Общедоступные статьи - Daniel M. FleetwoodПодробнее...
57 статей недоступны нигде
Evolution of total ionizing dose effects in MOS devices with Moore’s law scaling
DM Fleetwood
IEEE Transactions on Nuclear Science 65 (8), 1465-1481, 2017
Финансирование: US Department of Defense
Total-Ionizing-Dose Effects, Border Traps, and 1/f Noise in Emerging MOS Technologies
DM Fleetwood
IEEE Transactions on Nuclear Science 67 (7), 1216-1240, 2020
Финансирование: US Department of Defense
Effects of applied bias and high field stress on the radiation response of GaN/AlGaN HEMTs
J Chen, YS Puzyrev, R Jiang, EX Zhang, MW McCurdy, DM Fleetwood, ...
IEEE Transactions on Nuclear Science 62 (6), 2423-2430, 2015
Финансирование: US Department of Energy
Border traps and bias-temperature instabilities in MOS devices
DM Fleetwood
Microelectronics Reliability 80, 266-277, 2018
Финансирование: US Department of Defense
Radiation effects in a post-Moore world
DM Fleetwood
IEEE Transactions on Nuclear Science 68 (5), 509-545, 2021
Финансирование: US Department of Defense
Charge Trapping in Al2O3/-Ga2O3-Based MOS Capacitors
MA Bhuiyan, H Zhou, R Jiang, EX Zhang, DM Fleetwood, DY Peide, ...
IEEE Electron Device Letters 39 (7), 1022-1025, 2018
Финансирование: US Department of Defense
Multiple defects cause degradation after high field stress in AlGaN/GaN HEMTs
R Jiang, X Shen, J Fang, P Wang, EX Zhang, J Chen, DM Fleetwood, ...
IEEE Transactions on Device and Materials Reliability 18 (3), 364-376, 2018
Финансирование: US National Science Foundation, US Department of Defense
Radiation effects in AlGaN/GaN HEMTS
DM Fleetwood, EX Zhang, RD Schrimpf, ST Pantelides
IEEE Transactions on Nuclear Science 69 (5), 1105-1119, 2022
Финансирование: US Department of Defense
Defects and Low-Frequency Noise in Irradiated Black Phosphorus MOSFETs With HfO2Gate Dielectrics
CD Liang, R Ma, Y Su, A O’Hara, EX Zhang, ML Alles, P Wang, SE Zhao, ...
IEEE Transactions on Nuclear Science 65 (6), 1227-1238, 2018
Финансирование: US National Science Foundation, US Department of Defense
Dose-rate dependence of the total-ionizing-dose response of GaN-based HEMTs
R Jiang, EX Zhang, MW McCurdy, P Wang, H Gong, D Yan, RD Schrimpf, ...
IEEE Transactions on Nuclear Science 66 (1), 170-176, 2018
Финансирование: US Department of Defense
Total-ionizing-dose response of highly scaled gate-all-around Si nanowire CMOS transistors
M Gorchichko, EX Zhang, P Wang, S Bonaldo, RD Schrimpf, RA Reed, ...
IEEE Transactions on Nuclear Science 68 (5), 687-696, 2021
Финансирование: US Department of Defense
Comparison of total-ionizing-dose effects in bulk and SOI FinFETs at 90 and 295 K
TD Haeffner, RF Keller, R Jiang, BD Sierawski, MW McCurdy, EX Zhang, ...
IEEE Transactions on Nuclear Science 66 (6), 911-917, 2019
Финансирование: US National Aeronautics and Space Administration
Effects of bias and temperature on interface-trap annealing in MOS and linear bipolar devices
DM Fleetwood
IEEE Transactions on Nuclear Science 69 (3), 587-608, 2022
Финансирование: US Department of Defense
Radiation-induced charge trapping and low-frequency noise of graphene transistors
P Wang, C Perini, A O’Hara, BR Tuttle, EX Zhang, H Gong, C Liang, ...
IEEE Transactions on Nuclear Science 65 (1), 156-163, 2017
Финансирование: US Department of Defense
Single-event multiple transients in conventional and guard-ring hardened inverter chains under pulsed laser and heavy-ion irradiation
R Chen, F Zhang, W Chen, L Ding, X Guo, C Shen, Y Luo, W Zhao, ...
IEEE Transactions on Nuclear Science 64 (9), 2511-2518, 2017
Финансирование: National Natural Science Foundation of China
Total ionizing dose responses of 22-nm FDSOI and 14-nm bulk FinFET charge-trap transistors
RM Brewer, EX Zhang, M Gorchichko, PF Wang, J Cox, SL Moran, ...
IEEE Transactions on Nuclear Science 68 (5), 677-686, 2021
Финансирование: US Department of Defense
Worst-case bias for high voltage, elevated-temperature stress of AlGaN/GaN HEMTs
PF Wang, X Li, EX Zhang, R Jiang, MW McCurdy, BS Poling, ER Heller, ...
IEEE Transactions on Device and Materials Reliability 20 (2), 420-428, 2020
Финансирование: US Department of Defense
Dependence of ideality factor in lateral PNP transistors on surface carrier concentration
X Li, J Yang, HJ Barnaby, KF Galloway, RD Schrimpf, DM Fleetwood, ...
IEEE Transactions on Nuclear Science 64 (6), 1549-1553, 2017
Финансирование: National Natural Science Foundation of China
Low-energy ion-induced single-event burnout in gallium oxide Schottky diodes
RM Cadena, DR Ball, EX Zhang, S Islam, A Senarath, MW McCurdy, ...
IEEE Transactions on Nuclear Science 70 (4), 363-369, 2023
Финансирование: US Department of Defense
Temperature-switching during irradiation as a test for ELDRS in linear bipolar devices
X Li, W Lu, Q Guo, DM Fleetwood, C He, X Wang, X Yu, J Sun, M Liu, ...
IEEE Transactions on Nuclear Science 66 (1), 199-206, 2018
Финансирование: Chinese Academy of Sciences, National Natural Science Foundation of China
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