| Ge doping of β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy E Ahmadi, OS Koksaldi, SW Kaun, Y Oshima, DB Short, UK Mishra, ... Applied Physics Express 10 (4), 041102, 2017 | 304 | 2017 |
| β-(AlxGa1− x) 2O3/Ga2O3 (010) heterostructures grown on β-Ga2O3 (010) substrates by plasma-assisted molecular beam epitaxy SW Kaun, F Wu, JS Speck Journal of Vacuum Science & Technology A 33 (4), 2015 | 200 | 2015 |
| High-electron-mobility GaN grown on free-standing GaN templates by ammonia-based molecular beam epitaxy ECH Kyle, SW Kaun, PG Burke, F Wu, YR Wu, JS Speck Journal of applied physics 115 (19), 2014 | 140 | 2014 |
| Spatially-resolved spectroscopic measurements of Ec− 0.57 eV traps in AlGaN/GaN high electron mobility transistors DW Cardwell, A Sasikumar, AR Arehart, SW Kaun, J Lu, S Keller, ... Applied Physics Letters 102 (19), 2013 | 125 | 2013 |
| Proton-Induced Dehydrogenation of Defects in AlGaN/GaN HEMTs J Chen, YS Puzyrev, CX Zhang, EX Zhang, MW McCurdy, DM Fleetwood, ... IEEE Transactions on Nuclear Science 60 (6), 4080-4086, 2013 | 124 | 2013 |
| Chlorine-based dry etching of β-Ga2O3 JE Hogan, SW Kaun, E Ahmadi, Y Oshima, JS Speck Semiconductor Science and Technology 31 (6), 065006, 2016 | 121 | 2016 |
| Influence of threading dislocation density on early degradation in AlGaN/GaN high electron mobility transistors M Ťapajna, SW Kaun, MH Wong, F Gao, T Palacios, UK Mishra, JS Speck, ... Applied Physics Letters 99 (22), 2011 | 111 | 2011 |
| Molecular beam epitaxy for high-performance Ga-face GaN electron devices SW Kaun, MH Wong, UK Mishra, JS Speck Semiconductor science and technology 28 (7), 074001, 2013 | 101 | 2013 |
| Role of oxygen in the OFF-state degradation of AlGaN/GaN high electron mobility transistors F Gao, B Lu, L Li, S Kaun, JS Speck, C Thompson, T Palacios Applied Physics Letters 99 (22), 2011 | 98 | 2011 |
| Effect of dislocations on electron mobility in AlGaN/GaN and AlGaN/AlN/GaN heterostructures SW Kaun, PG Burke, M Hoi Wong, ECH Kyle, UK Mishra, JS Speck Applied Physics Letters 101 (26), 2012 | 94 | 2012 |
| Effects of threading dislocation density on the gate leakage of AlGaN/GaN heterostructures for high electron mobility transistors SW Kaun, MH Wong, S Dasgupta, S Choi, R Chung, UK Mishra, JS Speck Applied physics express 4 (2), 024101, 2011 | 94 | 2011 |
| Atom probe analysis of AlN interlayers in AlGaN/AlN/GaN heterostructures B Mazumder, SW Kaun, J Lu, S Keller, UK Mishra, JS Speck Applied Physics Letters 102 (11), 2013 | 82 | 2013 |
| Growth and etching characteristics of (001) β-Ga2O3 by plasma-assisted molecular beam epitaxy Y Oshima, E Ahmadi, S Kaun, F Wu, JS Speck Semiconductor Science and Technology 33 (1), 015013, 2017 | 70 | 2017 |
| Multiple defects cause degradation after high field stress in AlGaN/GaN HEMTs R Jiang, X Shen, J Fang, P Wang, EX Zhang, J Chen, DM Fleetwood, ... IEEE Transactions on Device and Materials Reliability 18 (3), 364-376, 2018 | 65 | 2018 |
| GaN-based high-electron-mobility transistor structures with homogeneous lattice-matched InAlN barriers grown by plasma-assisted molecular beam epitaxy SW Kaun, E Ahmadi, B Mazumder, F Wu, ECH Kyle, PG Burke, UK Mishra, ... Semiconductor Science and Technology 29 (4), 045011, 2014 | 63 | 2014 |
| Worst-case bias for proton and 10-keV X-ray irradiation of AlGaN/GaN HEMTs R Jiang, EX Zhang, MW McCurdy, J Chen, X Shen, P Wang, ... IEEE Transactions on Nuclear Science 64 (1), 218-225, 2016 | 62 | 2016 |
| Increased p-type conductivity through use of an indium surfactant in the growth of Mg-doped GaN ECH Kyle, SW Kaun, EC Young, JS Speck Applied Physics Letters 106 (22), 2015 | 49 | 2015 |
| Correlation between threading dislocation density and sheet resistance of AlGaN/AlN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy SW Kaun, MH Wong, UK Mishra, JS Speck Applied Physics Letters 100 (26), 2012 | 48 | 2012 |
| Pure AlN layers in metal-polar AlGaN/AlN/GaN and AlN/GaN heterostructures grown by low-temperature ammonia-based molecular beam epitaxy SW Kaun, B Mazumder, MN Fireman, ECH Kyle, UK Mishra, JS Speck Semiconductor Science and Technology 30 (5), 055010, 2015 | 43 | 2015 |
| Optical investigation of degradation mechanisms in AlGaN/GaN high electron mobility transistors: Generation of non-radiative recombination centers C Hodges, N Killat, SW Kaun, MH Wong, F Gao, T Palacios, UK Mishra, ... Applied Physics Letters 100 (11), 2012 | 41 | 2012 |
Jim SpeckProfessor of Materials, UCSBПодтвержден адрес электронной почты в домене ucsb.edu
