Artigos com autorizações de acesso público - Aaron TheanSaiba mais
Não disponíveis em nenhum local: 73
Low-frequency noise analysis and modeling in vertical tunnel FETs with Ge source
FS Neves, PGD Agopian, JA Martino, B Cretu, R Rooyackers, ...
IEEE Transactions on Electron Devices 63 (4), 1658-1665, 2016
Autorizações: Research Foundation (Flanders)
Low Subthreshold Swing and High Mobility Amorphous Indium–Gallium–Zinc-Oxide Thin-Film Transistor With Thin HfO2 Gate Dielectric and Excellent Uniformity
S Samanta, U Chand, S Xu, K Han, Y Wu, C Wang, A Kumar, H Velluri, ...
IEEE Electron Device Letters 41 (6), 856-859, 2020
Autorizações: A*Star, Singapore
Shell-Filling Effects and Coulomb Degeneracy in Planar Quantum Dot Structures
S Nagaraja, P Matagne, VY Thean, JP Leburton, YH Kim, RM Martin
Physical Models for Quantum Dots, 79-101, 2021
Autorizações: US National Science Foundation, US Department of Defense
Three-dimensional self-consistent simulation of the charging time response in silicon nanocrystal flash memories
JS De Sousa, AV Thean, JP Leburton, VN Freire
Physical Models for Quantum Dots, 861-876, 2021
Autorizações: US National Science Foundation
Amorphous IGZO TFTs featuring extremely-scaled channel thickness and 38 nm channel length: Achieving record high Gm, max of 125 μS/μm at VDS of 1 V and ION of 350 μA/μm
S Samanta, K Han, C Sun, C Wang, AVY Thean, X Gong
2020 IEEE Symposium on VLSI Technology, 1-2, 2020
Autorizações: A*Star, Singapore
A wireless multi-channel capacitive sensor system for efficient glove-based gesture recognition with AI at the edge
J Pan, Y Luo, Y Li, CK Tham, CH Heng, AVY Thean
IEEE Transactions on Circuits and Systems II: Express Briefs 67 (9), 1624-1628, 2020
Autorizações: National Research Foundation, Singapore
Strain effect in large silicon nanocrystal quantum dots
A Thean, JP Leburton
Physical Models for Quantum Dots, 835-842, 2021
Autorizações: US National Science Foundation
Hybrid-flexible bimodal sensing wearable glove system for complex hand gesture recognition
J Pan, Y Li, Y Luo, X Zhang, X Wang, DLT Wong, CH Heng, CK Tham, ...
ACS sensors 6 (11), 4156-4166, 2021
Autorizações: National Research Foundation, Singapore
Influence of the source composition on the analog performance parameters of vertical nanowire-TFETs
PGD Agopian, MDV Martino, SD dos Santos, FS Neves, JA Martino, ...
IEEE Transactions on Electron Devices 62 (1), 16-22, 2014
Autorizações: Research Foundation (Flanders)
Stark effect and single-electron charging in silicon nanocrystal quantum dots
A Thean, JP Leburton
Physical Models for Quantum Dots, 815-834, 2021
Autorizações: US National Science Foundation
Characterization of self-heating in high-mobility Ge FinFET pMOS devices
E Bury, B Kaczer, J Mitard, N Collaert, NS Khatami, Z Aksamija, ...
2015 Symposium on VLSI Technology (VLSI Technology), T60-T61, 2015
Autorizações: Research Foundation (Flanders)
Amorphous InGaZnO thin-film transistors with sub-10-nm channel thickness and ultrascaled channel length
S Samanta, K Han, C Sun, C Wang, A Kumar, AVY Thean, X Gong
IEEE Transactions on Electron Devices 68 (3), 1050-1056, 2021
Autorizações: A*Star, Singapore
First demonstration of oxide semiconductor nanowire transistors: A novel digital etch technique, IGZO channel, nanowire width down to~ 20 nm, and I on exceeding 1300 μA/μm
K Han, Q Kong, Y Kang, C Sun, C Wang, J Zhang, H Xu, S Samanta, ...
2021 Symposium on VLSI Technology, 1-2, 2021
Autorizações: A*Star, Singapore
Aerosol Jet Printed WSe2 Crossbar Architecture Device on Kapton With Dual Functionality as Resistive Memory and Photosensor for Flexible System Integration
Y Li, X Feng, M Sivan, JF Leong, B Tang, X Wang, JN Tey, J Wei, KW Ang, ...
IEEE Sensors Journal 20 (9), 4653-4659, 2020
Autorizações: A*Star, Singapore, National Research Foundation, Singapore
Perspective of tunnel-FET for future low-power technology nodes
AS Verhulst, D Verreck, Q Smets, KH Kao, M Van de Put, R Rooyackers, ...
2014 IEEE International Electron Devices Meeting, 30.2. 1-30.2. 4, 2014
Autorizações: Research Foundation (Flanders)
Indium-gallium-zinc-oxide (IGZO) nanowire transistors
K Han, Q Kong, Y Kang, C Sun, C Wang, J Zhang, H Xu, S Samanta, ...
IEEE Transactions on Electron Devices 68 (12), 6610-6616, 2021
Autorizações: A*Star, Singapore
Impact of the effective work function gate metal on the low-frequency noise of gate-all-around silicon-on-insulator NWFETs
W Fang, A Veloso, E Simoen, MJ Cho, N Collaert, A Thean, J Luo, C Zhao, ...
IEEE Electron Device Letters 37 (4), 363-365, 2016
Autorizações: Chinese Academy of Sciences
Analog performance of vertical nanowire TFETs as a function of temperature and transport mechanism
MDV Martino, F Neves, PG Der Agopian, JA Martino, A Vandooren, ...
Solid-State Electronics 112, 51-55, 2015
Autorizações: Research Foundation (Flanders)
Bendable and stretchable microfluidic liquid metal-based filter
W Chen, Y Li, R Li, AVY Thean, YX Guo
IEEE Microwave and Wireless Components Letters 28 (3), 203-205, 2018
Autorizações: National Natural Science Foundation of China
Improved source design for p-type tunnel field-effect transistors: Towards truly complementary logic
D Verreck, AS Verhulst, B Sorée, N Collaert, A Mocuta, A Thean, ...
Applied Physics Letters 105 (24), 2014
Autorizações: Research Foundation (Flanders)
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