Microscopic dielectric permittivities of graphene nanoribbons and graphene J Fang, WG Vandenberghe, MV Fischetti
Physical Review B 94 (4), 045318, 2016
81 2016 Multiple defects cause degradation after high field stress in AlGaN/GaN HEMTs R Jiang, X Shen, J Fang, P Wang, EX Zhang, J Chen, DM Fleetwood, ...
IEEE Transactions on Device and Materials Reliability 18 (3), 364-376, 2018
64 2018 Electron Transport Properties of J Fang, MV Fischetti, RD Schrimpf, RA Reed, E Bellotti, ST Pantelides
Physical Review Applied 11 (4), 044045, 2019
36 2019 Understanding the average electron–hole pair-creation energy in silicon and germanium based on full-band Monte Carlo simulations J Fang, M Reaz, SL Weeden-Wright, RD Schrimpf, RA Reed, RA Weller, ...
IEEE Transactions on Nuclear Science 66 (1), 444-451, 2018
36 2018 Pseudopotential-based electron quantum transport: Theoretical formulation and application to nanometer-scale silicon nanowire transistors J Fang, WG Vandenberghe, B Fu, MV Fischetti
Journal of Applied Physics 119 (3), 2016
30 2016 Theoretical study of ballistic transport in silicon nanowire and graphene nanoribbon field-effect transistors using empirical pseudopotentials J Fang, S Chen, WG Vandenberghe, MV Fischetti
IEEE Transactions on Electron Devices 64 (6), 2758-2764, 2017
29 2017 3-D full-band Monte Carlo simulation of hot-electron energy distributions in gate-all-around Si nanowire MOSFETs M Reaz, AM Tonigan, K Li, MB Smith, MW Rony, M Gorchichko, A O’Hara, ...
IEEE Transactions on Electron Devices 68 (5), 2556-2563, 2021
16 2021 Back barrier trapping induced resistance dispersion in GaN HEMT: Mechanism, modeling, and solutions H Yu, B Parvais, U Peralagu, RY ElKashlan, R Rodriguez, A Khaled, ...
2022 International Electron Devices Meeting (IEDM), 30.6. 1-30.6. 4, 2022
11 2022 Charge movement in back barrier induced time-dependent on-state breakdown of GaN HEMT H Yu, J Fang, B Vermeersch, U Peralagu, H Han, O Richard, A Alian, ...
2023 International Electron Devices Meeting (IEDM), 1-4, 2023
2 2023 Ab initio Methods for Electronic Transport in Semiconductors and NanostructuresMV Fischetti, WG Vandenberghe, MLV Put, G Gaddemane, J Fang
Springer Handbook of Semiconductor Devices, 1515-1558, 2022
2 2022 Full-band ballistic quantum transport in nanostructures using empirical pseudopotentials J Fang, W Vandenberghe, MV Fischetti
2014 International Workshop on Computational Electronics (IWCE), 1-3, 2014
2 2014 Transistors performance in the sub-1 nm technology node based on one-dimensional nanomaterials J Fang, WG Vandenberghe, MV Fischetti
2015 International Conference on Simulation of Semiconductor Processes and …, 2015
1 2015 Progress on quantum transport simulation using empirical pseudopotentials J Fang, W Vandenberghe, M Fischetti
2015 International Workshop on Computational Electronics (IWCE), 1-3, 2015
1 2015 Unified Mechanism for Graphene FET's Electrothermal Breakdown and Its Implications on Safe Operating Limits M Reaz, AM Tonigan, K Li, MB Smith, MW Rony, M Gorchichko, A O'Hara, ...
IEEE TRANSACTIONS ON ELECTRON DEVICES 68 (5), 2556-2563, 2021
2021 First-principles Monte Carlo simulation of electron transport in Alx Ga1-x N/GaN high-electron-mobility transistors J Fang, R Schrimpf, M Fischetti, S Pantelides
APS March Meeting Abstracts 2018, R07. 002, 2018
2018 Quantum transport and dielectric response of nanometer scale transistors using empirical pseudopotentials J Fang
The University of Texas at Dallas, 2016
2016 Plane-wave-basis quantum transport in sub-1 nm technology node transistors J Fang, W Vandenberghe, M Fischetti
TECHCON 2015, 1-4, 2015
2015 Three-dimensional plane-wave full-band quantum transport using empirical pseudopotentials J Fang, W Vandenberghe, M Fischetti
APS March Meeting Abstracts 2015, G15. 013, 2015
2015 Full-band Quantum Transport in Nanotransistors using Empirical Pseudopotentials J Fang, W Vandenberghe, M Fischetti
TECHCON 2014, 1-4, 2014
2014 Full band quantum transport using mixed supercell and envelop function method J Fang, W Vandenberghe, M Fischetti
APS March Meeting Abstracts 2014, T53. 003, 2014
2014 
Massimo V FischettiThe University of Texas at DallasEmail confirmado em utdallas.edu