Artigos com autorizações de acesso público - Anne S VerhulstSaiba mais
Não disponíveis em nenhum local: 29
Tunnel field-effect transistor without gate-drain overlap
AS Verhulst, WG Vandenberghe, K Maex, G Groeseneken
Applied Physics Letters 91 (5), 2007
Autorizações: Research Foundation (Flanders)
Complementary silicon-based heterostructure tunnel-FETs with high tunnel rates
AS Verhulst, WG Vandenberghe, K Maex, S De Gendt, MM Heyns, ...
IEEE electron device letters 29 (12), 1398-1401, 2008
Autorizações: Research Foundation (Flanders)
Boosting the on-current of a n-channel nanowire tunnel field-effect transistor by source material optimization
AS Verhulst, WG Vandenberghe, K Maex, G Groeseneken
Journal of Applied Physics 104 (6), 2008
Autorizações: Research Foundation (Flanders)
Analytical model for a tunnel field-effect transistor
WG Vandenberghe, AS Verhulst, G Groeseneken, B Soree, W Magnus
MELECON 2008-The 14th IEEE mediterranean electrotechnical conference, 923-928, 2008
Autorizações: Research Foundation (Flanders)
Digital-circuit analysis of short-gate tunnel FETs for low-voltage applications
J Zhuge, AS Verhulst, WG Vandenberghe, W Dehaene, R Huang, Y Wang, ...
Semiconductor Science and Technology 26 (8), 085001, 2011
Autorizações: Research Foundation (Flanders)
A model determining optimal doping concentration and material’s band gap of tunnel field-effect transistors
WG Vandenberghe, AS Verhulst, KH Kao, KD Meyer, B Sorée, W Magnus, ...
Applied Physics Letters 100 (19), 2012
Autorizações: Research Foundation (Flanders)
Calibration of bulk trap-assisted tunneling and Shockley–Read–Hall currents and impact on InGaAs tunnel-FETs
Q Smets, AS Verhulst, E Simoen, D Gundlach, C Richter, N Collaert, ...
IEEE Transactions on Electron Devices 64 (9), 3622-3626, 2017
Autorizações: Research Foundation (Flanders)
Two-dimensional quantum mechanical modeling of band-to-band tunneling in indirect semiconductors
WG Vandenberghe, B Sorée, W Magnus, MV Fischetti, AS Verhulst, ...
2011 international electron devices meeting, 5.3. 1-5.3. 4, 2011
Autorizações: Research Foundation (Flanders)
Perspective of tunnel-FET for future low-power technology nodes
AS Verhulst, D Verreck, Q Smets, KH Kao, M Van de Put, R Rooyackers, ...
2014 IEEE International Electron Devices Meeting, 30.2. 1-30.2. 4, 2014
Autorizações: Research Foundation (Flanders)
Improved source design for p-type tunnel field-effect transistors: Towards truly complementary logic
D Verreck, AS Verhulst, B Sorée, N Collaert, A Mocuta, A Thean, ...
Applied Physics Letters 105 (24), 2014
Autorizações: Research Foundation (Flanders)
Diameter-dependent boron diffusion in silicon nanowire-based transistors
A Schulze, A Florakis, T Hantschel, P Eyben, AS Verhulst, R Rooyackers, ...
Applied Physics Letters 102 (5), 2013
Autorizações: Research Foundation (Flanders)
Quantitative three-dimensional carrier mapping in nanowire-based transistors using scanning spreading resistance microscopy
A Schulze, T Hantschel, P Eyben, AS Verhulst, R Rooyackers, ...
Ultramicroscopy 125, 18-23, 2013
Autorizações: Research Foundation (Flanders)
Optimization of multi-walled carbon nanotube–metal contacts by electrical stressing
PM Ryan, AS Verhulst, D Cott, A Romo-Negreira, T Hantschel, JJ Boland
Nanotechnology 21 (4), 045705, 2009
Autorizações: Research Foundation (Flanders), Science Foundation Ireland
Full-zone spectral envelope function formalism for the optimization of line and point tunnel field-effect transistors
D Verreck, AS Verhulst, M Van de Put, B Sorée, W Magnus, A Mocuta, ...
Journal of Applied Physics 118 (13), 2015
Autorizações: Research Foundation (Flanders)
Tunnel field-effect transistors for future low-power nano-electronics
AS Verhulst, WG Vandenberghe, D Leonelli, R Rooyackers, A Vandooren, ...
ECS Transactions 25 (7), 455, 2009
Autorizações: Research Foundation (Flanders)
Modeling the impact of junction angles in tunnel field-effect transistors
KH Kao, AS Verhulst, WG Vandenberghe, B Sorée, G Groeseneken, ...
Solid-state electronics 69, 31-37, 2012
Autorizações: Research Foundation (Flanders)
Nanoprober-based EBIC measurements for nanowire transistor structures
K Arstila, T Hantschel, A Schulze, A Vandooren, AS Verhulst, ...
Microelectronic engineering 105, 99-102, 2013
Autorizações: Research Foundation (Flanders)
Si-based tunnel field-effect transistors for low-power nano-electronics
AS Verhulst, WG Vandenberghe, D Leonelli, R Rooyackers, A Vandooren, ...
69th Device Research Conference, 193-196, 2011
Autorizações: Research Foundation (Flanders)
Boosting the on-current of Si-based tunnel field-effect transistors
AS Verhulst, WG Vandenberghe, D Leonelli, R Rooyackers, A Vandooren, ...
ECS Transactions 33 (6), 363, 2010
Autorizações: Research Foundation (Flanders)
Non-uniform strain in lattice-mismatched heterostructure tunnel field-effect transistors
D Verreck, AS Verhulst, B Soree, N Collaert, A Mocuta, A Thean, ...
2016 46th European Solid-State Device Research Conference (ESSDERC), 412-415, 2016
Autorizações: Research Foundation (Flanders)
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