Modeling inductive switching characteristics of high-speed buffer layer IGBT P Xue, G Fu, D Zhang
IEEE Transactions on Power Electronics 32 (4), 3075-3087, 2016
48 2016 Investigation on the short-circuit oscillation of cascode GaN HEMTs P Xue, L Maresca, M Riccio, G Breglio, A Irace
IEEE Transactions on Power Electronics 35 (6), 6292-6300, 2019
33 2019 Experimental study on the short-circuit instability of cascode GaN HEMTs P Xue, L Maresca, M Riccio, G Breglio, A Irace
IEEE Transactions on Electron Devices 67 (4), 1686-1692, 2020
25 2020 Self-sustained turn-OFF oscillation of cascode GaN HEMTs: Occurrence mechanism, instability analysis, and oscillation suppression P Xue, F Iannuzzo
IEEE Transactions on Power Electronics 37 (5), 5491-5500, 2021
21 2021 Analysis on the self-sustained oscillation of SiC MOSFET body diode P Xue, L Maresca, M Riccio, G Breglio, A Irace
IEEE Transactions on Electron Devices 66 (10), 4287-4295, 2019
21 2019 A comprehensive investigation on short-circuit oscillation of p-GaN HEMTs P Xue, L Maresca, M Riccio, G Breglio, A Irace
IEEE Transactions on Electron Devices 67 (11), 4849-4857, 2020
20 2020 Multivariate storage degradation modeling based on copula function L Xiaogang, X Peng
Advances in Mechanical Engineering 6, 503407, 2014
17 2014 Investigation on intermittent life testing program for IGBT Y Cheng, G Fu, M Jiang, P Xue
Journal of Power Electronics 17 (3), 811-820, 2017
16 2017 Failure analysis of solder layer in power transistor M Jiang, G Fu, B Wan, P Xue, Y Qiu, Y Li
Soldering & Surface Mount Technology 30 (1), 49-56, 2018
15 2018 Application-oriented reliability testing of power electronic components and converters H Wang, F Iannuzzo, AS Bahman, K Zhang, P Xue, Y Zhang, B Yao, ...
IEEE Power Electronics Magazine 9 (4), 22-31, 2023
13 2023 Self-sustained turn-off oscillation of SiC MOSFETs: Origin, instability analysis, and prevention P Xue, L Maresca, M Riccio, G Breglio, A Irace
Energies 12 (11), 2211, 2019
12 2019 Investigation on the self-sustained oscillation of superjunction MOSFET intrinsic diode P Xue, L Maresca, M Riccio, G Breglio, A Irace
IEEE Transactions on Electron Devices 66 (1), 605-612, 2018
12 2018 A Temperature-Dependent dVCE /dt Model for Field-Stop IGBT at Turn-Off Transient P Xue, P Davari
IEEE Journal of Emerging and Selected Topics in Power Electronics 11 (3 …, 2023
11 2023 An excess carrier lifetime extraction method for physics-based IGBT models G Fu, P Xue
Journal of Power Electronics 16 (2), 778-785, 2016
9 2016 Prediction of the electrochemical migration induced failure on power PCBs under humidity condition—A case study P Xue, AS Bahman, F Iannuzzo, HC Gudla, AR Lakkaraju, R Ambat
Microelectronics Reliability 139, 114796, 2022
8 2022 Comprehensive physics-based compact model for fast pin diode using MATLAB and Simulink P Xue, G Fu, D Zhang
Solid-State Electronics 121, 1-11, 2016
8 2016 The trade-off of switching losses and EMI generation for SiC MOSFET with common source and Kelvin source configurations P Xue, P Davari
2023 25th European Conference on Power Electronics and Applications (EPE'23 …, 2023
6 2023 A Temperature-Dependent P Xue, P Davari
IEEE Transactions on Power Electronics 38 (6), 7128-7141, 2023
6 2023 Low inductive characterization of fast-switching SiC MOSFETs and active gate driver units DA Philipps, P Xue, TN Ubostad, F Iannuzzo, D Peftitsis
IEEE Transactions on Industry Applications 59 (5), 6384-6398, 2023
5 2023 Ferrite beads design to improve turn-off characteristics of cascode GaN HEMTs: an optimum design method P Xue, F Iannuzzo
IEEE Journal of Emerging and Selected Topics in Power Electronics 11 (3 …, 2023
4 2023