Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N-and Ga-face AlGaN/GaN heterostructures O Ambacher, J Smart, JR Shealy, NG Weimann, K Chu, M Murphy, ...
Journal of applied physics 85 (6), 3222-3233, 1999
3797 1999 Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures O Ambacher, B Foutz, J Smart, JR Shealy, NG Weimann, K Chu, ...
Journal of applied physics 87 (1), 334-344, 2000
2182 2000 Scattering of electrons at threading dislocations in GaN NG Weimann, LF Eastman, D Doppalapudi, HM Ng, TD Moustakas
Journal of Applied Physics 83 (7), 3656-3659, 1998
818 1998 The role of dislocation scattering in n -type GaN films HM Ng, D Doppalapudi, TD Moustakas, NG Weimann, LF Eastman
Applied physics letters 73 (6), 821-823, 1998
562 1998 Undoped AlGaN/GaN HEMTs for microwave power amplification LF Eastman, V Tilak, J Smart, BM Green, EM Chumbes, R Dimitrov, H Kim, ...
IEEE Transactions on Electron Devices 48 (3), 479-485, 2001
475 2001 Monlithically coupled waveguide and phototransistor YK Chen, VE Houtsma, AB Leven, NG Weimann
US Patent 7,471,855, 2008
255 2008 GaN nanotip pyramids formed by anisotropic etching HM Ng, NG Weimann, A Chowdhury
Journal of applied physics 94 (1), 650-653, 2003
230 2003 Second-harmonic generation in periodically poled GaN A Chowdhury, HM Ng, M Bhardwaj, NG Weimann
Applied physics letters 83 (6), 1077-1079, 2003
211 2003 Role of spontaneous and piezoelectric polarization induced effects in Group‐III nitride based heterostructures and devices O Ambacher, R Dimitrov, M Stutzmann, BE Foutz, MJ Murphy, JA Smart, ...
physica status solidi (b) 216 (1), 381-389, 1999
210 1999 AlGaN/GaN heterostructures on insulating AlGaN nucleation layers JA Smart, AT Schremer, NG Weimann, O Ambacher, LF Eastman, ...
Applied physics letters 75 (3), 388-390, 1999
115 1999 High mobility AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy on semi-insulating GaN templates prepared by hydride vapor phase epitaxy MJ Manfra, NG Weimann, JWP Hsu, LN Pfeiffer, KW West, S Syed, ...
Journal of applied physics 92 (1), 338-345, 2002
109 2002 SiGe differential transimpedance amplifier with 50-GHz bandwidth JS Weiner, A Leven, V Houtsma, Y Baeyens, YK Chen, P Paschke, ...
IEEE Journal of Solid-State Circuits 38 (9), 1512-1517, 2003
99 2003 Patterning GaN microstructures by polarity-selective chemical etching HM Ng, W Parz, NG Weimann, A Chowdhury
Japanese Journal of Applied Physics 42 (12A), L1405, 2003
74 2003 Compact InP-based HBT VCOs with a wide tuning range at W-and D-band Y Baeyens, C Dorschky, N Weimann, Q Lee, R Kopf, G Georgiou, ...
IEEE Transactions on Microwave Theory and Techniques 48 (12), 2403-2408, 2000
73 2000 Impact of Si doping on radio frequency dispersion in unpassivated GaN/AlGaN/GaN high-electron-mobility transistors grown by plasma-assisted molecular-beam epitaxy O Mitrofanov, M Manfra, N Weimann
Applied physics letters 82 (24), 4361-4363, 2003
71 2003 An InGaAs-InP HBT differential transimpedance amplifier with 47-GHz bandwidth JS Weiner, JS Lee, A Leven, Y Baeyens, V Houtsma, G Georgiou, Y Yang, ...
IEEE journal of solid-state circuits 39 (10), 1720-1723, 2004
60 2004 High-reflectivity ultraviolet AlGaN∕ AlGaN distributed Bragg reflectors O Mitrofanov, S Schmult, MJ Manfra, T Siegrist, NG Weimann, AM Sergent, ...
Applied physics letters 88 (17), 2006
59 2006 Dislocation and morphology control during molecular-beam epitaxy of AlGaN/GaN heterostructures directly on sapphire substrates MJ Manfra, NG Weimann, JWP Hsu, LN Pfeiffer, KW West, SNG Chu
Applied physics letters 81 (8), 1456-1458, 2002
56 2002 Toward mobile integrated electronic systems at THz frequencies P Hillger, M van Delden, USM Thanthrige, AM Ahmed, J Wittemeier, ...
Journal of Infrared, Millimeter, and Terahertz Waves 41 (7), 846-869, 2020
51 2020 Smooth and vertical-sidewall InP etching using J Lin, A Leven, NG Weimann, Y Yang, RF Kopf, R Reyes, YK Chen, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2004
51 2004 