Standards for the characterization of endurance in resistive switching devices M Lanza, R Waser, D Ielmini, JJ Yang, L Goux, J Suñe, AJ Kenyon, ...
ACS nano 15 (11), 17214-17231, 2021
180 2021 Admittance spectroscopy in junctions J Barbolla, S Duenas, L Bailón
Solid-state electronics 35 (3), 285-297, 1992
102 1992 A comparative study of the electrical properties of TiO2 films grown by high-pressure reactive sputtering and atomic layer deposition S Duenas, H Castán, H García, E San Andrés, M Toledano-Luque, I Mártil, ...
Semiconductor science and technology 20 (10), 1044, 2005
99 2005 Thin film capacitors and process for making them S Duenas, RR Kola, HY Kumagai, MY Lau, PA Sullivan, KL Tai
US Patent 6,075,691, 2000
79 2000 Influence of single and double deposition temperatures on the interface quality of atomic layer deposited Al2O3 dielectric thin films on silicon S Dueñas, H Castán, H García, A De Castro, L Bailón, K Kukli, A Aidla, ...
Journal of applied physics 99 (5), 2006
66 2006 Electrical characteristics of metal-insulator-semiconductor structures with atomic layer deposited Al2O3, HfO2, and nanolaminates on different silicon substrates F Campabadal, JM Rafí, M Zabala, O Beldarrain, A Faigón, H Castán, ...
Journal of Vacuum Science & Technology B 29 (1), 2011
64 2011 Deposition of SiNx: H thin films by the electron cyclotron resonance and its application to Al/SiNx: H/Si structures S Garcia, I Martil, G Gonzalez Diaz, E Castan, S Duenas, M Fernandez
Journal of Applied Physics 83 (1), 332-338, 1998
64 1998 Experimental observation of conductance transients in S Dueñas, R Peláez, E Castan, R Pinacho, L Quintanilla, J Barbolla, ...
Applied physics letters 71 (6), 826-828, 1997
56 1997 Electrical properties of atomic-layer-deposited thin gadolinium oxide high-k gate dielectrics S Dueñas, H Castán, H Garcia, A Gómez, L Bailón, K Kukli, T Hatanpää, ...
Journal of The Electrochemical Society 154 (10), G207, 2007
46 2007 Experimental verification of intermediate band formation on titanium-implanted silicon H Castán, E Pérez, H García, S Dueñas, L Bailón, J Olea, D Pastor, ...
Journal of Applied Physics 113 (2), 2013
41 2013 The electrical-interface quality of as-grown atomic-layer-deposited disordered HfO2 on p-and n-type silicon S Duenas, H Castán, H Garcia, J Barbolla, K Kukli, J Aarik, A Aidla
Semiconductor science and technology 19 (9), 1141, 2004
40 2004 Interface quality study of ECR-deposited and rapid thermal annealed silicon nitride Al/SiNx: H/InP and Al/SiNx: H/In0. 53Ga0. 47As structures by DLTS and conductance transient … H Castán, S Dueñas, J Barbolla, E Redondo, N Blanco, I Mártil, ...
Microelectronics Reliability 40 (4-5), 845-848, 2000
40 2000 A physically based model for resistive memories including a detailed temperature and variability description G González-Cordero, MB González, H García, F Campabadal, S Dueñas, ...
Microelectronic Engineering 178, 26-29, 2017
38 2017 Programming Pulse Width Assessment for Reliable and Low-Energy Endurance Performance in Al:HfO2 -Based RRAM Arrays E Pérez, Ó González Ossorio, S Dueñas, H Castán, H García, C Wenger
Electronics 9 (5), 864, 2020
36 2020 Optical admittance spectroscopy: A new method for deep level characterization S Duenas, M Jaraiz, J Vicente, E Rubio, L Bailon, J Barbolla
Journal of applied physics 61 (7), 2541-2545, 1987
34 1987 Electrical characterization of atomic-layer-deposited hafnium oxide films from hafnium tetrakis (dimethylamide) and water/ozone: Effects of growth temperature, oxygen source … H García, H Castán, S Duenas, L Bailón, F Campabadal, O Beldarrain, ...
Journal of Vacuum Science & Technology A 31 (1), 2013
31 2013 Current pulses to control the conductance in RRAM devices H García, S Dueñas, ÓG Ossorio, H Castán
IEEE Journal of the Electron Devices Society 8, 291-296, 2020
28 2020 Effect of interlayer trapping and detrapping on the determination of interface state densities on high-k dielectric stacks H Castán, S Dueñas, H García, A Gómez, L Bailón, M Toledano-Luque, ...
Journal of Applied Physics 107 (11), 2010
28 2010 Controlling the intermediate conductance states in RRAM devices for synaptic applications H García, OG Ossorio, S Dueñas, H Castán
Microelectronic Engineering 215, 110984, 2019
27 2019 Study of the admittance hysteresis cycles in TiN/Ti/HfO2/W-based RRAM devices S Dueñas, H Castán, H García, E Miranda, MB Gonzalez, F Campabadal
Microelectronic Engineering 178, 30-33, 2017
26 2017 