| HfOx based vertical resistive random access memory for cost-effective 3D cross-point architecture without cell selector HY Chen, S Yu, B Gao, P Huang, J Kang, HSP Wong 2012 international electron devices meeting, 20.7. 1-20.7. 4, 2012 | 393 | 2012 |
| A physics-based compact model of metal-oxide-based RRAM DC and AC operations P Huang, XY Liu, B Chen, HT Li, YJ Wang, YX Deng, KL Wei, L Zeng, ... IEEE transactions on electron devices 60 (12), 4090-4097, 2013 | 223 | 2013 |
| Reconfigurable Nonvolatile Logic Operations in Resistance Switching Crossbar Array for Large-Scale Circuits. P Huang, J Kang, Y Zhao, S Chen, R Han, Z Zhou, Z Chen, W Ma, M Li, ... Advanced Materials (Deerfield Beach, Fla.) 28 (44), 9758-9764, 2016 | 206 | 2016 |
| Ultra-low-energy three-dimensional oxide-based electronic synapses for implementation of robust high-accuracy neuromorphic computation systems B Gao, Y Bi, HY Chen, R Liu, P Huang, B Chen, L Liu, X Liu, S Yu, ... ACS nano 8 (7), 6998-7004, 2014 | 198 | 2014 |
| Direct Observations of Nanofilament Evolution in Switching Processes in HfO2‐Based Resistive Random Access Memory by In Situ TEM Studies C Li, B Gao, Y Yao, X Guan, X Shen, Y Wang, P Huang, L Liu, X Liu, J Li, ... Advanced Materials 29 (10), 1602976, 2017 | 192 | 2017 |
| RRAM crossbar array with cell selection device: A device and circuit interaction study Y Deng, P Huang, B Chen, X Yang, B Gao, J Wang, L Zeng, G Du, J Kang, ... IEEE transactions on Electron Devices 60 (2), 719-726, 2012 | 191 | 2012 |
| Standards for the characterization of endurance in resistive switching devices M Lanza, R Waser, D Ielmini, JJ Yang, L Goux, J Suñe, AJ Kenyon, ... ACS nano 15 (11), 17214-17231, 2021 | 178 | 2021 |
| Physical mechanisms of endurance degradation in TMO-RRAM B Chen, Y Lu, B Gao, YH Fu, FF Zhang, P Huang, YS Chen, LF Liu, ... 2011 International electron devices meeting, 12.3. 1-12.3. 4, 2011 | 176 | 2011 |
| A SPICE model of resistive random access memory for large-scale memory array simulation H Li, P Huang, B Gao, B Chen, X Liu, J Kang IEEE Electron Device Letters 35 (2), 211-213, 2013 | 146 | 2013 |
| Variation-aware, reliability-emphasized design and optimization of RRAM using SPICE model H Li, Z Jiang, P Huang, Y Wu, HY Chen, B Gao, XY Liu, JF Kang, ... 2015 Design, Automation & Test in Europe Conference & Exhibition (DATE …, 2015 | 111 | 2015 |
| A learnable parallel processing architecture towards unity of memory and computing H Li, B Gao, Z Chen, Y Zhao, P Huang, H Ye, L Liu, X Liu, J Kang Scientific reports 5 (1), 13330, 2015 | 93 | 2015 |
| Oxide-based RRAM: Unified microscopic principle for both unipolar and bipolar switching B Gao, JF Kang, YS Chen, FF Zhang, B Chen, P Huang, LF Liu, XY Liu, ... 2011 International Electron Devices Meeting, 17.4. 1-17.4. 4, 2011 | 88 | 2011 |
| Low-Power Resistive Switching Characteristic in HfO2/TiOx Bi-Layer Resistive Random-Access Memory X Ding, Y Feng, P Huang, L Liu, J Kang Nanoscale research letters 14, 1-7, 2019 | 77 | 2019 |
| Analytic model of endurance degradation and its practical applications for operation scheme optimization in metal oxide based RRAM P Huang, B Chen, YJ Wang, FF Zhang, L Shen, R Liu, L Zeng, G Du, ... 2013 IEEE International electron devices meeting, 22.5. 1-22.5. 4, 2013 | 67 | 2013 |
| Compact Model of HfOX-Based Electronic Synaptic Devices for Neuromorphic Computing P Huang, D Zhu, S Chen, Z Zhou, Z Chen, B Gao, L Liu, X Liu, J Kang IEEE Transactions on Electron Devices 64 (2), 614-621, 2017 | 64 | 2017 |
| A physical based analytic model of RRAM operation for circuit simulation P Huang, XY Liu, WH Li, YX Deng, B Chen, Y Lu, B Gao, L Zeng, KL Wei, ... 2012 International Electron Devices Meeting, 26.6. 1-26.6. 4, 2012 | 64 | 2012 |
| BEOL based RRAM with one extra-mask for low cost, highly reliable embedded application in 28 nm node and beyond H Lv, X Xu, P Yuan, D Dong, T Gong, J Liu, Z Yu, P Huang, K Zhang, ... 2017 IEEE International Electron Devices Meeting (IEDM), 2.4. 1-2.4. 4, 2017 | 60 | 2017 |
| Modeling disorder effect of the oxygen vacancy distribution in filamentary analog RRAM for neuromorphic computing B Gao, H Wu, W Wu, X Wang, P Yao, Y Xi, W Zhang, N Deng, P Huang, ... 2017 IEEE International Electron Devices Meeting (IEDM), 4.4. 1-4.4. 4, 2017 | 60 | 2017 |
| Optimized learning scheme for grayscale image recognition in a RRAM based analog neuromorphic system Z Chen, B Gao, Z Zhou, P Huang, H Li, W Ma, D Zhu, L Liu, X Liu, J Kang, ... 2015 IEEE International Electron Devices Meeting (IEDM), 17.7. 1-17.7. 4, 2015 | 59 | 2015 |
| A novel convolution computing paradigm based on NOR flash array with high computing speed and energy efficiency R Han, P Huang, Y Xiang, C Liu, Z Dong, Z Su, Y Liu, L Liu, X Liu, J Kang IEEE Transactions on Circuits and Systems I: Regular Papers 66 (5), 1692-1703, 2019 | 56 | 2019 |
Jinfeng Kang北京大学集成电路学院教授Подтвержден адрес электронной почты в домене pku.edu.cn