| GaN-based light-emitting diodes: Efficiency at high injection levels U Ozgur, H Liu, X Li, X Ni, H Morkoc Proceedings of the IEEE 98 (7), 1180-1196, 2010 | 165 | 2010 |
| Efficiency retention at high current injection levels in m-plane InGaN light emitting diodes X Li, X Ni, J Lee, M Wu, Ö Ü, H Morkoç, T Paskova, G Mulholland, ... SPIE Proceedings, 7602, 2010 | 133* | 2010 |
| On carrier spillover in c-and m-plane InGaN light emitting diodes J Lee, X Li, X Ni, Ü Özgür, H Morkoç, T Paskova, G Mulholland, KR Evans Applied Physics Letters 95, 201113, 2009 | 133* | 2009 |
| Efficiency retention at high current injection levels in m-plane InGaN light emitting diodes X Li, X Ni, J Lee, M Wu, Ü Özgür, H Morkoç, T Paskova, G Mulholland, ... Applied Physics Letters 95, 121107, 2009 | 133* | 2009 |
| InGaN staircase electron injector for reduction of electron overflow in InGaN light emitting diodes X Ni, X Li, J Lee, S Liu, V Avrutin, Ü Özgür, H Morkoç, A Matulionis, ... Applied Physics Letters 97, 031110, 2010 | 118 | 2010 |
| Hot electron effects on efficiency degradation in InGaN light emitting diodes and designs to mitigate them X Ni, X Li, J Lee, S Liu, V Avrutin, Ü Özgür, H Morkoç, A Matulionis Journal of Applied Physics 108 (3), 033112, 2010 | 86 | 2010 |
| Thermal properties of AlGaN/GaN HFETs on bulk GaN substrates N Killat, M Montes, JW Pomeroy, T Paskova, KR Evans, J Leach, X Li, ... Electron Device Letters, IEEE 33 (3), 366-368, 2012 | 79 | 2012 |
| Growth of monolithic full color GaN based LED with intermediate carrier blocking layers HSE Ghoroury, M Yeh, JC Chen, X Li AIP Advances 6 (7), 075316, 2016 | 74 | 2016 |
| Degradation in InAlN/GaN-based heterostructure field effect transistors: Role of hot phonons JH Leach, CY Zhu, M Wu, X Ni, X Li, J Xie, Ü Özgür, H Morkoç, J Liberis, ... Applied Physics Letters 95, 223504, 2009 | 56 | 2009 |
| Pivotal role of ballistic and quasi-ballistic electrons on LED efficiency X Ni, X Li, J Lee, S Liu, V Avrutin, A Matulionis, U Ozgur, H Morkoç Superlattices and Microstructures 48 (2), 133-153, 2010 | 54 | 2010 |
| Nonpolar m-plane GaN on patterned Si (112) substrates by metalorganic chemical vapor deposition X Ni, M Wu, J Lee, X Li, AA Baski, Ü Özgür, H Morkoç Applied Physics Letters 95, 111102, 2009 | 51 | 2009 |
| Plasmon-enhanced heat dissipation in GaN-based two-dimensional channels A Matulionis, J Liberis, I Matulionienė, M Ramonas, E Šermukšnis, ... Applied Physics Letters 95 (19), 192102, 2009 | 47 | 2009 |
| Synthesis and characterization of room-temperature ferromagnetism in Fe-and Ni-co-doped In2O3 X Li, C Xia, G Pei, X He Journal of Physics and Chemistry of Solids 68 (10), 1836-1840, 2007 | 43 | 2007 |
| Impact of active layer design on InGaN radiative recombination coefficient and LED performance X Li, S Okur, F Zhang, V Avrutin, Ü Özgür, H Morkoç, SM Hong, SH Yen, ... Journal of Applied Physics 111 (6), 063112-063112-8, 2012 | 42 | 2012 |
| Ballistic transport in InGaN-based LEDs: impact on efficiency Ü Özgür, X Ni, X Li, J Lee, S Liu, S Okur, V Avrutin, A Matulionis, H Morkoç Semiconductor Science and Technology 26, 014022, 2011 | 41 | 2011 |
| Effect of hot phonon lifetime on electron velocity in InAlN/AlN/GaN heterostructure field effect transistors on bulk GaN substrates JH Leach, CY Zhu, M Wu, X Ni, X Li, J Xie, Ü Özgür, H Morkoç, J Liberis, ... Applied Physics Letters 96, 133505, 2010 | 41 | 2010 |
| Effect of lattice mismatch on gate lag in high quality InAlN/AlN/GaN HFET structures JH Leach, M Wu, X Ni, X Li, Ü Özgür, H Morkoç physica status solidi (a) 207 (1), 211-216, 2010 | 35 | 2010 |
| Low-Frequency Noise Measurements of AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors With HfAlO Gate Dielectric C Kayis, JH Leach, CY Zhu, M Wu, X Li, U Ozgur, H Morkoc, X Yang, ... IEEE Electron Device Letters 31 (9), 1041-1043, 2010 | 33 | 2010 |
| Influences of Al doping concentration on structural, electrical and optical properties of Zn0. 95Ni0. 05O powders G Pei, F Wu, C Xia, J Zhang, X Li, J Xu Current Applied Physics 8 (1), 18-23, 2008 | 32 | 2008 |
| InGaN based light emitting diodes with Ga doped ZnO as transparent conducting oxide X Li, HY Liu, S Liu, X Ni, M Wu, V Avrutin, N Izyumskaya, Ü Özgür, ... physica status solidi (a) 207 (8), 1993-1996, 2010 | 31 | 2010 |
Liu HuiyongПодтвержден адрес электронной почты в домене vcu.edu