Self-assembled vertical GaN nanorods grown by molecular-beam epitaxy LW Tu, CL Hsiao, TW Chi, I Lo, KY Hsieh
Applied Physics Letters 82 (10), 1601-1603, 2003
157 2003 Generation of electricity in GaN nanorods induced by piezoelectric effect WS Su, YF Chen, CL Hsiao, LW Tu
Applied Physics Letters 90 (6), 2007
133 2007 A free‐standing high‐output power density thermoelectric device based on structure‐ordered PEDOT: PSS Z Li, H Sun, CL Hsiao, Y Yao, Y Xiao, M Shahi, Y Jin, A Cruce, X Liu, ...
Advanced Electronic Materials 4 (2), 1700496, 2018
95 2018 Micro-Raman spectroscopy of a single freestanding GaN nanorod grown by molecular beam epitaxy CL Hsiao, LW Tu, TW Chi, M Chen, TF Young, CT Chia, YM Chang
Applied Physics Letters 90 (4), 2007
90 2007 Specular scattering probability of acoustic phonons in atomically flat interfaces YC Wen, CL Hsieh, KH Lin, HP Chen, SC Chin, CL Hsiao, YT Lin, ...
Physical review letters 103 (26), 264301, 2009
75 2009 Electronic-grade GaN (0001)/Al2O3 (0001) grown by reactive DC-magnetron sputter epitaxy using a liquid Ga target M Junaid, CL Hsiao, J Palisaitis, J Jensen, PO Persson, L Hultman, ...
Applied Physics Letters 98 (14), 2011
69 2011 Self-Induced Core–Shell InAlN Nanorods: Formation and Stability Unraveled by Ab Initio Simulations M Alves Machado Filho, CL Hsiao, RB Dos Santos, L Hultman, J Birch, ...
ACS Nanoscience Au 3 (1), 84-93, 2022
54 2022 Hydrogen in InN: A ubiquitous phenomenon in molecular beam epitaxy grown material V Darakchieva, K Lorenz, NP Barradas, E Alves, B Monemar, M Schubert, ...
Applied Physics Letters 96 (8), 2010
48 2010 Review of GaN thin film and nanorod growth using magnetron sputter epitaxy A Prabaswara, J Birch, M Junaid, EA Serban, L Hultman, CL Hsiao
Applied Sciences 10 (9), 3050, 2020
47 2020 Photoluminescence spectroscopy of nearly defect-free InN microcrystals exhibiting nondegenerate semiconductor behaviors CL Hsiao, HC Hsu, LC Chen, CT Wu, CW Chen, M Chen, LW Tu, ...
Applied Physics Letters 91 (18), 2007
41 2007 Polycrystalline to single-crystalline InN grown on Si (111) substrates by plasma-assisted molecular-beam epitaxy CL Hsiao, LW Tu, M Chen, ZW Jiang, NW Fan, YJ Tu, KR Wang
Japanese journal of applied physics 44 (8L), L1076, 2005
39 2005 Effect of strain on low-loss electron energy loss spectra of group-III nitrides J Palisaitis, CL Hsiao, M Junaid, J Birch, L Hultman, POÅ Persson
Physical Review B—Condensed Matter and Materials Physics 84 (24), 245301, 2011
38 2011 Glancing angle deposition and growth mechanism of inclined AlN nanostructures using reactive magnetron sputtering S Bairagi, K Järrendahl, F Eriksson, L Hultman, J Birch, CL Hsiao
Coatings 10 (8), 768, 2020
35 2020 Energy relaxation of InN thin films DJ Jang, GT Lin, CL Wu, CL Hsiao, LW Tu, ME Lee
Applied Physics Letters 91 (9), 2007
35 2007 Polarization-resolved fine-structure splitting of zero-dimensional In S Amloy, YT Chen, KF Karlsson, KH Chen, HC Hsu, CL Hsiao, LC Chen, ...
Physical Review B—Condensed Matter and Materials Physics 83 (20), 201307, 2011
34 2011 Structural anisotropy of nonpolar and semipolar InN epitaxial layers V Darakchieva, MY Xie, N Franco, F Giuliani, B Nunes, E Alves, CL Hsiao, ...
Journal of Applied Physics 108 (7), 2010
34 2010 High-phase-purity zinc-blende InN on r-plane sapphire substrate with controlled nitridation pretreatment CL Hsiao, TW Liu, CT Wu, HC Hsu, GM Hsu, LC Chen, WY Shiao, ...
Applied Physics Letters 92 (11), 2008
34 2008 Auger recombination in InN thin films DJ Jang, GT Lin, CL Hsiao, LW Tu, ME Lee
Applied Physics Letters 92 (4), 2008
34 2008 Room-temperature heteroepitaxy of single-phase Al1− xInxN films with full composition range on isostructural wurtzite templates CL Hsiao, J Palisaitis, M Junaid, POÅ Persson, J Jensen, QX Zhao, ...
Thin Solid Films 524, 113-120, 2012
32 2012 Electron accumulation at nonpolar and semipolar surfaces of wurtzite InN from generalized infrared ellipsometry V Darakchieva, M Schubert, T Hofmann, B Monemar, CL Hsiao, TW Liu, ...
Applied Physics Letters 95 (20), 2009
32 2009 