Artigos com autorizações de acesso público - Saurabh SantSaiba mais
Disponíveis em algum local: 8
Individual defects in InAs/InGaAsSb/GaSb nanowire tunnel field-effect transistors operating below 60 mV/decade
E Memisevic, M Hellenbrand, E Lind, AR Persson, S Sant, A Schenk, ...
Nano letters 17 (7), 4373-4380, 2017
Autorizações: Knut and Alice Wallenberg Foundation, Swedish Research Council
Facet-selective group-III incorporation in InGaAs template assisted selective epitaxy
M Borg, L Gignac, J Bruley, A Malmgren, S Sant, C Convertino, ...
Nanotechnology 30 (8), 084004, 2018
Autorizações: European Commission
InGaAs-on-insulator FinFETs with reduced off-current and record performance
C Convertino, C Zota, S Sant, F Eltes, M Sousa, D Caimi, A Schenk, ...
2018 IEEE International Electron Devices Meeting (IEDM), 39.2. 1-39.2. 4, 2018
Autorizações: European Commission
Manipulating surface states of III–V nanowires with uniaxial stress
G Signorello, S Sant, N Bologna, M Schraff, U Drechsler, H Schmid, ...
Nano letters 17 (5), 2816-2824, 2017
Autorizações: Swiss National Science Foundation, European Commission
A scaled replacement metal gate InGaAs-on-Insulator n-FinFET on Si with record performance
H Hahn, V Deshpande, E Caruso, S Sant, E O'Connor, Y Baumgartner, ...
2017 IEEE International Electron Devices Meeting (IEDM), 17.5. 1-17.5. 4, 2017
Autorizações: European Commission
Ultra-thin III-V photodetectors epitaxially integrated on si with bandwidth exceeding 25 GHz
S Mauthe, Y Baumgartner, S Sant, Q Ding, M Sousa, L Czornomaz, ...
2020 Optical Fiber Communications Conference and Exhibition (OFC), 1-3, 2020
Autorizações: European Commission
Complementary III-V heterojunction tunnel FETs monolithically integrated on silicon
C Convertino, H Schmid, L Czornomaz, H Riel, S Sant, A Schenk, ...
ECS Transactions 85 (6), 139, 2018
Autorizações: European Commission
III-V heterojunction nanowire tunnel FETs monolithically integrated on silicon
KE Moselund, D Cutaia, H Schmid, M Borg, S Sant, A Schenk, H Riel
2016 IEEE Nanotechnology Materials and Devices Conference (NMDC), 1-2, 2016
Autorizações: European Commission
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