Mike Krames

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Jonathan J. Wierer, Jr.North Carolina State University, Department of Electrical and Computer EngineeringEmail confirmado em ncsu.edu
Troy TrottierUniversity of Florida, Motorola, Hewlett-Packard, Lumileds, Phillips, Soraa, SLDEmail confirmado em kyocera-sldlaser.com
Aurelien DavidGoogleEmail confirmado em polytechnique.org
Arto NurmikkoProfessor of Engineering and Physics, Brown UniversityEmail confirmado em brown.edu
Christopher KocotDirector, Finisar CorporationEmail confirmado em finisar.com
Yoon-Kyu SongSeoul National UniversityEmail confirmado em snu.ac.kr
Mihail SigalasProfessor, Department of Materials Science, University of PatrasEmail confirmado em upatras.gr
Andrew Y. KimLumiledsEmail confirmado em alum.mit.edu
Michael CichRaxiumEmail confirmado em raxium.com
Marie Anne Van De HaarSeaborough Research B.V.Email confirmado em seaborough.com
Eleni MakaronaInstitute of Nanoscience and NanotechnologyEmail confirmado em inn.demokritos.gr
Jung HanWilliam Norton Professor of Electrical Engineering, Yale UniversityEmail confirmado em yale.edu
Anne BerendsSeaborough ResearchEmail confirmado em sunled.health
Kevin HouserOregon State UniversityEmail confirmado em oregonstate.edu
Christophe HurniFacebookEmail confirmado em engr.ucsb.edu
Thomas M KatonaCalifornia Polytechnic State UniversityEmail confirmado em calpoly.edu
Minchen WeiThe Hong Kong Polytechnic UniversityEmail confirmado em polyu.edu.hk
Jörg MeyerProfessor, Hochschule Hamm-LippstadtEmail confirmado em hshl.de
Jerry SimmonsSandia National LaboratoriesEmail confirmado em sandia.gov
Rajat SharmaStudent, Technical University of MunichEmail confirmado em tum.de

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Mike Krames

Arkesso, LLC; ORCID 0000-0001-8545-851X

Email confirmado em arkesso.com - Página inicial

semiconductors light emitting diodes lasers lighting displays


Título Ordenar por citações Ordenar por ano Ordenar por título	Citado por Citado por	Ano
Status and future of high-power light-emitting diodes for solid-state lighting MR Krames, OB Shchekin, R Mueller-Mach, GO Mueller, L Zhou, ... Journal of display technology 3 (2), 160-175, 2007	2501	2007
Auger recombination in InGaN measured by photoluminescence YC Shen, GO Mueller, S Watanabe, NF Gardner, A Munkholm, ... Applied Physics Letters 91 (14), 2007	1437	2007
High-power AlGaInN flip-chip light-emitting diodes JJ Wierer, DA Steigerwald, MR Krames, JJ O’shea, MJ Ludowise, ... Applied Physics Letters 78 (22), 3379-3381, 2001	885	2001
Highly efficient all‐nitride phosphor‐converted white light emitting diode R Mueller‐Mach, G Mueller, MR Krames, HA Höppe, F Stadler, W Schnick, ... physica status solidi (a) 202 (9), 1727-1732, 2005	686	2005
High-power phosphor-converted light-emitting diodes based on III-nitrides R Mueller-Mach, GO Mueller, MR Krames, T Trottier IEEE Journal of Selected Topics in Quantum Electronics 8 (2), 339-345, 2002	678	2002
High-power truncated-inverted-pyramid light-emitting diodes exhibiting % external quantum efficiency MR Krames, M Ochiai-Holcomb, GE Höfler, C Carter-Coman, EI Chen, ... Applied physics letters 75 (16), 2365-2367, 1999	662	1999
Blue-emitting InGaN–GaN double-heterostructure light-emitting diodes reaching maximum quantum efficiency above 200A∕ cm2 NF Gardner, GO Müller, YC Shen, G Chen, S Watanabe, W Götz, ... Applied Physics Letters 91 (24), 2007	562	2007
History of gallium–nitride-based light-emitting diodes for illumination S Nakamura, MR Krames Proceedings of the IEEE 101 (10), 2211-2220, 2013	509	2013
InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal structures JJ Wierer, MR Krames, JE Epler, NF Gardner, MG Craford, JR Wendt, ... Applied Physics Letters 84 (19), 3885-3887, 2004	508	2004
Research challenges to ultra‐efficient inorganic solid‐state lighting JM Phillips, ME Coltrin, MH Crawford, AJ Fischer, MR Krames, ... Laser & Photonics Reviews 1 (4), 307-333, 2007	477	2007
Ordered interface texturing for a light emitting device MR Krames, FA Kish Jr US Patent 5,779,924, 1998	475	1998
Luminescent ceramic for a light emitting device GO Mueller, RB Mueller-Mach, MR Krames, PJ Schmidt, HH Bechtel, ... US Patent 7,361,938, 2008	444*	2008
High performance thin-film flip-chip InGaN–GaN light-emitting diodes OB Shchekin, JE Epler, TA Trottier, T Margalith, DA Steigerwald, ... Applied Physics Letters 89 (7), 2006	442	2006
Phosphor-converted light emitting device WD Collins III, MR Krames, GJ Verhoeckx, NJM Van Leth US Patent 6,642,652, 2003	428	2003
Carrier distribution in (0001) InGaN∕ GaN multiple quantum well light-emitting diodes A David, MJ Grundmann, JF Kaeding, NF Gardner, TG Mihopoulos, ... Applied Physics Letters 92 (5), 2008	426	2008
III-Phospide and III-Arsenide flip chip light-emitting devices MD Camras, DA Steigerwald, FM Steranka, MJ Ludowise, PS Martin, ... US Patent 6,784,463, 2004	400	2004
History, development, and applications of high-brightness visible light-emitting diodes RD Dupuis, MR Krames Journal of lightwave technology 26 (9), 1154-1171, 2008	383	2008
Using electrophoresis to produce a conformally coated phosphor-converted light emitting semiconductor WD Collins III, MR Krames, GJ Verhoeckx, NJM van Leth US Patent 6,576,488, 2003	356	2003
High power LEDs–Technology status and market applications FM Steranka, J Bhat, D Collins, L Cook, MG Craford, R Fletcher, ... physica status solidi (a) 194 (2), 380-388, 2002	326	2002
Polarized semiconductor light emitting device MH Keuper, MR Krames, GO Mueller US Patent 7,408,201, 2008	321	2008

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