Terahertz oscillations in an In0. 53Ga0. 47As submicron planar Gunn diode A Khalid, GM Dunn, RF Macpherson, S Thoms, D Macintyre, C Li, ...
Journal of Applied Physics 115 (11), 2014
88 2014 Circumventing UV Light Induced Nanomorphology Disorder to Achieve Long Lifetime PTB7‐Th: PCBM Based Solar Cells Q Liu, J Toudert, F Liu, P Mantilla‐Perez, MM Bajo, TP Russell, J Martorell
Advanced Energy Materials 7 (21), 1701201, 2017
87 2017 On the link between electroluminescence, gate current leakage, and surface defects in AlGaN/GaN high electron mobility transistors upon off-state stress M Montes Bajo, C Hodges, MJ Uren, M Kuball
Applied Physics Letters 101 (3), 2012
79 2012 Thermal Properties of AlGaN/GaN HFETs on Bulk GaN Substrates N Killat, M Montes, JW Pomeroy, T Paskova, KR Evans, J Leach, X Li, ...
Electron Device Letters, IEEE 33 (3), 366-368, 2012
79 2012 In0.53Ga0.47As Planar Gunn Diodes Operating at a Fundamental Frequency of 164 GHz A Khalid, C Li, V Papageogiou, GM Dunn, MJ Steer, IG Thayne, M Kuball, ...
IEEE Electron Device Letters 34 (1), 39-41, 2013
68 * 2013 Homoepitaxy of non-polar ZnO/(Zn,Mg)O multi-quantum wells: From a precise growth control to the observation of intersubband transitions NL Biavan, M Hugues, MM Bajo, J Tamayo-Arriola, A Jollivet, D Lefebvre, ...
Applied Physics Letters 111, 231903, 2017
40 2017 Improving the performance of a neodymium aluminium borate microchip laser crystal by resonant pumping ZD Luo, YD Huang, M Montes, D Jaque
Applied physics letters 85 (5), 715-717, 2004
33 2004 Thermal hysteresis in the luminescence of MO Ramirez, D Jaque, M Montes, J Garcıa Solé, LE Bausá, L Ivleva
Applied physics letters 84 (15), 2787-2789, 2004
32 2004 An extremely thin and robust interconnecting layer providing 76% fill factor in a tandem polymer solar cell architecture A Martínez-Otero, Q Liu, P Mantilla-Perez, MM Bajo, J Martorell
Journal of Materials Chemistry A 3 (20), 10681-10686, 2015
31 2015 Short infrared wavelength quantum cascade detectors based on m-plane ZnO/ZnMgO quantum wells A Jollivet, B Hinkov, S Pirotta, H Hoang, S Derelle, J Jaeck, ...
Applied Physics Letters 113 (25), 2018
30 2018 Time evolution of off-state degradation of AlGaN/GaN high electron mobility transistors MM Bajo, H Sun, MJ Uren, M Kuball
Applied Physics Letters 104 (22), 2014
30 2014 Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges N Killat, M Montes Bajo, T Paskova, KR Evans, J Leach, X Li, Ü Özgür, ...
Applied Physics Letters 103 (19), 2013
29 2013 Independent tuning of electron and hole confinement in InAs/GaAs quantum dots through a thin GaAsSbN capping layer JM Ulloa, DF Reyes, M Montes, K Yamamoto, DL Sales, D Gonzalez, ...
Applied Physics Letters 100 (1), 2012
28 2012 Short-pulse generation from a resonantly pumped NdAl3 (BO3 )4 microchip laser M Montes, D Jaque, L Zundu, H Yidong
Optics letters 30 (4), 397-399, 2005
28 2005 Terahertz intersubband electroluminescence from nonpolar m-plane ZnO quantum cascade structures B Meng, B Hinkov, NML Biavan, HT Hoang, D Lefebvre, M Hugues, ...
ACS photonics 8 (1), 343-349, 2020
27 2020 Rock-salt CdZnO as a transparent conductive oxide J Tamayo-Arriola, A Huerta-Barberà, M Montes Bajo, E Muñoz, ...
Applied Physics Letters 113 (22), 2018
24 2018 Multisubband Plasmons in Doped M Montes Bajo, J Tamayo-Arriola, M Hugues, JM Ulloa, N Le Biavan, ...
Physical Review Applied 10 (2), 024005, 2018
23 2018 Passive Q-switching of a diode pumped Nd3+: CGGG crystal: Benefits of inhomogeneous line broadening and short pulse generation M Montes, C de las Heras, D Jaque
Optical Materials 28 (4), 408-414, 2006
23 2006 Optical phase transition in semiconductor quantum metamaterials A Hierro, M Montes Bajo, M Ferraro, J Tamayo-Arriola, N Le Biavan, ...
Physical Review Letters 123 (11), 117401, 2019
20 2019 Reduction of impact ionization in GaAs-based planar Gunn diodes by anode contact design M Montes, G Dunn, A Stephen, A Khalid, C Li, D Cumming, CH Oxley, ...
IEEE transactions on electron devices 59 (3), 654-660, 2011
20 2011 