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Udayan Ganguly
Udayan Ganguly
Professor, Electrical Engineering, IIT Bombay
Email confirmado em ee.iitb.ac.in - Página inicial
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Apparatus and Methods for Cyclical Oxidation and Etching
U Ganguly, JM Ranish, AM Hunter, J Tang, CS Olsen, MD Scotney-Castle, ...
US Patent App. 12/720,957, 2011
7762011
Leaky integrate and fire neuron by charge-discharge dynamics in floating-body MOSFET
S Dutta, V Kumar, A Shukla, NR Mohapatra, U Ganguly
Scientific reports 7 (1), 8257, 2017
2262017
Apparatus and Methods for Cyclical Oxidation and Etching
U Ganguly, JM Ranish, AM Hunter, J Tang, CS Olsen, MD Scotney-Castle, ...
US Patent App. 12/720,942, 2011
2142011
Semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof
U Ganguly, Y Yokota, J Tang, S Thirupapuliyur, CS Olsen, S Sun, ...
US Patent 8,871,645, 2014
2012014
PCMO RRAM for integrate-and-fire neuron in spiking neural networks
S Lashkare, S Chouhan, T Chavan, A Bhat, P Kumbhare, U Ganguly
IEEE Electron Device Letters 39 (4), 484-487, 2018
1432018
Fermi-level unpinning and low resistivity in contacts to n-type Ge with a thin ZnO interfacial layer
P Paramahans Manik, R Kesh Mishra, V Pavan Kishore, P Ray, A Nainani, ...
Applied Physics Letters 101 (18), 2012
1352012
Punchthrough-diode-based bipolar RRAM selector by Si epitaxy
VSS Srinivasan, S Chopra, P Karkare, P Bafna, S Lashkare, P Kumbhare, ...
IEEE Electron Device Letters 33 (10), 1396-1398, 2012
1162012
Design optimization of metal nanocrystal memory—Part I: Nanocrystal array engineering
TH Hou, C Lee, V Narayanan, U Ganguly, EC Kan
IEEE transactions on electron devices 53 (12), 3095-3102, 2006
942006
Arbitrary spike time dependent plasticity (STDP) in memristor by analog waveform engineering
N Panwar, B Rajendran, U Ganguly
IEEE Electron Device Letters 38 (6), 740-743, 2017
702017
Nanotube-and nanocrystal-based non-volatile memory
Y Zhang, U Ganguly, E Kan
US Patent 7,262,991, 2007
702007
Carbon nanotube-based nonvolatile memory with charge storage in metal nanocrystals
U Ganguly, EC Kan, Y Zhang
Applied Physics Letters 87 (4), 2005
582005
Asymmetric electric field enhancement in nanocrystal memories
C Lee, U Ganguly, V Narayanan, TH Hou, J Kim, EC Kan
IEEE electron device letters 26 (12), 879-881, 2005
562005
PCMO-based RRAM and NPN bipolar selector as synapse for energy efficient STDP
S Lashkare, N Panwar, P Kumbhare, B Das, U Ganguly
IEEE Electron Device Letters 38 (9), 1212-1215, 2017
532017
Band gap bowing and band offsets in relaxed and strained Si1− xGex alloys by employing a new nonlinear interpolation scheme
S Sant, S Lodha, U Ganguly, S Mahapatra, FO Heinz, L Smith, V Moroz, ...
Journal of Applied Physics 113 (3), 2013
492013
Band-to-band tunneling based ultra-energy-efficient silicon neuron
T Chavan, S Dutta, NR Mohapatra, U Ganguly
IEEE Transactions on Electron Devices 67 (6), 2614-2620, 2020
472020
Threshold voltage variability in nanosheet GAA transistors
PH Vardhan, S Ganguly, U Ganguly
IEEE Transactions on Electron Devices 66 (10), 4433-4438, 2019
472019
Ultra-low energy LIF neuron using Si NIPIN diode for spiking neural networks
B Das, J Schulze, U Ganguly
IEEE Electron Device Letters 39 (12), 1832-1835, 2018
442018
Effect of SiN on performance and reliability of charge trap flash (CTF) under Fowler–Nordheim tunneling program/erase operation
C Sandhya, U Ganguly, N Chattar, C Olsen, SM Seutter, L Date, R Hung, ...
IEEE electron device letters 30 (2), 171-173, 2008
412008
Modification of charge trap silicon nitride with oxygen plasma
CS Olsen, TW Poon, U Ganguly, J Swenberg
US Patent 8,198,671, 2012
402012
Design optimization of metal nanocrystal memory—Part II: Gate-stack engineering
TH Hou, C Lee, V Narayanan, U Ganguly, EC Kan
IEEE transactions on electron devices 53 (12), 3103-3109, 2006
392006
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