B (R) 91 (24), 241405, 2015 | 14 | 2015 |
| Modeling spin transport with current-sensing spin detectors J Li, I Appelbaum Applied Physics Letters 95 (15), 152501, 2009 | 10 | 2009 |
| Comprehensive demonstration of spin Hall Hanle effects in epitaxial Pt thin films J Li, AH Comstock, D Sun, X Xu Physical Review B 106 (18), 184420, 2022 | 7 | 2022 |
| Highly Oriented Organic Ferroelectric Films with Single-Crystal-Level Properties from Restrained Crystallization Y Yuan, Y Ni, X Jiang, Y Yun, J Li, X Xu Crystal Growth & Design 22 (4), 2124-2131, 2022 | 6 | 2022 |
| Microwave Manipulation of Electrically Injected Spin-Polarized Electrons in Silicon CC Lo, J Li, I Appelbaum, JJL Morton Physical Review Applied 1 (1), 014006, 2014 | 3 | 2014 |
| Inelastic spin depolarization spectroscopy in silicon J Li, I Appelbaum Journal of Applied Physics 114 (3), 033705, 2013 | 2 | 2013 |
| Giant interfacial spin Hall angle from Rashba-Edelstein effect revealed by the spin Hall Hanle process J Li, AH Comstock, A McConnell, X Li, Y Yun, D Sun, X Xu Physical Review B 108 (24), L241403, 2023 | | 2023 |
Ian AppelbaumUniversity of Maryland, College ParkПодтвержден адрес электронной почты в домене physics.umd.edu