| The temperature dependence of the efficiency and threshold current of In1-xGaxAsyP1-y lasers related to intervalence band absorption AR Adams, M Asada, Y Suematsu, S Arai Japanese Journal of Applied Physics 19 (10), L621, 1980 | 290 | 1980 |
| Dynamic single-mode semiconductor lasers with a distributed reflector Y Suematsu, S Arai, K Kishino Journal of Lightwave Technology 1 (1), 161-176, 1983 | 214 | 1983 |
| Direct intensity modulation and wireless data transmission characteristics of terahertz-oscillating resonant tunnelling diodes K Ishigaki, M Shiraishi, S Suzuki, M Asada, N Nishiyama, S Arai Electronics letters 48 (10), 582-583, 2012 | 176 | 2012 |
| The temperature dependence of the threshold current of GaInAsP/InP DH lasers M Asada, A Adams, K Stubkjaer, Y Suematsu, Y Itaya, S Arai IEEE Journal of Quantum Electronics 17 (5), 611-619, 1981 | 169 | 1981 |
| 1.5-1.6 µm GaInAsP/InP dynamic-single-mode (DSM) lasers with distributed Bragg reflector F Koyama, Y Suematsu, S Arai, T Tawee IEEE Journal of Quantum Electronics 19 (6), 1042-1051, 1983 | 140 | 1983 |
| Fabrication of vertical and uniform-size porous InP structure by electrochemical anodization TTT Takizawa, SAS Arai, MNM Nakahara Japanese journal of applied physics 33 (5A), L643, 1994 | 139 | 1994 |
| Light emission from quantum-box structure by current injection Y Miyamoto, M Cao, Y Shingai, K Furuya, Y Suematsu, KG Ravikumar, ... Japanese journal of applied physics 26 (4A), L225, 1987 | 129 | 1987 |
| Oxytocin efficacy is modulated by dosage and oxytocin receptor genotype in young adults with high-functioning autism: a 24-week randomized clinical trial H Kosaka, Y Okamoto, T Munesue, H Yamasue, K Inohara, T Fujioka, ... Translational psychiatry 6 (8), e872-e872, 2016 | 128 | 2016 |
| Wavelength tuning of GaInAsP/InP integrated laser with butt-jointed built-in distributed Bragg reflector Y Tohmori, Y Suematsu, H Tsushima, S Arai Electronics Letters 19 (17), 656-657, 1983 | 117 | 1983 |
| High-performance 1.55-/spl mu/m wavelength GaInAsP-InP distributed-feedback lasers with wirelike active regions N Nunoya, M Nakamura, M Morshed, S Tamura, S Arai IEEE Journal of Selected Topics in Quantum Electronics 7 (2), 249-258, 2001 | 112 | 2001 |
| Lasing characteristics of 1.5 mu m GaInAsP-InP SCH-BIG-DR lasers JI Shim, K Komori, S Arai, I Arima, Y Suematsu, R Somchai IEEE journal of quantum electronics 27 (6), 1736-1745, 1991 | 93 | 1991 |
| Optically pumped membrane BH-DFB lasers for low-threshold and single-mode operation T Okamoto, N Nunoya, Y Onodera, T Yamazaki, S Tamura, S Arai IEEE Journal of selected topics in quantum electronics 9 (5), 1361-1366, 2003 | 89 | 2003 |
| GaInAsP/InP membrane lasers for optical interconnects S Arai, N Nishiyama, T Maruyama, T Okumura IEEE Journal of Selected Topics in Quantum Electronics 17 (5), 1381-1389, 2011 | 80 | 2011 |
| Low threshold current density (100) GaInAsP/InP double-heterostructure lasers for wavelength 1.3 µm Y Itaya, Y Suematsu, S Katayama, K Kishino, S Arai Japanese journal of applied physics 18 (9), 1795, 1979 | 80 | 1979 |
| GaInAsP/InP integrated laser with butt-jointed built-in distributed-Bragg-reflection waveguide Y Abe, K Kishino, Y Suematsu, S Arai Electronics Letters 17 (25-26), 945-947, 1981 | 78 | 1981 |
| Spontaneous recombination, gain and refractive index variation for 1.6 µm wavelength InGaAsP/InP lasers K Stubkjaer, M Asada, S Arai, Y Suematsu Japanese Journal of Applied Physics 20 (8), 1499, 1981 | 74 | 1981 |
| GaInAsP/InP membrane BH-DFB lasers directly bonded on SOI substrate T Maruyama, T Okumura, S Sakamoto, K Miura, Y Nishimoto, S Arai Optics Express 14 (18), 8184-8188, 2006 | 71 | 2006 |
| Reduction of effective linewidth enhancement factor alpha/sub eff/of DFB lasers with complex coupling coefficients K Kudo, JI Shim, K Komori, S Arai IEEE photonics technology letters 4 (6), 531-534, 1992 | 71 | 1992 |
| Directly modulated 1.3 μm quantum dot lasers epitaxially grown on silicon D Inoue, D Jung, J Norman, Y Wan, N Nishiyama, S Arai, AC Gossard, ... Optics express 26 (6), 7022-7033, 2018 | 69 | 2018 |
| 1.11-1.67 µm S Arai, Y Suematsu, Y Itaya IEEE Journal of Quantum Electronics 16 (2), 197-205, 1980 | 67 | 1980 |
Tomohiro AmemiyaAssociate Professor, School of Engineering, Institute of Science TokyoEmail confirmado em m.isct.ac.jp
