InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 μm VM Ustinov, NA Maleev, AE Zhukov, AR Kovsh, AY Egorov, AV Lunev, ...
Applied physics letters 74 (19), 2815-2817, 1999
517 1999 InAs-InGaAs quantum dot VCSELs on GaAs substrates emitting at 1.3 µm JA Lott, NN Ledentsov, VM Ustinov, NA Maleev, AE Zhukov, AR Kovsh, ...
Electronics Letters 36 (16), 1384-1385, 2000
353 2000 The role of Auger recombination in the temperature-dependent output characteristics (T=∞) of p-doped 1.3 μm quantum dot lasers S Fathpour, Z Mi, P Bhattacharya, AR Kovsh, SS Mikhrin, IL Krestnikov, ...
Applied Physics Letters 85 (22), 5164-5166, 2004
319 2004 Quantum dot lasers: breakthrough in optoelectronics D Bimberg, M Grundmann, F Heinrichsdorff, NN Ledentsov, VM Ustinov, ...
Thin solid films 367 (1-2), 235-249, 2000
292 2000 Tuning quantum dot properties by activated phase separation of an InGa (Al) As alloy grown on InAs stressors MV Maximov, AF Tsatsul’nikov, BV Volovik, DS Sizov, YM Shernyakov, ...
Physical Review B 62 (24), 16671, 2000
258 2000 High performance quantum dot lasers on GaAs substrates operating in 1.5 µm range NN Ledentsov, AR Kovsh, AE Zhukov, NA Maleev, SS Mikhrin, ...
Electronics Letters 39 (15), 1126-1128, 2003
218 2003 High power temperature-insensitive 1.3 µm InAs/InGaAs/GaAs quantum dot lasers SS Mikhrin, AR Kovsh, IL Krestnikov, AV Kozhukhov, DA Livshits, ...
Semiconductor science and technology 20 (5), 340, 2005
198 2005 InAs/InGaAs/GaAs quantum dot lasers of 1.3 µm range with high (88%) differential efficiency AR Kovsh, NA Maleev, AE Zhukov, SS Mikhrin, AP Vasil'Ev, ...
Electronics Letters 38 (19), 1104-1106, 2002
198 2002 High-power picosecond and femtosecond pulse generation from a two-section mode-locked quantum-dot laser EU Rafailov, MA Cataluna, W Sibbett, ND Il’Inskaya, YM Zadiranov, ...
Applied Physics Letters 87 (8), 2005
194 2005 AlGaAs/GaAs photovoltaic cells with an array of InGaAs QDs SA Blokhin, AV Sakharov, AM Nadtochy, AS Pauysov, MV Maximov, ...
Semiconductors 43, 514-518, 2009
184 2009 Strain engineering of self-organized InAs quantum dots F Guffarth, R Heitz, A Schliwa, O Stier, NN Ledentsov, AR Kovsh, ...
Physical Review B 64 (8), 085305, 2001
179 2001 1.3 µm GaAs-based laser using quantum dots obtained by activated spinodal decomposition YM Shernyakov, DA Bedarev, EY Kondrat'eva, PS Kop'ev, AR Kovsh, ...
Electronics Letters 35 (11), 898-900, 1999
172 1999 Hole and electron emission from InAs quantum dots CMA Kapteyn, M Lion, R Heitz, D Bimberg, PN Brunkov, BV Volovik, ...
Applied Physics Letters 76 (12), 1573-1575, 2000
163 2000 InAs/InGaAs/GaAs quantum dot lasers of 1.3 μm range with enhanced optical gain AR Kovsh, NA Maleev, AE Zhukov, SS Mikhrin, AP Vasil’ev, ...
Journal of Crystal Growth 251 (1-4), 729-736, 2003
158 2003 Continuous-wave operation of long-wavelength quantum-dot diode laser on a GaAs substrate AE Zhukov, AR Kovsh, VM Ustinov, YM Shernyakov, SS Mikhrin, ...
IEEE Photonics Technology Letters 11 (11), 1345-1347, 1999
158 1999 Long-wavelength lasing from multiply stacked InAs/InGaAs quantum dots on GaAs substrates AE Zhukov, AR Kovsh, NA Maleev, SS Mikhrin, VM Ustinov, ...
Applied physics letters 75 (13), 1926-1928, 1999
158 1999 Quantum dot laser with A Kovsh, I Krestnikov, D Livshits, S Mikhrin, J Weimert, A Zhukov
Optics letters 32 (7), 793-795, 2007
149 2007 35GHz mode-locking of 1.3 μm quantum dot lasers M Kuntz, G Fiol, M Lämmlin, D Bimberg, MG Thompson, KT Tan, ...
Applied Physics Letters 85 (5), 843-845, 2004
149 2004 Feedback sensitivity of 1.3 µm InAs/GaAs quantum dot lasers D O'Brien, SP Hegarty, G Huyet, JG McInerney, T Kettler, M Laemmlin, ...
Electronics Letters 39 (25), 1819-1820, 2003
138 2003 High-power continuous-wave operation of a InGaAs/AlGaAs quantum dot laser MV Maximov, YM Shernyakov, AF Tsatsul'nikov, AV Lunev, AV Sakharov, ...
Journal of applied physics 83 (10), 5561-5563, 1998
127 1998 
Nikolay LedentsovVI Systems GmbHПодтвержден адрес электронной почты в домене v-i-systems.com
