Formation of nanodimensional structures on surfaces of GaAs and Si by means of ion implantation SB Donaev, F Djurabekova, DA Tashmukhamedova, BE Umirzakov Physica status solidi (c) 12 (1‐2), 89-93, 2015 | 37 | 2015 |
Effect of Ar+-ion bombardment on the composition and structure of the surface of CoSi2/Si(111) nanofilms SB Donaev, AK Tashatov, BE Umirzakov Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques …, 2015 | 30 | 2015 |
On the creation of ordered nuclei by ion bombardment for obtaining nanoscale si structures on the surface of CaF2 films BE Umirzakov, SB Donaev Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques …, 2017 | 25 | 2017 |
Analysis of the structure and properties of heterostructured nanofilms prepared by epitaxy and ion implantation methods BE Umirzakov, DA Tashmukhamedova, MK Ruzibaeva, AK Tashatov, ... Technical physics 58, 1383-1386, 2013 | 21 | 2013 |
Investigation of change of the composition and structure of the CaF2/Si films surface at the low-energy bombardment BE Umirzakov, DA Tashmukhamedova, MK Ruzibaeva, FG Djurabekova, ... Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2014 | 20 | 2014 |
Electronic structure of Ga1–x Al x As nanostructures grown on the GaAs surface by ion implantation SB Donaev, BE Umirzakov, DA Tashmukhamedova Technical Physics 60, 1563-1566, 2015 | 17 | 2015 |
Исследование структуры и свойств гетероструктурных нанопленок, созданных методами эпитаксии и ионной имплантации БЕ Умирзаков, ДА Ташмухамедова, МК Рузибаева, АК Ташатов, ... Журнал технической физики 83 (9), 146-149, 2013 | 16 | 2013 |
Fabrication of iron pyrite thin films and photovoltaic devices by sulfurization in electrodeposition method Z Lu, H Zhou, C Ye, S Chen, J Ning, MA Halim, SB Donaev, S Wang Nanomaterials 11 (11), 2844, 2021 | 14 | 2021 |
Effect of the O 2 + -ion bombardment on the TiN composition and structure ZA Isakhanov, YE Umirzakov, MK Ruzibaeva, SB Donaev Technical Physics 60, 313-315, 2015 | 14 | 2015 |
Electronic and optical properties of GaAlAs/GaAs thin films BE Umirzakov, SB Donaev, NM Mustafaeva Technical Physics 64, 1506-1508, 2019 | 11 | 2019 |
Emissivity of laser-activated Pd–Ba alloy SB Donaev, BE Umirzakov, NM Mustafaeva Technical Physics 64, 1541-1543, 2019 | 9 | 2019 |
Nucl. Instrum. Methods Phys. Res BE Umirzakov, DA Tashmukhamedova, MK Ruzibaeva, FG Djurabekova, ... Sect. B 326, 322, 2014 | 8 | 2014 |
Effect of implantation of barium and oxygen ions on the emission properties of Mo, Pd, and Pd-Ba S Donaev, KB Kim, E Rabbimov, B Umirzakov, G Shirinov AIP Conference Proceedings 2686 (1), 2022 | 5 | 2022 |
Nanodimensional CoSiO Films Obtained by Ion Implantation on a CoSi2 Surface SB Donaev Technical Physics Letters 46 (8), 796-798, 2020 | 5 | 2020 |
The Morphology and Electronic Properties of Si Nanoscale Structures on a CaF2 Surface BE Umirzakov, RK Ashurov, SB Donaev Technical Physics 64, 232-235, 2019 | 5 | 2019 |
Влияние бомбардировки ионов O ЗА Исаханов, ЮЕ Умирзаков, МК Рузибаева, СБ Донаев Журнал технической физики 85 (2), 2015 | 5 | 2015 |
ВЛИЯНИЕ БОМБАРДИРОВКИ ИОНАМИ Ar+ НА СОСТАВ И СТРУКТУРУ ПОВЕРХНОСТИ НАНОПЛЕНОК CoSi2/Si(111) СБ Донаев, АК Ташатов, БЕ Умирзаков Поверхность. Рентгеновские, синхротронные и нейтронные исследования, 95-95, 2015 | 5 | 2015 |
Модификация поверхности Pd и Pd-Ba ионной бомбардировкой БЕ Умирзаков, СБ Донаев Электронная техника. Серия 1: СВЧ-техника, 65-72, 2014 | 5 | 2014 |
The dependence of the parameters of energy bands on the depth of the ion-doped layer for Si implanted with ions Ba+ S Donaev, N Mustafaeva, A Maksumkhanova, B Shafkarov AIP Conference Proceedings 2686 (1), 2022 | 4 | 2022 |
Effect of the Implantation of Al+ Ions on the Composition, Electronic and Crystalline Structure of the GaP(111) Surface SB Donaev, BE Umirzakov Semiconductors 54, 860-862, 2020 | 4 | 2020 |