Template-assisted selective epitaxy of III–V nanoscale devices for co-planar heterogeneous integration with Si H Schmid, M Borg, K Moselund, L Gignac, CM Breslin, J Bruley, D Cutaia, ...
Applied Physics Letters 106 (23), 2015
270 2015 High‐quality InAs/InSb nanowire heterostructures grown by metal–organic vapor‐phase epitaxy P Caroff, JB Wagner, KA Dick, HA Nilsson, M Jeppsson, K Deppert, ...
Small 4 (7), 878-882, 2008
217 2008 InAs/GaSb heterostructure nanowires for tunnel field-effect transistors BM Borg, KA Dick, B Ganjipour, ME Pistol, LE Wernersson, C Thelander
Nano letters 10 (10), 4080-4085, 2010
194 2010 Controlling the abruptness of axial heterojunctions in III–V nanowires: beyond the reservoir effect KA Dick, J Bolinsson, BM Borg, J Johansson
Nano letters 12 (6), 3200-3206, 2012
187 2012 Vertical III–V nanowire device integration on Si (100) M Borg, H Schmid, KE Moselund, G Signorello, L Gignac, J Bruley, ...
Nano letters 14 (4), 1914-1920, 2014
185 2014 InSb heterostructure nanowires: MOVPE growth under extreme lattice mismatch P Caroff, ME Messing, BM Borg, KA Dick, K Deppert, LE Wernersson
Nanotechnology 20 (49), 495606, 2009
185 2009 Diameter-dependent photocurrent in InAsSb nanowire infrared photodetectors J Svensson, N Anttu, N Vainorius, BM Borg, LE Wernersson
Nano letters 13 (4), 1380-1385, 2013
180 2013 High-current GaSb/InAs (Sb) nanowire tunnel field-effect transistors AW Dey, BM Borg, B Ganjipour, M Ek, KA Dick, E Lind, C Thelander, ...
IEEE Electron device letters 34 (2), 211-213, 2013
148 2013 Vertical InAs Nanowire Wrap Gate Transistors with f t > 7 GHz and f max > 20 GHz M Egard, S Johansson, AC Johansson, KM Persson, AW Dey, BM Borg, ...
Nano letters 10 (3), 809-812, 2010
137 2010 Synthesis and properties of antimonide nanowires BM Borg, LE Wernersson
Nanotechnology 24 (20), 202001, 2013
131 2013 High current density Esaki tunnel diodes based on GaSb-InAsSb heterostructure nanowires B Ganjipour, AW Dey, BM Borg, M Ek, ME Pistol, KA Dick, LE Wernersson, ...
Nano letters 11 (10), 4222-4226, 2011
131 2011 GaAs/GaSb nanowire heterostructures grown by MOVPE M Jeppsson, KA Dick, JB Wagner, P Caroff, K Deppert, L Samuelson, ...
Journal of Crystal Growth 310 (18), 4115-4121, 2008
120 2008 Single InAs/GaSb nanowire low-power CMOS inverter AW Dey, J Svensson, BM Borg, M Ek, LE Wernersson
Nano letters 12 (11), 5593-5597, 2012
108 2012 Lateral InAs/Si p-type tunnel FETs integrated on Si—Part 2: Simulation study of the impact of interface traps S Sant, K Moselund, D Cutaia, H Schmid, M Borg, H Riel, A Schenk
IEEE Transactions on Electron Devices 63 (11), 4240-4247, 2016
94 2016 High transconductance self-aligned gate-last surface channel In0.53 Ga0.47 As MOSFET M Egard, L Ohlsson, BM Borg, F Lenrick, R Wallenberg, LE Wernersson, ...
2011 International Electron Devices Meeting, 13.2. 1-13.2. 4, 2011
94 2011 Analysis of strain and stacking faults in single nanowires using Bragg coherent diffraction imaging V Favre-Nicolin, F Mastropietro, J Eymery, D Camacho, YM Niquet, ...
New Journal of Physics 12 (3), 035013, 2010
90 2010 Tuning oxygen vacancies and resistive switching properties in ultra-thin HfO2 RRAM via TiN bottom electrode and interface engineering Z Yong, KM Persson, MS Ram, G D'Acunto, Y Liu, S Benter, J Pan, Z Li, ...
Applied Surface Science 551, 149386, 2021
89 2021 High-performance inas nanowire mosfets AW Dey, C Thelander, E Lind, KA Dick, BM Borg, M Borgstrom, P Nilsson, ...
IEEE Electron Device Letters 33 (6), 791-793, 2012
83 2012 Enhanced Sb incorporation in InAsSb nanowires grown by metalorganic vapor phase epitaxy BM Borg, KA Dick, J Eymery, LE Wernersson
Applied Physics Letters 98 (11), 2011
83 2011 High-Frequency Performance of Self-Aligned Gate-Last Surface Channel M Egard, L Ohlsson, M Arlelid, KM Persson, BM Borg, F Lenrick, ...
IEEE Electron Device Letters 33 (3), 369-371, 2012
79 2012 
Kimberly DickProfessor of Materials Science, Lund UniversityEmail confirmado em ftf.lth.se