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Marco Silvestri
Marco Silvestri
Huawei Tehcnologies
Подтвержден адрес электронной почты в домене huawei.com
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Процитировано
Год
Dynamic Transconductance Dispersion Characterization of Channel Hot-Carrier Stressed 0.25-< formula>< img src=
M Silvestri, MJ Uren, M Kuball
IEEE, 0
195*
Iron-induced deep-level acceptor center in GaN/AlGaN high electron mobility transistors: Energy level and cross section
M Silvestri, MJ Uren, M Kuball
Applied Physics Letters 102 (7), 2013
1632013
Intentionally carbon-doped AlGaN/GaN HEMTs: Necessity for vertical leakage paths
MJ Uren, M Silvestri, M Cäsar, GAM Hurkx, JA Croon, J Šonský, M Kuball
IEEE Electron Device Letters 35 (3), 327-329, 2014
1552014
Total ionizing dose effects in 130-nm commercial CMOS technologies for HEP experiments
L Gonella, F Faccio, M Silvestri, S Gerardin, D Pantano, V Re, ...
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2007
1472007
Degradation mechanisms of GaN HEMTs with p-type gate under forward gate bias overstress
M Ruzzarin, M Meneghini, A Barbato, V Padovan, O Haeberlen, ...
IEEE Transactions on Electron Devices 65 (7), 2778-2783, 2018
732018
Gate bias dependence of defect-mediated hot-carrier degradation in GaN HEMTs
Y Puzyrev, S Mukherjee, J Chen, T Roy, M Silvestri, RD Schrimpf, ...
IEEE Transactions on Electron Devices 61 (5), 1316-1320, 2014
582014
Localization of off-stress-induced damage in AlGaN/GaN high electron mobility transistors by means of low frequency 1/f noise measurements
M Silvestri, MJ Uren, N Killat, D Marcon, M Kuball
Applied Physics Letters 103 (4), 2013
502013
Impact of residual carbon impurities and gallium vacancies on trapping effects in AlGaN/GaN metal insulator semiconductor high electron mobility transistors
M Huber, M Silvestri, L Knuuttila, G Pozzovivo, A Andreev, A Kadashchuk, ...
Applied Physics Letters 107 (3), 2015
422015
Impact of proton irradiation-induced bulk defects on gate-lag in GaN HEMTs
A Kalavagunta, M Silvestri, MJ Beck, SK Dixit, RD Schrimpf, RA Reed, ...
IEEE Transactions on Nuclear Science 56 (6), 3192-3195, 2009
402009
Development of custom radiation-tolerant DCDC converter ASICs
F Faccio, S Michelis, S Orlandi, G Blanchot, C Fuentes, S Saggini, ...
Journal of Instrumentation 5 (11), C11016, 2010
332010
Channel hot carrier stress on irradiated 130-nm NMOSFETs
M Silvestri, S Gerardin, A Paccagnella, F Faccio, L Gonella
IEEE Transactions on Nuclear Science 55 (4), 1960-1967, 2008
332008
Neutron-induced soft errors in graphic processing units
P Rech, C Aguiar, R Ferreira, M Silvestri, A Griffoni, C Frost, L Carro
2012 IEEE Radiation Effects Data Workshop, 1-6, 2012
262012
Degradation induced by X-ray irradiation and channel hot carrier stresses in 130-nm NMOSFETs with enclosed layout
M Silvestri, S Gerardin, A Paccagnella, F Faccio
IEEE Transactions on Nuclear Science 55 (6), 3216-3223, 2008
252008
The role of irradiation bias on the time-dependent dielectric breakdown of 130-nm MOSFETs exposed to X-rays
M Silvestri, S Gerardin, RD Schrimpf, DM Fleetwood, F Faccio, ...
IEEE Transactions on Nuclear Science 56 (6), 3244-3249, 2009
212009
Characterization of AlN/AlGaN/GaN: C heterostructures grown on Si (111) using atom probe tomography, secondary ion mass spectrometry, and vertical current-voltage measurements
M Huber, I Daumiller, A Andreev, M Silvestri, L Knuuttila, A Lundskog, ...
Journal of Applied Physics 119 (12), 2016
192016
Gate rupture in ultra-thin gate oxides irradiated with heavy ions
M Silvestri, S Gerardin, A Paccagnella, G Ghidini
2008 European Conference on Radiation and Its Effects on Components and …, 2008
192008
Fast System to measure the dynamic on‐resistance of on‐wafer 600 V normally off GaN HEMTs in hard‐switching application conditions
A Barbato, M Barbato, M Meneghini, M Silvestri, T Detzel, O Haeberlen, ...
IET Power Electronics 13 (11), 2390-2397, 2020
172020
Impact of Spacecraft-Shell Composition on 1 GeV/Nucleon Fe Ion-Fragmentation and Dose Reduction
M Silvestri, E Tracino, M Briccarello, M Belluco, R Destefanis, C Lobascio, ...
IEEE Transactions on Nuclear Science 58 (6), 3126-3133, 2011
172011
Need for defects in floating-buffer AlGaN/GaN HEMTs
MJ Uren, M Silvestri, M Caesar, JW Pomeroy, GAM Hurkx, JA Croon, ...
Proc. CS-MANTECH, 317-319, 2014
142014
Influence of different carbon doping on the performance and reliability of InAlN/GaN HEMTs
I Rossetto, F Rampazzo, M Meneghini, M Silvestri, C Dua, P Gamarra, ...
Microelectronics Reliability 54 (9-10), 2248-2252, 2014
102014
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