Общедоступные статьи - Marco SilvestriПодробнее...
1 статья недоступна нигде
Influence of different carbon doping on the performance and reliability of InAlN/GaN HEMTs
I Rossetto, F Rampazzo, M Meneghini, M Silvestri, C Dua, P Gamarra, ...
Microelectronics Reliability 54 (9-10), 2248-2252, 2014
Финансирование: European Commission
3 статьи доступны в некоторых источниках
Degradation mechanisms of GaN HEMTs with p-type gate under forward gate bias overstress
M Ruzzarin, M Meneghini, A Barbato, V Padovan, O Haeberlen, ...
IEEE Transactions on Electron Devices 65 (7), 2778-2783, 2018
Финансирование: European Commission
Localization of off-stress-induced damage in AlGaN/GaN high electron mobility transistors by means of low frequency 1/f noise measurements
M Silvestri, MJ Uren, N Killat, D Marcon, M Kuball
Applied Physics Letters 103 (4), 2013
Финансирование: UK Engineering and Physical Sciences Research Council
Need for defects in floating-buffer AlGaN/GaN HEMTs
MJ Uren, M Silvestri, M Caesar, JW Pomeroy, GAM Hurkx, JA Croon, ...
Proc. CS-MANTECH, 317-319, 2014
Финансирование: UK Engineering and Physical Sciences Research Council
Информация о публикациях и финансировании собрана автоматически.