Proton-induced dehydrogenation of defects in AlGaN/GaN HEMTs J Chen, YS Puzyrev, CX Zhang, EX Zhang, MW McCurdy, DM Fleetwood, ...
IEEE Transactions on Nuclear Science 60 (6), 4080-4086, 2013
121 2013 Electron-induced single-event upsets in static random access memory MP King, RA Reed, RA Weller, MH Mendenhall, RD Schrimpf, ...
IEEE Transactions on Nuclear Science 60 (6), 4122-4129, 2013
83 2013 Bias dependence of total ionizing dose effects in SiGe-MOS FinFETs GX Duan, CX Zhang, EX Zhang, J Hachtel, DM Fleetwood, RD Schrimpf, ...
IEEE Transactions on Nuclear Science 61 (6), 2834-2838, 2014
82 2014 Low-energy X-ray and ozone-exposure induced defect formation in graphene materials and devices EX Zhang, AKM Newaz, B Wang, S Bhandaru, CX Zhang, DM Fleetwood, ...
IEEE transactions on nuclear science 58 (6), 2961-2967, 2011
75 2011 Ozone-exposure and annealing effects on graphene-on-SiO2 transistors EX Zhang, AKM Newaz, B Wang, CX Zhang, DM Fleetwood, KI Bolotin, ...
Applied physics letters 101 (12), 2012
60 2012 Origins of low-frequency noise and interface traps in 4H-SiC MOSFETs CX Zhang, EX Zhang, DM Fleetwood, RD Schrimpf, S Dhar, SH Ryu, ...
IEEE Electron Device Letters 34 (1), 117-119, 2012
52 2012 Effects of bias on the irradiation and annealing responses of 4H-SiC MOS devices CX Zhang, EX Zhang, DM Fleetwood, RD Schrimpf, S Dhar, SH Ryu, ...
IEEE Transactions on Nuclear Science 58 (6), 2925-2929, 2011
52 2011 Atomic-scale origins of bias-temperature instabilities in SiC–SiO2 structures X Shen, EX Zhang, CX Zhang, DM Fleetwood, RD Schrimpf, S Dhar, ...
Applied Physics Letters 98 (6), 2011
47 2011 Bias-temperature instabilities in 4H-SiC metal–oxide–semiconductor capacitors EX Zhang, CX Zhang, DM Fleetwood, RD Schrimpf, S Dhar, SH Ryu, ...
IEEE Transactions on Device and Materials Reliability 12 (2), 391-398, 2012
44 2012 Temperature Dependence and Postirradiation Annealing Response of the CX Zhang, X Shen, EX Zhang, DM Fleetwood, RD Schrimpf, SA Francis, ...
IEEE transactions on electron devices 60 (7), 2361-2367, 2013
42 2013 Total ionizing dose effects on hBN encapsulated graphene devices CX Zhang, B Wang, GX Duan, EX Zhang, DM Fleetwood, ML Alles, ...
IEEE Transactions on Nuclear Science 61 (6), 2868-2873, 2014
37 2014 RF performance of proton-irradiated AlGaN/GaN HEMTs J Chen, EX Zhang, CX Zhang, MW McCurdy, DM Fleetwood, RD Schrimpf, ...
IEEE Transactions on Nuclear Science 61 (6), 2959-2964, 2014
35 2014 Charge trapping properties of 3C-and 4H-SiC MOS capacitors with nitrided gate oxides R Arora, J Rozen, DM Fleetwood, KF Galloway, CX Zhang, J Han, ...
Ieee transactions on nuclear science 56 (6), 3185-3191, 2009
34 2009 Electrical Stress and Total Ionizing Dose Effects on CX Zhang, AKM Newaz, B Wang, EX Zhang, GX Duan, DM Fleetwood, ...
IEEE Transactions on Nuclear Science 61 (6), 2862-2867, 2014
30 2014 Single-event transient and total dose response of precision voltage reference circuits designed in a 90-nm SiGe BiCMOS technology AS Cardoso, PS Chakraborty, N Karaulac, DM Fleischhauer, ...
IEEE transactions on Nuclear Science 61 (6), 3210-3217, 2014
26 2014 Electrical stress and total ionizing dose effects on graphene-based non-volatile memory devices CX Zhang, EX Zhang, DM Fleetwood, ML Alles, RD Schrimpf, EB Song, ...
IEEE Transactions on Nuclear Science 59 (6), 2974-2978, 2012
25 2012 Effects of Negative-Bias-Temperature-Instability on Low-Frequency Noise in SiGe GX Duan, JA Hachtel, EX Zhang, CX Zhang, DM Fleetwood, RD Schrimpf, ...
IEEE Transactions on Device and Materials Reliability 16 (4), 541-548, 2016
23 2016 Effect of Ionizing Radiation on Defects and CX Zhang, SA Francis, EX Zhang, DM Fleetwood, RD Schrimpf, ...
IEEE Transactions on Nuclear Science 58 (3), 764-769, 2011
22 2011 Surface reactions and defect formation in irradiated graphene devices YS Puzyrev, B Wang, EX Zhang, CX Zhang, AKM Newaz, KI Bolotin, ...
IEEE Transactions on Nuclear Science 59 (6), 3039-3044, 2012
18 2012 Charge pumping measurements of radiation-induced interface-trap density in floating-body SOI FinFETs EX Zhang, DM Fleetwood, GX Duan, CX Zhang, SA Francis, RD Schrimpf
IEEE Transactions on Nuclear Science 59 (6), 3062-3068, 2012
17 2012