| Demonstration of an ultraviolet 336 nm AlGaN multiple-quantum-well laser diode H Yoshida, Y Yamashita, M Kuwabara, H Kan Applied physics letters 93 (24), 2008 | 302 | 2008 |
| A 342-nm ultraviolet AlGaN multiple-quantum-well laser diode H Yoshida, Y Yamashita, M Kuwabara, H Kan nature photonics 2 (9), 551-554, 2008 | 251 | 2008 |
| Propionate suppresses hepatic gluconeogenesis via GPR43/AMPK signaling pathway H Yoshida, M Ishii, M Akagawa Archives of Biochemistry and Biophysics 672, 108057, 2019 | 104 | 2019 |
| Radiative and nonradiative recombination in an ultraviolet GaN/AlGaN multiple-quantum-well laser diode H Yoshida, M Kuwabara, Y Yamashita, K Uchiyama, H Kan Applied Physics Letters 96 (21), 2010 | 83 | 2010 |
| AlGaN-based laser diodes for the short-wavelength ultraviolet region H Yoshida, M Kuwabara, Y Yamashita, Y Takagi, K Uchiyama, H Kan New Journal of Physics 11 (12), 125013, 2009 | 83 | 2009 |
| Does higher general trust serve as a psychosocial buffer against social pain? An NIRS study of social exclusion K Yanagisawa, K Masui, K Furutani, M Nomura, M Ura, H Yoshida Social Neuroscience 6 (2), 190-197, 2011 | 76 | 2011 |
| Novel UV devices on high-quality AlGaN using grooved underlying layer H Tsuzuki, F Mori, K Takeda, M Iwaya, S Kamiyama, H Amano, I Akasaki, ... Journal of crystal growth 311 (10), 2860-2863, 2009 | 73 | 2009 |
| Entirely crack-free ultraviolet GaN/AlGaN laser diodes grown on 2-in. sapphire substrate H Yoshida, Y Takagi, M Kuwabara, H Amano, H Kan Japanese Journal of Applied Physics 46 (9R), 5782, 2007 | 71 | 2007 |
| Fabrication of deep-ultraviolet-light-source tube using Si-doped AlGaN Y Shimahara, H Miyake, K Hiramatsu, F Fukuyo, T Okada, H Takaoka, ... Applied physics express 4 (4), 042103, 2011 | 70 | 2011 |
| Formation of GaN self-organized nanotips by reactive ion etching H Yoshida, T Urushido, H Miyake, K Hiramatsu Japanese Journal of Applied Physics 40 (12A), L1301, 2001 | 69 | 2001 |
| High‐performance UV emitter grown on high‐crystalline‐quality AlGaN underlying layer H Tsuzuki, F Mori, K Takeda, T Ichikawa, M Iwaya, S Kamiyama, H Amano, ... physica status solidi (a) 206 (6), 1199-1204, 2009 | 67 | 2009 |
| Audio apparatus R Matsumoto, D Ishikawa, H Yoshida, M Hamada, C Akaishi US Patent 6,388,951, 2002 | 66 | 2002 |
| Dose-dependent response of plasma ghrelin and growth hormone concentrations to bovine ghrelin in Holstein heifers H ThidarMyint, H Yoshida, T Ito, H Kuwayama Journal of endocrinology 189 (3), 655-664, 2006 | 65 | 2006 |
| A 350-nm-band GaN/AlGaN multiple-quantum-well laser diode on bulk GaN Y Aoki, M Kuwabara, Y Yamashita, Y Takagi, A Sugiyama, H Yoshida Applied Physics Letters 107 (15), 2015 | 61 | 2015 |
| Hyperfine fields and spin-lattice relaxation of impurity nuclei in ferromagnetic transition metals J Kanamori, HK Yoshida, K Terakura Hyperfine Interactions 9 (1-4), 363-378, 1981 | 61 | 1981 |
| Substrate holding apparatus and polishing apparatus T Togawa, H Yoshida, O Nabeya, M Fukushima, K Fukaya US Patent 7,357,699, 2008 | 57 | 2008 |
| Over 1 W record-peak-power operation of a 338 nm AlGaN multiple-quantum-well laser diode on a GaN substrate H Taketomi, Y Aoki, Y Takagi, A Sugiyama, M Kuwabara, H Yoshida Japanese Journal of Applied Physics 55 (5S), 05FJ05, 2016 | 54 | 2016 |
| Effects of Lewis number on the burning intensity of Bunsen flames M Mizomoto, H Yoshida Combustion and flame 70 (1), 47-60, 1987 | 53 | 1987 |
| Analysis of twin defects in GaAs nanowires and tetrahedra and their correlation to GaAs (1 1 1) B surface reconstructions in selective-area metal organic vapour-phase epitaxy H Yoshida, K Ikejiri, T Sato, S Hara, K Hiruma, J Motohisa, T Fukui Journal of crystal growth 312 (1), 52-57, 2009 | 52 | 2009 |
| Modification of lithium/electrolyte interface by plasma polymerization of 1, 1-difluoroethene Z Takehara, Z Ogumi, Y Uchimoto, K Yasuda, H Yoshida Journal of power sources 44 (1-3), 377-383, 1993 | 52 | 1993 |
Hideto MiyakeMie UniversityПодтвержден адрес электронной почты в домене elec.mie-u.ac.jp
