| Stabilizing the ferroelectric phase in doped hafnium oxide M Hoffmann, U Schroeder, T Schenk, T Shimizu, H Funakubo, O Sakata, ... Journal of Applied Physics 118 (7), 072006, 2015 | 597 | 2015 |
| Unveiling the double-well energy landscape in a ferroelectric layer M Hoffmann, FPG Fengler, M Herzig, T Mittmann, B Max, U Schroeder, ... Nature, 2019 | 412 | 2019 |
| Next Generation ferroelectric materials for semiconductor process integration and their applications T Mikolajick, S Slesazeck, H Mulaosmanovic, MH Park, S Fichtner, ... Journal of Applied Physics, 2021 | 349 | 2021 |
| Lanthanum doped hafnium oxide: a robust ferroelectric material U Schroeder, C Richter, MH Park, T Schenk, M Pesic, M Hoffmann, ... Inorganic Chemistry, 2018 | 346 | 2018 |
| Direct Observation of Negative Capacitance in Polycrystalline Ferroelectric HfO2 M Hoffmann, M Pešić, K Chatterjee, AI Khan, S Salahuddin, S Slesazeck, ... Advanced Functional Materials 26 (47), 8643-8649, 2016 | 297 | 2016 |
| Complex internal bias fields in ferroelectric hafnium oxide T Schenk, M Hoffmann, J Ocker, M Pesic, T Mikolajick, U Schroeder ACS applied materials & interfaces 7 (36), 20224-20233, 2015 | 268 | 2015 |
| Ferroelectric phase transitions in nanoscale HfO 2 films enable giant pyroelectric energy conversion and highly efficient supercapacitors M Hoffmann, U Schroeder, C Künneth, A Kersch, S Starschich, U Böttger, ... Nano Energy 18, 154-164, 2015 | 238 | 2015 |
| Nonvolatile Random Access Memory and Energy Storage Based on Antiferroelectric Like Hysteresis in ZrO2 M Pešić, M Hoffmann, C Richter, T Mikolajick, U Schroeder Advanced Functional Materials 26 (41), 7486-7494, 2016 | 228 | 2016 |
| Ferroelectricity in doped hafnium oxide: materials, properties and devices U Schroeder, CS Hwang, H Funakubo Woodhead Publishing, 2019 | 176 | 2019 |
| On the Stabilization of Ferroelectric Negative Capacitance in Nanoscale Devices M Hoffmann, M Pesic, S Slesazeck, U Schroeder, T Mikolajick Nanoscale, 2018 | 154 | 2018 |
| Hafnia-based Double Layer Ferroelectric Tunnel Junctions as Artificial Synapses for Neuromorphic Computing B Max, M Hoffmann, H Mulaosmanovic, S Slesazeck, T Mikolajick ACS Applied Electronic Materials, 2020 | 138 | 2020 |
| Progress and future prospects of negative capacitance electronics: A materials perspective M Hoffmann, S Slesazeck, T Mikolajick APL Materials, 2021 | 135 | 2021 |
| Demonstration of High-speed Hysteresis-free Negative Capacitance in Ferroelectric Hf0.5Zr0.5O2 M Hoffmann, B Max, T Mittmann, U Schroeder, S Slesazeck, T Mikolajick International Electron Devices Meeting (IEDM) 2018, 727-730, 2018 | 126 | 2018 |
| Direct Correlation of Ferroelectric Properties and Memory Characteristics in Ferroelectric Tunnel Junctions B Max, M Hoffmann, S Slesazeck, T Mikolajick Journal of the Electron Devices Society, 2019 | 113 | 2019 |
| On the relationship between field cycling and imprint in ferroelectric Hf0.5Zr0.5O2 FPG Fengler, M Hoffmann, S Slesazeck, T Mikolajick, U Schroeder Journal of Applied Physics, 2018 | 106 | 2018 |
| Origin of temperature-dependent ferroelectricity in Si-doped HfO2 MH Park, CC Chung, T Schenk, C Richter, M Hoffmann, S Wirth, JL Jones, ... Advanced Electronic Materials 4, 1700489, 2018 | 96 | 2018 |
| Bulk depolarization fields as a major contributor to the ferroelectric reliability performance in Lanthanum doped Hf0.5Zr0.5O2 capacitors F Mehmood, M Hoffmann, PD Lomenzo, C Richter, M Materano, ... Advanced Materials Interfaces, 2019 | 94 | 2019 |
| Effect of Acceptor Doping on Phase Transitions of HfO2 Thin Films for Energy-Related Applications MH Park, T Schenk, M Hoffmann, S Knebel, J Gärtner, T Mikolajick, ... Nano Energy, 2017 | 94 | 2017 |
| Involvement of Unsaturated Switching in the Endurance Cycling of Si‐doped HfO2 Ferroelectric Thin Films S Li, D Zhou, Z Shi, M Hoffmann, T Mikolajick, U Schroeder Advanced Electronic Materials, 2000264, 2020 | 90 | 2020 |
| Computing with Ferroelectric FETs: Devices, Models, Systems, and Applications A Aziz, ET Breyer, A Chen, X Chen, S Datta, SK Gupta, M Hoffmann, ... DATE conference 2018, 2018 | 90 | 2018 |
Thomas MikolajickScientific Director, NaMLab GmbH and Professor for Nanoelectronics, TU DresdenEmail confirmado em namlab.com