| Charge collection and charge sharing in a 130 nm CMOS technology OA Amusan, AF Witulski, LW Massengill, BL Bhuva, PR Fleming, ML Alles, ... IEEE Transactions on nuclear science 53 (6), 3253-3258, 2006 | 489 | 2006 |
| The contribution of nuclear reactions to heavy ion single event upset cross-section measurements in a high-density SEU hardened SRAM KM Warren, RA Weller, MH Mendenhall, RA Reed, DR Ball, CL Howe, ... IEEE transactions on nuclear science 52 (6), 2125-2131, 2005 | 202 | 2005 |
| A bias-dependent single-event compact model implemented into BSIM4 and a 90 nm CMOS process design kit JS Kauppila, AL Sternberg, ML Alles, AM Francis, J Holmes, OA Amusan, ... IEEE Transactions on nuclear Science 56 (6), 3152-3157, 2009 | 199 | 2009 |
| Radiation effects in advanced multiple gate and silicon-on-insulator transistors E Simoen, M Gaillardin, P Paillet, RA Reed, RD Schrimpf, ML Alles, ... IEEE Transactions on Nuclear Science 60 (3), 1970-1991, 2013 | 153 | 2013 |
| Effect of well and substrate potential modulation on single event pulse shape in deep submicron CMOS S DasGupta, AF Witulski, BL Bhuva, ML Alles, RA Reed, OA Amusan, ... IEEE Transactions on Nuclear Science 54 (6), 2407-2412, 2007 | 133 | 2007 |
| HBD layout isolation techniques for multiple node charge collection mitigation JD Black, AL Sternberg, ML Alles, AF Witulski, BL Bhuva, LW Massengill, ... IEEE transactions on nuclear science 52 (6), 2536-2541, 2005 | 133 | 2005 |
| Analysis of parasitic PNP bipolar transistor mitigation using well contacts in 130 nm and 90 nm CMOS technology BD Olson, OA Amusan, S Dasgupta, LW Massengill, AF Witulski, ... IEEE Transactions on Nuclear Science 54 (4), 894-897, 2007 | 122 | 2007 |
| Two-dimensional methodology for modeling radiation-induced off-state leakage in CMOS technologies IS Esqueda, HJ Barnaby, ML Alles IEEE transactions on nuclear science 52 (6), 2259-2264, 2005 | 121 | 2005 |
| Technology scaling and soft error reliability LW Massengill, BL Bhuva, WT Holman, ML Alles, TD Loveless 2012 IEEE International Reliability Physics Symposium (IRPS), 3C. 1.1-3C. 1.7, 2012 | 108 | 2012 |
| Ion-induced energy pulse mechanism for single-event burnout in high-voltage SiC power MOSFETs and junction barrier Schottky diodes DR Ball, KF Galloway, RA Johnson, ML Alles, AL Sternberg, BD Sierawski, ... IEEE Transactions on Nuclear Science 67 (1), 22-28, 2019 | 107 | 2019 |
| Directional sensitivity of single event upsets in 90 nm CMOS due to charge sharing OA Amusan, LW Massengill, MP Baze, BL Bhuva, AF Witulski, ... IEEE Transactions on Nuclear Science 54 (6), 2584-2589, 2007 | 100 | 2007 |
| Single-event charge enhancement in SOI devices LW Massengill, EV Kerns, SE Kerns, ML Alles IEEE Electron Device Letters 11 (2), 98-99, 1990 | 99 | 1990 |
| Analysis of TID process, geometry, and bias condition dependence in 14-nm FinFETs and implications for RF and SRAM performance MP King, X Wu, M Eller, S Samavedam, MR Shaneyfelt, AI Silva, ... IEEE Transactions on Nuclear Science 64 (1), 285-292, 2016 | 82 | 2016 |
| Bias dependence of total ionizing dose effects in SiGe-MOS FinFETs GX Duan, CX Zhang, EX Zhang, J Hachtel, DM Fleetwood, RD Schrimpf, ... IEEE Transactions on Nuclear Science 61 (6), 2834-2838, 2014 | 82 | 2014 |
| Model for CMOS/SOI single-event vulnerability SE Kerns, LW Massengill, DV Kerns, ML Alles, TW Houston, H Lu, LR Hite IEEE Transactions on Nuclear Science 36 (6), 2305-2310, 1989 | 82 | 1989 |
| The impact of delta-rays on single-event upsets in highly scaled SOI SRAMs MP King, RA Reed, RA Weller, MH Mendenhall, RD Schrimpf, ML Alles, ... IEEE Transactions on Nuclear Science 57 (6), 3169-3175, 2010 | 79 | 2010 |
| A comparison of the SEU response of planar and FinFET D flip-flops at advanced technology nodes P Nsengiyumva, DR Ball, JS Kauppila, N Tam, M McCurdy, WT Holman, ... IEEE Transactions on nuclear science 63 (1), 266-272, 2016 | 78 | 2016 |
| Geometry dependence of total-dose effects in bulk FinFETs I Chatterjee, EX Zhang, BL Bhuva, RA Reed, ML Alles, NN Mahatme, ... IEEE Transactions on Nuclear Science 61 (6), 2951-2958, 2014 | 78 | 2014 |
| Implantation process using sub-stoichiometric, oxygen doses at different energies RP Dolan, BF Cordts III, MJ Anc, ML Alles US Patent 6,417,078, 2002 | 76 | 2002 |
| Low-energy X-ray and ozone-exposure induced defect formation in graphene materials and devices EX Zhang, AKM Newaz, B Wang, S Bhandaru, CX Zhang, DM Fleetwood, ... IEEE transactions on nuclear science 58 (6), 2961-2967, 2011 | 75 | 2011 |
