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Srabanti Chowdhury
Srabanti Chowdhury
Stanford University
Подтвержден адрес электронной почты в домене stanford.edu - Главная страница
Название
Процитировано
Процитировано
Год
Ultrawide‐bandgap semiconductors: research opportunities and challenges
JY Tsao, S Chowdhury, MA Hollis, D Jena, NM Johnson, KA Jones, ...
Advanced Electronic Materials 4 (1), 1600501, 2018
14602018
Power GaN devices: Materials, applications and reliability
M Meneghini, G Meneghesso, E Zanoni
Springer., 2017
2472017
Lateral and vertical transistors using the AlGaN/GaN heterostructure
S Chowdhury, UK Mishra
IEEE Transactions on Electron Devices 60 (10), 3060-3066, 2013
2212013
Enhancement and depletion mode AlGaN/GaN CAVET with Mg-ion-implanted GaN as current blocking layer
S Chowdhury, BL Swenson, UK Mishra
IEEE Electron Device Letters 29 (6), 543-545, 2008
2182008
CAVET on bulk GaN substrates achieved with MBE-regrown AlGaN/GaN layers to suppress dispersion
S Chowdhury, MH Wong, BL Swenson, UK Mishra
IEEE Electron Device Letters 33 (1), 41-43, 2011
2052011
Current status and scope of gallium nitride-based vertical transistors for high-power electronics application
S Chowdhury, BL Swenson, MH Wong, UK Mishra
Semiconductor Science and Technology 28 (7), 074014, 2013
2042013
Design, fabrication, and performance analysis of GaN vertical electron transistors with a buried p/n junction
R Yeluri, J Lu, CA Hurni, DA Browne, S Chowdhury, S Keller, JS Speck, ...
Applied Physics Letters 106 (18), 2015
1152015
Normally OFF trench CAVET with active Mg-doped GaN as current blocking layer
D Ji, MA Laurent, A Agarwal, W Li, S Mandal, S Keller, S Chowdhury
IEEE Transactions on Electron Devices 64 (3), 805-808, 2016
1072016
Design of 1.2 kV Power Switches With LowUsing GaN-Based Vertical JFET
D Ji, S Chowdhury
IEEE Transactions on Electron Devices 62 (8), 2571-2578, 2015
1002015
Distribution of donor states on etched surface of AlGaN/GaN heterostructures
M Higashiwaki, S Chowdhury, MS Miao, BL Swenson, CG Van de Walle, ...
Journal of Applied Physics 108 (6), 2010
992010
880 V/MIS Gate Trench CAVET on Bulk GaN Substrates
D Ji, A Agarwal, H Li, W Li, S Keller, S Chowdhury
IEEE Electron Device Letters 39 (6), 863-865, 2018
952018
Distributed surface donor states and the two-dimensional electron gas at AlGaN/GaN heterojunctions
L Gordon, MS Miao, S Chowdhury, M Higashiwaki, UK Mishra, ...
Journal of Physics D: Applied Physics 43 (50), 505501, 2010
952010
Effects of oxidation on surface chemical states and barrier height of AlGaN/GaN heterostructures
M Higashiwaki, S Chowdhury, BL Swenson, UK Mishra
Applied Physics Letters 97 (22), 2010
952010
Record-low thermal boundary resistance between diamond and GaN-on-SiC for enabling radiofrequency device cooling
M Malakoutian, DE Field, NJ Hines, S Pasayat, S Graham, M Kuball, ...
ACS Applied Materials & Interfaces 13 (50), 60553-60560, 2021
862021
Semiconductor devices with guard rings
U Mishra, S Chowdhury, Y Dora
US Patent 8,901,604, 2014
852014
High power semiconductor electronic components with increased reliability
RK Lal, R Coffie, Y Wu, P Parikh, Y Dora, U Mishra, S Chowdhury, ...
US Patent 8,598,937, 2013
822013
Wide bandgap semiconductor power devices: materials, physics, design, and applications
BJ Baliga
Woodhead Publishing, 2018
812018
Demonstrating> 1.4 kV OG-FET performance with a novel double field-plated geometry and the successful scaling of large-area devices
D Ji, C Gupta, SH Chan, A Agarwal, W Li, S Keller, UK Mishra, ...
2017 IEEE International Electron Devices Meeting (IEDM), 9.4. 1-9.4. 4, 2017
742017
Experimental determination of impact ionization coefficients of electrons and holes in gallium nitride using homojunction structures
D Ji, B Ercan, S Chowdhury
Applied Physics Letters 115 (7), 2019
732019
Large-Area In-Situ Oxide, GaN Interlayer-Based Vertical Trench MOSFET (OG-FET)
D Ji, C Gupta, A Agarwal, SH Chan, C Lund, W Li, S Keller, UK Mishra, ...
IEEE Electron Device Letters 39 (5), 711-714, 2018
722018
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