| Semi-polar III-nitride optoelectronic devices on M-plane substrates with miscuts less than+/-15 degrees in the C-direction PS Hsu, KM Kelchner, RM Farrell, DA Haeger, H Ohta, A Tyagi, ... US Patent 9,077,151, 2015 | 266 | 2015 |
| AlGaN-cladding free green semipolar GaN based laser diode with a lasing wavelength of 506.4 nm A Tyagi, RM Farrell, KM Kelchner, CY Huang, PS Hsu, DA Haeger, ... Applied Physics Express 3 (1), 011002, 2009 | 119 | 2009 |
| Continuous-wave operation of AlGaN-cladding-free nonpolar m-plane InGaN/GaN laser diodes RM Farrell, DF Feezell, MC Schmidt, DA Haeger, KM Kelchner, K Iso, ... Japanese Journal of Applied Physics 46 (8L), L761, 2007 | 105 | 2007 |
| Low-threshold-current-density AlGaN-cladding-free m-plane InGaN/GaN laser diodes RM Farrell, PS Hsu, DA Haeger, K Fujito, SP DenBaars, JS Speck, ... Applied Physics Letters 96 (23), 2010 | 95 | 2010 |
| LED with internally confined current injection area K McGroddy, HH Hu, A Bibl, CKT Chan, DA Haeger US Patent 9,450,147, 2016 | 94 | 2016 |
| Blue-green InGaN/GaN laser diodes on miscut m-plane GaN substrate YD Lin, MT Hardy, PS Hsu, KM Kelchner, CY Huang, DA Haeger, ... Applied physics express 2 (8), 082102, 2009 | 80 | 2009 |
| LED structures for reduced non-radiative sidewall recombination DP Bour, K McGroddy, DA Haeger, JM Perkins, A Chakraborty, JJP Drolet US Patent 9,484,492, 2016 | 77 | 2016 |
| Determination of internal parameters for AlGaN-cladding-free m-plane InGaN/GaN laser diodes RM Farrell, DA Haeger, PS Hsu, K Fujito, DF Feezell, SP DenBaars, ... Applied Physics Letters 99 (17), 2011 | 61 | 2011 |
| Nonpolar AlGaN-cladding-free blue laser diodes with InGaN waveguiding KM Kelchner, YD Lin, MT Hardy, CY Huang, PS Hsu, RM Farrell, ... Applied Physics Express 2 (7), 071003, 2009 | 59 | 2009 |
| Origin of pyramidal hillocks on GaN thin films grown on free-standing m-plane GaN substrates RM Farrell, DA Haeger, X Chen, CS Gallinat, RW Davis, M Cornish, ... Applied Physics Letters 96 (23), 2010 | 57 | 2010 |
| LED structures for reduced non-radiative sidewall recombination DP Bour, K McGroddy, DA Haeger, JM Perkins, A Chakraborty, JJP Drolet, ... US Patent 9,865,772, 2018 | 56 | 2018 |
| LED structures for reduced non-radiative sidewall recombination DP Bour, K McGroddy, DA Haeger, JM Perkins, A Chakraborty, JJP Drolet, ... US Patent 9,601,659, 2017 | 44 | 2017 |
| Semipolar iii-nitride laser diodes with etched mirrors A Tyagi, RM Farrell, CY Huang, PS Hsu, DA Haeger, KM Kelchner, ... US Patent App. 12/908,478, 2011 | 43 | 2011 |
| InGaN/GaN blue laser diode grown on semipolar (3031) free-standing GaN substrates PS Hsu, KM Kelchner, A Tyagi, RM Farrell, DA Haeger, K Fujito, H Ohta, ... Applied physics express 3 (5), 052702, 2010 | 41 | 2010 |
| High-power blue-violet AlGaN-cladding-free m-plane InGaN/GaN laser diodes RM Farrell, DA Haeger, PS Hsu, MC Schmidt, K Fujito, DF Feezell, ... Applied Physics Letters 99 (17), 2011 | 40 | 2011 |
| Effect of carrier gas and substrate misorientation on the structural and optical properties of m-plane InGaN/GaN light-emitting diodes RM Farrell, DA Haeger, X Chen, M Iza, A Hirai, KM Kelchner, K Fujito, ... Journal of crystal growth 313 (1), 1-7, 2010 | 40 | 2010 |
| 384 nm laser diode grown on a (202¯ 1) semipolar relaxed AlGaN buffer layer DA Haeger, EC Young, RB Chung, F Wu, NA Pfaff, M Tsai, K Fujito, ... Applied Physics Letters 100 (16), 2012 | 35 | 2012 |
| LED with internally confined current injection area K McGroddy, HH Hu, A Bibl, CKT Chan, DA Haeger US Patent 10,593,832, 2020 | 30 | 2020 |
| True green semipolar InGaN-based laser diodes beyond critical thickness limits using limited area epitaxy MT Hardy, F Wu, P Shan Hsu, DA Haeger, S Nakamura, JS Speck, ... Journal of Applied Physics 114 (18), 2013 | 29 | 2013 |
| Compositionally graded relaxed AlGaN buffers on semipolar GaN for mid-ultraviolet emission EC Young, F Wu, AE Romanov, DA Haeger, S Nakamura, SP Denbaars, ... Applied Physics Letters 101 (14), 2012 | 23 | 2012 |
Steven DenBaarsProfessor of Materials, University of California Santa BarbaraПодтвержден адрес электронной почты в домене engineering.ucsb.edu