| The 2018 GaN power electronics roadmap H Amano, Y Baines, E Beam, M Borga, T Bouchet, PR Chalker, M Charles, ... Journal of Physics D: Applied Physics 51 (16), 163001, 2018 | 1195 | 2018 |
| On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p-doped quantum well barriers J Xie, X Ni, Q Fan, R Shimada, Ü Özgür, H Morkoç Applied Physics Letters 93 (12), 2008 | 445 | 2008 |
| Progress on n‐type doping of AlGaN alloys on AlN single crystal substrates for UV optoelectronic applications R Collazo, S Mita, J Xie, A Rice, J Tweedie, R Dalmau, Z Sitar physica status solidi c 8 (7‐8), 2031-2033, 2011 | 214 | 2011 |
| On the origin of the 265 nm absorption band in AlN bulk crystals R Collazo, J Xie, BE Gaddy, Z Bryan, R Kirste, M Hoffmann, R Dalmau, ... Applied Physics Letters 100 (19), 2012 | 194 | 2012 |
| Gallium nitride on high thermal conductivity material device and method X Gu, J Xie, EA Beam III, DC Dumka, CC Lee US Patent 9,337,278, 2016 | 192 | 2016 |
| Photoresponse of n-ZnO∕ p-SiC heterojunction diodes grown by plasma-assisted molecular-beam epitaxy YI Alivov, Ü Özgür, S Doğan, D Johnstone, V Avrutin, N Onojima, C Liu, ... Applied Physics Letters 86 (24), 2005 | 187 | 2005 |
| Growth and characterization of AlN and AlGaN epitaxial films on AlN single crystal substrates R Dalmau, B Moody, R Schlesser, S Mita, J Xie, M Feneberg, B Neuschl, ... Journal of The Electrochemical Society 158 (5), H530, 2011 | 177 | 2011 |
| High internal quantum efficiency in AlGaN multiple quantum wells grown on bulk AlN substrates Z Bryan, I Bryan, J Xie, S Mita, Z Sitar, R Collazo Applied Physics Letters 106 (14), 2015 | 171 | 2015 |
| Surface preparation and homoepitaxial deposition of AlN on (0001)-oriented AlN substrates by metalorganic chemical vapor deposition A Rice, R Collazo, J Tweedie, R Dalmau, S Mita, J Xie, Z Sitar Journal of Applied Physics 108 (4), 2010 | 162 | 2010 |
| High electron mobility in nearly lattice-matched AlInN∕ AlN∕ GaN heterostructure field effect transistors J Xie, X Ni, M Wu, JH Leach, Ü Özgür, H Morkoç Applied Physics Letters 91 (13), 2007 | 162 | 2007 |
| Deep-ultraviolet light-emitting diodes fabricated on AlN substrates prepared by hydride vapor phase epitaxy T Kinoshita, K Hironaka, T Obata, T Nagashima, R Dalmau, R Schlesser, ... Applied Physics Express 5 (12), 122101, 2012 | 155 | 2012 |
| Preparation of a freestanding AlN substrate from a thick AlN layer grown by hydride vapor phase epitaxy on a bulk AlN substrate prepared by physical vapor transport Y Kumagai, Y Kubota, T Nagashima, T Kinoshita, R Dalmau, R Schlesser, ... Applied Physics Express 5 (5), 055504, 2012 | 155 | 2012 |
| Lasing and longitudinal cavity modes in photo-pumped deep ultraviolet AlGaN heterostructures J Xie, S Mita, Z Bryan, W Guo, L Hussey, B Moody, R Schlesser, R Kirste, ... Applied Physics Letters 102 (17), 2013 | 135 | 2013 |
| Cavity polaritons in ZnO-based hybrid microcavities R Shimada, J Xie, V Avrutin, U Ozgur, H Morkoç Applied Physics Letters 92 (1), 011127-011127-3, 2008 | 129 | 2008 |
| Vacancy compensation and related donor-acceptor pair recombination in bulk AlN BE Gaddy, Z Bryan, I Bryan, R Kirste, J Xie, R Dalmau, B Moody, ... Applied Physics Letters 103 (16), 2013 | 111 | 2013 |
| Inhibition of atherogenesis in LDLR knockout mice by systemic delivery of adeno-associated virus type 2-hIL-10 Y Liu, D Li, J Chen, J Xie, S Bandyopadhyay, D Zhang, ... Atherosclerosis 188 (1), 19-27, 2006 | 111 | 2006 |
| High voltage, high current GaN-on-GaN pn diodes with partially compensated edge termination J Wang, L Cao, J Xie, E Beam, R McCarthy, C Youtsey, P Fay Applied Physics Letters 113 (2), 2018 | 109 | 2018 |
| The role of the carbon-silicon complex in eliminating deep ultraviolet absorption in AlN BE Gaddy, Z Bryan, I Bryan, J Xie, R Dalmau, B Moody, Y Kumagai, ... Applied Physics Letters 104 (20), 2014 | 92 | 2014 |
| Comparative study of etching high crystalline quality AlN and GaN W Guo, J Xie, C Akouala, S Mita, A Rice, J Tweedie, I Bryan, R Collazo, ... Journal of Crystal Growth 366, 20-25, 2013 | 89 | 2013 |
| The effect of AlN interlayer thicknesses on scattering processes in lattice-matched AlInN/GaN two-dimensional electron gas heterostructures A Teke, S Gökden, R Tülek, JH Leach, Q Fan, J Xie, Ü Özgür, H Morkoç, ... New Journal of Physics 11 (6), 063031, 2009 | 89 | 2009 |
