Artigos com autorizações de acesso público - Jonathan J. FinleySaiba mais
Não disponíveis em nenhum local: 52
Monolithically integrated high-β nanowire lasers on silicon
B Mayer, L Janker, B Loitsch, J Treu, T Kostenbader, S Lichtmannecker, ...
Nano letters 16 (1), 152-156, 2016
Autorizações: German Research Foundation
Direct observation of a noncatalytic growth regime for GaAs nanowires
D Rudolph, S Hertenberger, S Bolte, W Paosangthong, D Spirkoska, ...
Nano Letters 11 (9), 3848-3854, 2011
Autorizações: German Research Foundation
Spontaneous alloy composition ordering in GaAs-AlGaAs core–shell nanowires
D Rudolph, S Funk, M Döblinger, S Morkötter, S Hertenberger, ...
Nano letters 13 (4), 1522-1527, 2013
Autorizações: German Research Foundation
Enhanced luminescence properties of InAs–InAsP core–shell nanowires
J Treu, M Bormann, H Schmeiduch, M Döblinger, S Morkötter, ...
Nano letters 13 (12), 6070-6077, 2013
Autorizações: German Research Foundation
GaAs–AlGaAs core–shell nanowire lasers on silicon: invited review
G Koblmüller, B Mayer, T Stettner, G Abstreiter, JJ Finley
Semiconductor Science and Technology 32 (5), 053001, 2017
Autorizações: German Research Foundation
Absence of vapor-liquid-solid growth during molecular beam epitaxy of self-induced InAs nanowires on Si
S Hertenberger, D Rudolph, S Bolte, M Döblinger, M Bichler, D Spirkoska, ...
Applied Physics Letters 98 (12), 2011
Autorizações: German Research Foundation
Alloy fluctuations act as quantum dot-like emitters in GaAs-AlGaAs core–shell nanowires
N Jeon, B Loitsch, S Morkoetter, G Abstreiter, J Finley, HJ Krenner, ...
ACS nano 9 (8), 8335-8343, 2015
Autorizações: German Research Foundation
Coaxial GaAs-AlGaAs core-multishell nanowire lasers with epitaxial gain control
T Stettner, P Zimmermann, B Loitsch, M Döblinger, A Regler, B Mayer, ...
Applied Physics Letters 108 (1), 2016
Autorizações: German Research Foundation
Demonstration of confined electron gas and steep-slope behavior in delta-doped GaAs-AlGaAs core–shell nanowire transistors
S Morkötter, N Jeon, D Rudolph, B Loitsch, D Spirkoska, E Hoffmann, ...
Nano letters 15 (5), 3295-3302, 2015
Autorizações: German Research Foundation
High mobility one-and two-dimensional electron systems in nanowire-based quantum heterostructures
S Funk, M Royo, I Zardo, D Rudolph, S Morkötter, B Mayer, J Becker, ...
Nano letters 13 (12), 6189-6196, 2013
Autorizações: German Research Foundation, Government of Spain, Government of Italy
Crystal phase quantum dots in the ultrathin core of GaAs–AlGaAs core–shell nanowires
B Loitsch, J Winnerl, G Grimaldi, J Wierzbowski, D Rudolph, S Morkötter, ...
Nano letters 15 (11), 7544-7551, 2015
Autorizações: German Research Foundation
Role of microstructure on optical properties in high-uniformity InGaAs nanowire arrays: Evidence of a wider wurtzite band gap
S Morkötter, S Funk, M Liang, M Döblinger, S Hertenberger, J Treu, ...
Physical Review B—Condensed Matter and Materials Physics 87 (20), 205303, 2013
Autorizações: German Research Foundation
Rate-limiting mechanisms in high-temperature growth of catalyst-free InAs nanowires with large thermal stability
S Hertenberger, D Rudolph, J Becker, M Bichler, JJ Finley, G Abstreiter, ...
Nanotechnology 23 (23), 235602, 2012
Autorizações: German Research Foundation
Gate-Switchable Arrays of Quantum Light Emitters in Contacted Monolayer MoS2 van der Waals Heterodevices
A Hötger, J Klein, K Barthelmi, L Sigl, F Sigger, W Manner, S Gyger, ...
Nano Letters 21 (2), 1040-1046, 2021
Autorizações: German Research Foundation, Swedish Research Council, European Commission …
Tuning lasing emission toward long wavelengths in GaAs-(In, Al) GaAs core–multishell nanowires
T Stettner, A Thurn, M Döblinger, MO Hill, J Bissinger, P Schmiedeke, ...
Nano letters 18 (10), 6292-6300, 2018
Autorizações: US National Science Foundation, US Department of Defense, German Research …
Direct coupling of coherent emission from site-selectively grown III–V nanowire lasers into proximal silicon waveguides
T Stettner, T Kostenbader, D Ruhstorfer, J Bissinger, H Riedl, M Kaniber, ...
Acs Photonics 4 (10), 2537-2543, 2017
Autorizações: German Research Foundation
Effect of interwire separation on growth kinetics and properties of site-selective GaAs nanowires
D Rudolph, L Schweickert, S Morkötter, B Loitsch, S Hertenberger, ...
Applied physics letters 105 (3), 2014
Autorizações: German Research Foundation
Observation of an electrically tunable exciton g factor in InGaAs/GaAs quantum dots
F Klotz, V Jovanov, J Kierig, EC Clark, D Rudolph, D Heiss, M Bichler, ...
Applied Physics Letters 96 (5), 2010
Autorizações: German Research Foundation
Toward plasmonic tunnel gaps for nanoscale photoemission currents by on-chip laser ablation
P Zimmermann, A Hotger, N Fernandez, A Nolinder, K Muller, JJ Finley, ...
Nano letters 19 (2), 1172-1178, 2019
Autorizações: German Research Foundation
Widely tunable alloy composition and crystal structure in catalyst-free InGaAs nanowire arrays grown by selective area molecular beam epitaxy
J Treu, M Speckbacher, K Saller, S Morkötter, M Döblinger, X Xu, H Riedl, ...
Applied Physics Letters 108 (5), 2016
Autorizações: German Research Foundation
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