205-GHz (Al, In) N/GaN HEMTs H Sun, AR Alt, H Benedickter, E Feltin, JF Carlin, M Gonschorek, ...
IEEE electron device letters 31 (9), 957-959, 2010
215 2010 102-GHz AlInN/GaN HEMTs on silicon with 2.5-W/mm output power at 10 GHz H Sun, AR Alt, H Benedickter, CR Bolognesi, E Feltin, JFÇ Carlin, ...
IEEE electron device letters 30 (8), 796-798, 2009
99 2009 Fully Passivated AlInN/GaN HEMTs With S Tirelli, D Marti, H Sun, AR Alt, JF Carlin, N Grandjean, CR Bolognesi
IEEE electron device letters 32 (10), 1364-1366, 2011
94 2011 High-Performance 0.1- H Sun, AR Alt, H Benedickter, CR Bolognesi
IEEE Electron Device Letters 30 (2), 107-109, 2008
68 2008 107-GHz (Al, Ga) N/GaN HEMTs on silicon with improved maximum oscillation frequencies S Tirelli, D Marti, H Sun, AR Alt, H Benedickter, EL Piner, CR Bolognesi
IEEE Electron Device Letters 31 (4), 296-298, 2010
66 2010 100-nm-gate (Al, In) N/GaN HEMTs grown on SiC with FT= 144 GHz HF Sun, AR Alt, H Benedickter, E Feltin, JF Carlin, M Gonschorek, ...
IEEE electron device letters 31 (4), 293-295, 2010
64 2010 Ultrahigh-speed AlInN/GaN high electron mobility transistors grown on (111) high-resistivity silicon with FT= 143 GHz H Sun, AR Alt, H Benedickter, CR Bolognesi, E Feltin, JF Carlin, ...
Applied physics express 3 (9), 094101, 2010
63 2010 III-Nitride High Electron Mobility Transistor Structures and Methods for Fabrication of Same L Yuan, PGQ Lo, H Sun, KB Lee, W Wang, SL Selvaraj
US Patent App. 14/389,043, 2015
57 2015 Anomalous behavior of AlGaN∕ GaN heterostructure field-effect transistors at cryogenic temperatures: From current collapse to current enhancement with cooling HF Sun, CR Bolognesi
Applied physics letters 90 (12), 2007
46 2007 Genome characteristics and evolution of pseudorabies virus strains in Eastern China from 2017 to 2019 X Zhai, W Zhao, K Li, C Zhang, C Wang, S Su, J Zhou, J Lei, G Xing, ...
Virologica Sinica 34, 601-609, 2019
42 2019 100 nm gate AlGaN/GaN HEMTs on silicon with fT= 90 GHz HF Sun, AR Alt, H Benedickter, CR Bolognesi
Electronics letters 45 (7), 376-377, 2009
33 2009 Comparative pathogenicity and immunogenicity of triple and double gene-deletion pseudorabies virus vaccine candidates J Dong, J Bai, T Sun, Z Gu, J Wang, H Sun, P Jiang
Research in veterinary science 115, 17-23, 2017
32 2017 Nanometric AlGaN/GaN HEMT performance with implant or mesa isolation H Sun, AR Alt, S Tirelli, D Marti, H Benedickter, E Piner, CR Bolognesi
IEEE electron device letters 32 (8), 1056-1058, 2011
30 2011 Ozone passivation of slow transient current collapse in AlGaN∕ GaN field-effect transistors: The role of threading dislocations and the passivation mechanism DW DiSanto, HF Sun, CR Bolognesi
Applied physics letters 88 (1), 2006
28 2006 Identification of linear B cell epitope on gB, gC, and gE proteins of porcine pseudorabies virus using monoclonal antibodies P Zhang, L Lv, H Sun, S Li, H Fan, X Wang, J Bai, P Jiang
Veterinary microbiology 234, 83-91, 2019
23 2019 Low-Noise Microwave Performance of 0.1 H Sun, AR Alt, H Benedickter, E Feltin, JF Carlin, M Gonschorek, ...
IEEE microwave and wireless components letters 20 (8), 453-455, 2010
20 2010 Submicrometer copper T-gate AlGaN/GaN HFETs: the gate metal stack effect HF Sun, AR Alt, CR Bolognesi
IEEE electron device letters 28 (5), 350-353, 2007
17 2007 Polymorphisms affecting the gE and gI proteins partly contribute to the virulence of a newly-emergent highly virulent Chinese pseudorabies virus J Dong, Z Gu, L Jin, L Lv, J Wang, T Sun, J Bai, H Sun, X Wang, P Jiang
Virology 519, 42-52, 2018
15 2018 全耗尽 CMOS/SOI 工艺 刘新宇， 孙海峰， 刘洪民， 陈焕章， 扈焕章， 海潮和， 和致经， 吴德馨
半导体学报: 英文版 24 (1), 104-108, 2003
13 2003 High‐speed and low‐noise AlInN/GaN HEMTs on SiC H Sun, AR Alt, H Benedickter, E Feltin, JF Carlin, M Gonschorek, ...
physica status solidi (a) 208 (2), 429-433, 2011
10 2011 
Prof. Dr. Colombo BolognesiETH Zurich, Chair, Millimeter-Wave ElectronicsПодтвержден адрес электронной почты в домене mwe.ee.ethz.ch