Общедоступные статьи - F. Shadi Shahedipour-SandvikПодробнее...
8 статей недоступны нигде
Visible-blind APD heterostructure design with superior field confinement and low operating voltage
J Bulmer, P Suvarna, J Leathersich, J Marini, I Mahaboob, N Newman, ...
IEEE Photonics Technology Letters 28 (1), 39-42, 2015
Финансирование: US National Aeronautics and Space Administration
Selective area epitaxial growth of stretchable geometry AlGaN-GaN heterostructures
I Mahaboob, J Marini, K Hogan, E Rocco, RP Tompkins, N Lazarus, ...
Journal of Electronic Materials 47, 6625-6634, 2018
Финансирование: US Department of Defense
Mg incorporation efficiency in pulsed MOCVD of N-polar GaN: Mg
J Marini, I Mahaboob, K Hogan, S Novak, LD Bell, ...
Journal of Electronic Materials 46 (10), 5820-5826, 2017
Финансирование: US National Aeronautics and Space Administration
Electrical properties of AlGaN/GaN HEMTs in stretchable geometries
RP Tompkins, I Mahaboob, F Shahedipour-Sandvik, N Lazarus
Solid-State Electronics 136, 36-42, 2017
Финансирование: US Department of Defense
Removal of Dry-Etch-Induced Surface Layer Damage from p-GaN by Photoelectrochemical Etching
V Meyers, E Rocco, K Hogan, S Tozier, B McEwen, I Mahaboob, ...
Journal of Electronic Materials 49, 3481-3489, 2020
Финансирование: US Department of Energy
Defect-mediated diffusion of implanted Mg in GaN: Suppressing dopant redistribution by sequential thermal and microwave annealing
V Meyers, E Rocco, B McEwen, M Shevelev, V Sklyar, ...
Journal of Applied Physics 133 (15), 2023
Финансирование: US Department of Energy
Novel gyrotron beam annealing method for Mg-implanted bulk GaN
K Hogan, S Tozier, E Rocco, I Mahaboob, V Meyers, B McEwen, ...
2019 IEEE International Reliability Physics Symposium (IRPS), 1-6, 2019
Финансирование: US Department of Energy
III-N material based deep UV APDs for emergent defense, space, and commercial imaging and spectroscopy applications
P Oduor, B McEwen, KK Choi, F Shahedipour-Sandvik, A Dutta
Image Sensing Technologies: Materials, Devices, Systems, and Applications X …, 2023
Финансирование: US National Aeronautics and Space Administration
31 статья доступна в некоторых источниках
Single photon counting UV solar-blind detectors using silicon and III-nitride materials
S Nikzad, M Hoenk, AD Jewell, JJ Hennessy, AG Carver, TJ Jones, ...
Sensors 16 (6), 927, 2016
Финансирование: US National Science Foundation, US National Aeronautics and Space Administration
X-ray topography characterization of gallium nitride substrates for power device development
B Raghothamachar, Y Liu, H Peng, T Ailihumaer, M Dudley, ...
Journal of Crystal Growth 544, 125709, 2020
Финансирование: US Department of Energy
Polarization engineered N-polar Cs-free GaN photocathodes
J Marini, I Mahaboob, E Rocco, LD Bell, F Shahedipour-Sandvik
Journal of Applied Physics 124 (11), 2018
Финансирование: US National Aeronautics and Space Administration
Influence of mask material on the electrical properties of selective area epitaxy GaN microstructures
I Mahaboob, K Hogan, SW Novak, F Shahedipour-Sandvik, RP Tompkins, ...
Journal of Vacuum Science & Technology B 36 (3), 2018
Финансирование: US Department of Defense
MOCVD growth of N-polar GaN on on-axis sapphire substrate: impact of AlN nucleation layer on GaN surface hillock density
J Marini, J Leathersich, I Mahaboob, J Bulmer, N Newman, ...
Journal of Crystal Growth 442, 25-30, 2016
Финансирование: US National Aeronautics and Space Administration
p-type conductivity and damage recovery in implanted GaN annealed by rapid gyrotron microwave annealing
V Meyers, E Rocco, TJ Anderson, JC Gallagher, MA Ebrish, K Jones, ...
Journal of Applied Physics 128 (8), 2020
Финансирование: US Department of Energy
Hillock assisted p-type enhancement in N-polar GaN: Mg films grown by MOCVD
E Rocco, O Licata, I Mahaboob, K Hogan, S Tozier, V Meyers, B McEwen, ...
Scientific Reports 10 (1), 1426, 2020
Финансирование: US National Aeronautics and Space Administration
Synchrotron X-ray topography characterization of high quality ammonothermal-grown gallium nitride substrates
Y Liu, B Raghothamachar, H Peng, T Ailihumaer, M Dudley, R Collazo, ...
Journal of Crystal Growth 551, 125903, 2020
Финансирование: US Department of Energy
Dynamic control of AlGaN/GaN HEMT characteristics by implementation of a p-GaN body-diode-based back-gate
I Mahaboob, M Yakimov, K Hogan, E Rocco, S Tozier, ...
IEEE Journal of the Electron Devices Society 7, 581-588, 2019
Финансирование: US Department of Defense
The effect of annealing on photoluminescence from defects in ammonothermal GaN
MA Reshchikov, DO Demchenko, D Ye, O Andrieiev, M Vorobiov, ...
Journal of Applied Physics 131 (3), 2022
Финансирование: US National Science Foundation, Narodowe Centrum Nauki
Textured Poling of the Ferroelectric Dielectric Layer for Improved Organic Field‐Effect Transistors
A Laudari, A Pickett, F Shahedipour‐Sandvik, K Hogan, JE Anthony, X He, ...
Advanced Materials Interfaces 6 (4), 1801787, 2019
Финансирование: US National Science Foundation
Photoluminescence related to Ca in GaN
MA Reshchikov, DO Demchenko, M Vorobiov, O Andrieiev, B McEwen, ...
Physical Review B 106 (3), 035206, 2022
Финансирование: US National Science Foundation
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