SixSnyGe1-xy and related alloy heterostructures based on Si, Ge and Sn J Kouvetakis, M Bauer, J Tolle
US Patent 7,598,513, 2009
508 2009 Hybrid Group IV/III-V Semiconductor Structures J Kouvetakis, J Menendez
US Patent App. 13/062,304, 2011
501 2011 GeSn alloys and ordered phases with direct tunable bandgaps grown directly on silicon J Kouvetakis, M Bauer, J Menendez, CW Hu, IST Tsong, J Tolle
US Patent 7,589,003, 2009
495 2009 Method for preparing ge1-x-ysnxey (e= p, as, sb) semiconductors and related si-ge-sn-e and si-ge-e analogs J Kouvetakis, M Bauer, J Tolle, C Cook
US Patent 7,238,596, 2007
487 2007 Optical critical points of thin-film VR D’costa, CS Cook, AG Birdwell, CL Littler, M Canonico, S Zollner, ...
Physical Review B—Condensed Matter and Materials Physics 73 (12), 125207, 2006
447 2006 Materials and optical devices based on group IV quantum wells grown on Si-Ge-Sn buffered silicon J Kouvetakis, J Menendez, J Tolle, L Liao, D Samara-Rubio
US Patent 7,582,891, 2009
373 2009 Boron-carbon-nitrogen materials of graphite-like structure RB Kaner, J Kouvetakis, CE Warble, ML Sattler, N Bartlett
Materials research bulletin 22 (3), 399-404, 1987
362 1987 Ge–Sn semiconductors for band-gap and lattice engineering M Bauer, J Taraci, J Tolle, AVG Chizmeshya, S Zollner, DJ Smith, ...
Applied physics letters 81 (16), 2992-2994, 2002
341 2002 Tin-based group IV semiconductors: New platforms for opto-and microelectronics on silicon J Kouvetakis, J Menendez, AVG Chizmeshya
Annu. Rev. Mater. Res. 36 (1), 497-554, 2006
331 2006 Novel aspects of graphite intercalation by fluorine and fluorides and new B/C, C/N and B/C/N materials based on the graphite network J Kouvetakis, T Sasaki, C Shen, R Hagiwara, M Lerner, KM Krishnan, ...
Synthetic metals 34 (1-3), 1-7, 1989
299 1989 Novel synthetic routes to carbon-nitrogen thin films J Kouvetakis, M Todd, B Wilkens, A Bandari, N Cave
Chemistry of materials 6 (6), 811-814, 1994
298 1994 Direct-gap photoluminescence with tunable emission wavelength in Ge1− ySny alloys on silicon J Mathews, RT Beeler, J Tolle, C Xu, R Roucka, J Kouvetakis, ...
Applied physics letters 97 (22), 2010
236 2010 Extended performance GeSn/Si (100) pin photodetectors for full spectral range telecommunication applications J Mathews, R Roucka, J Xie, SQ Yu, J Menéndez, J Kouvetakis
Applied physics letters 95 (13), 2009
232 2009 Type-I J Menendez, J Kouvetakis
Applied physics letters 85 (7), 1175-1177, 2004
231 2004 A novel graphite-like material of composition BC 3, and nitrogen–carbon graphites J Kouvetakis, RB Kaner, ML Sattler, N Bartlett
Journal of the Chemical Society, Chemical Communications, 1758-1759, 1986
185 1986 Perfectly tetragonal, tensile-strained Ge on Ge1− ySny buffered Si (100) YY Fang, J Tolle, R Roucka, AVG Chizmeshya, J Kouvetakis, VR D’Costa, ...
Applied physics letters 90 (6), 2007
159 2007 Tunable optical gap at a fixed lattice constant in group-IV semiconductor alloys VR D’Costa, YY Fang, J Tolle, J Kouvetakis, J Menendez
Physical Review Letters 102 (10), 107403, 2009
158 2009 Synthesis of ternary SiGeSn semiconductors on Si(100) via M Bauer, C Ritter, PA Crozier, J Ren, J Menendez, G Wolf, J Kouvetakis
Applied physics letters 83 (11), 2163-2165, 2003
148 2003 Raman scattering in Ge1− ySny alloys VR D’costa, J Tolle, R Roucka, CD Poweleit, J Kouvetakis, J Menendez
Solid State Communications 144 (5-6), 240-244, 2007
138 2007 Next generation of Ge1− ySny (y= 0.01-0.09) alloys grown on Si (100) via Ge3H8 and SnD4: Reaction kinetics and tunable emission G Grzybowski, RT Beeler, L Jiang, DJ Smith, J Kouvetakis, J Menendez
Applied physics letters 101 (7), 2012
135 2012 