| Synthesis of antimonene on germanium M Fortin-Deschênes, O Waller, TO Mentes, A Locatelli, S Mukherjee, ... Nano letters 17 (8), 4970-4975, 2017 | 216 | 2017 |
| Heterogeneous integration of compound semiconductors O Moutanabbir, U Gösele Annual Review of Materials Research 40 (1), 469-500, 2010 | 190 | 2010 |
| Colossal injection of catalyst atoms into silicon nanowires O Moutanabbir, D Isheim, H Blumtritt, S Senz, E Pippel, DN Seidman Nature 496 (7443), 78-82, 2013 | 183 | 2013 |
| Enhanced catalytic activity for methanol electro‐oxidation of uniformly dispersed nickel oxide nanoparticles—carbon nanotube hybrid materials X Tong, Y Qin, X Guo, O Moutanabbir, X Ao, E Pippel, L Zhang, M Knez small 8 (22), 3390-3395, 2012 | 177 | 2012 |
| Monolithic Infrared Silicon Photonics: The Rise of (Si)GeSn Semiconductors O Moutanabbir, S Assali, X Gong, E O'Reilly, CA Broderick, B Marzban, ... Applied Physics Letters 118, 110502, 2021 | 140 | 2021 |
| Enhanced Sn incorporation in GeSn epitaxial semiconductors via strain relaxation S Assali, J Nicolas, O Moutanabbir Journal of Applied Physics 125 (2), 2019 | 103 | 2019 |
| Atomically uniform Sn-rich GeSn semiconductors with 3.0–3.5 μm room-temperature optical emission S Assali, J Nicolas, S Mukherjee, A Dijkstra, O Moutanabbir Applied Physics Letters 112 (25), 2018 | 94 | 2018 |
| Indirect-to-direct band gap transition in relaxed and strained Ge1− x− ySixSny ternary alloys A Attiaoui, O Moutanabbir Journal of Applied Physics 116 (6), 2014 | 88 | 2014 |
| Improved mechanical stability of dried collagen membrane after metal infiltration SM Lee, E Pippel, O Moutanabbir, I Gunkel, T Thurn-Albrecht, M Knez ACS applied materials & interfaces 2 (8), 2436-2441, 2010 | 88 | 2010 |
| Strain and composition effects on Raman vibrational modes of silicon-germanium-tin ternary alloys JH Fournier-Lupien, S Mukherjee, S Wirths, E Pippel, N Hayazawa, ... Applied physics letters 103 (26), 2013 | 86 | 2013 |
| The thermal stability of epitaxial GeSn layers P Zaumseil, Y Hou, MA Schubert, N Von Den Driesch, D Stange, ... APL Materials 6 (7), 2018 | 80 | 2018 |
| All‐Group IV Transferable Membrane Mid‐Infrared Photodetectors MRM Atalla, S Assali, A Attiaoui, C Lemieux‐Leduc, A Kumar, S Abdi, ... Advanced Functional Materials 31 (3), 2006329, 2021 | 78 | 2021 |
| An alternative route towards metal–polymer hybrid materials prepared by vapor‐phase processing SM Lee, V Ischenko, E Pippel, A Masic, O Moutanabbir, P Fratzl, M Knez Advanced Functional Materials 21 (16), 3047-3055, 2011 | 71 | 2011 |
| High-bandwidth extended-SWIR GeSn photodetectors on silicon achieving ultrafast broadband spectroscopic response MRM Atalla, S Assali, S Koelling, A Attiaoui, O Moutanabbir ACS Photonics 9 (4), 1425-1433, 2022 | 62 | 2022 |
| Atomic fluctuations lifting the energy degeneracy in Si/SiGe quantum dots B Paquelet Wuetz, MP Losert, S Koelling, LEA Stehouwer, AMJ Zwerver, ... Nature Communications 13 (1), 7730, 2022 | 60 | 2022 |
| Strain relaxation in patterned strained silicon directly on insulator structures RZ Lei, W Tsai, I Aberg, TB O’Reilly, JL Hoyt, DA Antoniadis, HI Smith, ... Applied Physics Letters 87 (25), 2005 | 56 | 2005 |
| Coherent X‐Ray Diffraction Imaging and Characterization of Strain in Silicon‐on‐Insulator Nanostructures G Xiong, O Moutanabbir, M Reiche, R Harder, I Robinson Advanced Materials 26 (46), 7747-7763, 2014 | 54 | 2014 |
| Atomically Smooth p-Doped Silicon Nanowires Catalyzed by Aluminum at Low Temperature O Moutanabbir, S Senz, R Scholz, M Alexe, Y Kim, E Pippel, Y Wang, ... ACS nano 5 (2), 1313-1320, 2011 | 54 | 2011 |
| Fast atom beam-activated n-Si/n-GaAs wafer bonding with high interfacial transparency and electrical conductivity S Essig, O Moutanabbir, A Wekkeli, H Nahme, E Oliva, AW Bett, F Dimroth Journal of Applied Physics 113 (20), 2013 | 51 | 2013 |
| Tensile strained germanium nanowires measured by photocurrent spectroscopy and X-ray microdiffraction K Guilloy, N Pauc, A Gassenq, P Gentile, S Tardif, F Rieutord, V Calvo Nano Letters 15 (4), 2429-2433, 2015 | 50 | 2015 |
