Artigos com autorizações de acesso público - Young Joon HongSaiba mais
Disponíveis em algum local: 17
Vertical full-colour micro-LEDs via 2D materials-based layer transfer
J Shin, H Kim, S Sundaram, J Jeong, BI Park, CS Chang, J Choi, T Kim, ...
Nature 614 (7946), 81-87, 2023
Autorizações: US National Science Foundation, US Department of Energy, US Department of …
Remote heteroepitaxy of GaN microrod heterostructures for deformable light-emitting diodes and wafer recycle
J Jeong, Q Wang, J Cha, DK Jin, DH Shin, S Kwon, BK Kang, JH Jang, ...
Science Advances 6 (23), eaaz5180, 2020
Autorizações: US Department of Energy
Remote epitaxy
H Kim, CS Chang, S Lee, J Jiang, J Jeong, M Park, Y Meng, J Ji, Y Kwon, ...
Nature Reviews Methods Primers 2 (1), 40, 2022
Autorizações: US Department of Energy, US Department of Defense
Architectured van der Waals epitaxy of ZnO nanostructures on hexagonal BN
H Oh, YJ Hong, KS Kim, S Yoon, H Baek, SH Kang, YK Kwon, M Kim, ...
NPG Asia Materials 6, e145, 2014
Autorizações: National Natural Science Foundation of China
Remote homoepitaxy of ZnO microrods across graphene layers
J Jeong, KA Min, DH Shin, J Yoo, WS Yang, SW Lee, S Hong, YJ Hong
Nanoscale 10 (48), 22970–22980, 2018
Autorizações: US Department of Energy
Remote heteroepitaxy across graphene: Hydrothermal growth of vertical ZnO microrods on graphene-coated GaN substrate
J Jeong, KA Min, BK Kang, DH Shin, J Yoo, WS Yang, SW Lee, S Hong, ...
Applied Physics Letters 113 (23), 233103, 2018
Autorizações: US Department of Energy
Remote epitaxial interaction through graphene
CS Chang, KS Kim, BI Park, J Choi, H Kim, J Jeong, M Barone, N Parker, ...
Science Advances 94 (2), adj5379, 2023
Autorizações: US National Science Foundation, US Department of Defense, US Office of the …
Selective-area remote epitaxy of ZnO microrods using multilayer–monolayer-patterned graphene for transferable and flexible device fabrications
J Jeong, DK Jin, J Cha, BK Kang, Q Wang, J Choi, SW Lee, ...
ACS Applied Nano Materials 3 (9), 8920–8930, 2020
Autorizações: US Department of Energy
Emission color-tuned light-emitting diode microarrays of nonpolar InxGa1–xN/GaN multishell nanotube heterostructures
YJ Hong, CH Lee, J Yoo, YJ Kim, J Jeong, M Kim, GC Yi
Scientific Reports 5, 18020, 2015
Autorizações: US Department of Energy
Fabrication of a Microcavity Prepared by Remote Epitaxy over Monolayer Molybdenum Disulfide
Y Kim, J Watt, X Ma, T Ahmed, S Kim, K Kang, TS Luk, YJ Hong, J Yoo
ACS nano 16 (2), 2399–2406, 2022
Autorizações: US Department of Energy
Enhanced nucleation of germanium on graphene via dipole engineering
J Yoo, T Ahmed, R Chen, A Chen, YH Kim, KC Kwon, CW Park, HS Kang, ...
Nanoscale 10 (12), 5689, 2018
Autorizações: US Department of Energy
Crystal-phase intergradation in InAs nanostructures grown by van der Waals heteroepitaxy on graphene
JE Choi, J Yoo, D Lee, YJ Hong, T Fukui
Applied Physics Letters 112 (14), 142101, 2018
Autorizações: US Department of Energy
Single crystalline ZnO radial homojunction light-emitting diodes fabricated by metalorganic chemical vapour deposition
J Yoo, T Ahmed, W Tang, YJ Kim, YJ Hong, CH Lee, GC Yi
Nanotechnology 28 (39), 394001, 2017
Autorizações: US Department of Energy
Facet-selective morphology-controlled remote epitaxy of ZnO microcrystals via wet chemical synthesis
J Choi, DK Jin, J Jeong, BK Kang, WS Yang, A Ali, J Yoo, MJ Kim, GC Yi, ...
Scientific reports 11, 22697, 2021
Autorizações: US Department of Energy
Exceptional thermochemical stability of graphene on N-polar GaN for remote epitaxy
J Choi, J Jeong, J Kim, X Zhu, BK Kang, Q Wang, BI Park, J Kim, H Kim, ...
ACS Nano 17 (21), 21678-21689, 2023
Autorizações: US Department of Energy
Low barrier height in z ZnO nanorods/NbSe2 heterostructure prepared by van der Waals epitaxy
Y Kim, R Tutchton, R Liu, S Krylyuk, JX Zhu, AV Davydov, YJ Hong, J Yoo
APL Materials 9 (9), 091107, 2021
Autorizações: US Department of Energy
Area-selective deposition of germanium on patterned graphene/monolayer molybdenum disulfide stacks via dipole engineering
JY Y.Lee, T.Ahmed, X.Wang, M.T.Pettes, Y.Kim, J.Park, W.-S.Yang, K.Kang, Y.J ...
APL Materials 12, 031103, 2024
Autorizações: US Department of Energy
As informações de publicação e financiamento são determinadas automaticamente por um programa informático.