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F. Shadi Shahedipour-Sandvik
F. Shadi Shahedipour-Sandvik
SUNY College of Nanoscale Science and Engineering
Подтвержден адрес электронной почты в домене sunypoly.edu - Главная страница
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Процитировано
Год
Microstructural origin of leakage current in GaN/InGaN light-emitting diodes
XA Cao, JA Teetsov, F Shahedipour-Sandvik, SD Arthur
Journal of crystal growth 264 (1-3), 172-177, 2004
1582004
Investigation of the formation of the 2.8 eV luminescence band in p-type GaN:Mg
F Shahedipour, BW Wessels
Applied Physics Letters 76 (21), 3011-3013, 2000
1462000
Photoluminescence band near 2.9 eV in undoped GaN epitaxial layers
MA Reshchikov, F Shahedipour, RY Korotkov, BW Wessels, MP Ulmer
Journal of Applied Physics 87 (7), 3351-3354, 2000
1442000
AlxGa1− xN for solar-blind UV detectors
P Sandvik, K Mi, F Shahedipour, R McClintock, A Yasan, P Kung, ...
Journal of crystal growth 231 (3), 366-370, 2001
1342001
Theoretical prediction of GaN nanostructure equilibrium and nonequilibrium shapes
V Jindal, F Shahedipour-Sandvik
Journal of Applied Physics 106 (8), 2009
1252009
Density functional theoretical study of surface structure and adatom kinetics for wurtzite AlN
V Jindal, F Shahedipour-Sandvik
Journal of Applied Physics 105 (8), 2009
1082009
Efficient GaN photocathodes for low-level ultraviolet signal detection
FS Shahedipour, MP Ulmer, BW Wessels, CL Joseph, T Nihashi
IEEE Journal of Quantum Electronics 38 (4), 333-335, 2002
772002
AlGaN devices and growth of device structures
KA Jones, TP Chow, M Wraback, M Shatalov, Z Sitar, F Shahedipour, ...
Journal of Materials Science 50, 3267-3307, 2015
732015
Development of strain reduced GaN on Si (111) by substrate engineering
M Jamil, JR Grandusky, V Jindal, F Shahedipour-Sandvik, S Guha, M Arif
Applied Physics Letters 87 (8), 2005
662005
A Tersoff‐based interatomic potential for wurtzite AlN
M Tungare, Y Shi, N Tripathi, P Suvarna, F Shahedipour‐Sandvik
physica status solidi (a) 208 (7), 1569-1572, 2011
602011
Single photon counting UV solar-blind detectors using silicon and III-nitride materials
S Nikzad, M Hoenk, AD Jewell, JJ Hennessy, AG Carver, TJ Jones, ...
Sensors 16 (6), 927, 2016
572016
Influence of defects on electrical and optical characteristics of GaN/InGaN-based light-emitting diodes
X Cao, K Topol, F Shahedipour-Sandvik, J Teetsov, PM Sandvik, ...
Solid State Lighting II 4776, 105-113, 2002
432002
Design and characterization of GaN pin diodes for betavoltaic devices
MR Khan, JR Smith, RP Tompkins, S Kelley, M Litz, J Russo, ...
Solid-State Electronics 136, 24-29, 2017
422017
Deep acceptors in undoped GaN
MA Reshchikov, F Shahedipour, RY Korotkov, MP Ulmer, BW Wessels
Physica B: Condensed Matter 273, 105-108, 1999
421999
Mechanism of large area dislocation defect reduction in GaN layers on AlN∕ Si (111) by substrate engineering
M Jamil, JR Grandusky, V Jindal, N Tripathi, F Shahedipour-Sandvik
Journal of Applied Physics 102 (2), 2007
392007
Progress in the fabrication of GaN photocathodes
MP Ulmer, BW Wessels, F Shahedipour, RY Korotokov, CL Joseph, ...
Photodetectors: Materials and Devices VI 4288, 246-253, 2001
372001
Direct immobilization and hybridization of DNA on group III nitride semiconductors
X Xu, V Jindal, F Shahedipour-Sandvik, M Bergkvist, NC Cady
Applied Surface Science 255 (11), 5905-5909, 2009
352009
Computational and experimental studies on the growth of nonpolar surfaces of gallium nitride
V Jindal, F Shahedipour-Sandvik
Journal of Applied Physics 107 (5), 2010
342010
Development of native, single crystal AlN substrates for device applications
LJ Schowalter, SB Schujman, W Liu, M Goorsky, MC Wood, J Grandusky, ...
physica status solidi (a) 203 (7), 1667-1671, 2006
342006
X-ray topography characterization of gallium nitride substrates for power device development
B Raghothamachar, Y Liu, H Peng, T Ailihumaer, M Dudley, ...
Journal of Crystal Growth 544, 125709, 2020
312020
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Статьи 1–20