Multiring Circular Transmission Line Model for Ultralow Contact Resistivity Extraction H Yu, M Schaekers, T Schram, E Rosseel, K Martens, S Demuynck, ...
Electron Device Letters, IEEE 36 (6), 600-602, 2015
85 2015 1.5× 10− 9 Ωcm2 Contact resistivity on highly doped Si: P using Ge pre-amorphization and Ti silicidation H Yu, M Schaekers, E Rosseel, A Peter, JG Lee, WB Song, S Demuynck, ...
2015 IEEE International Electron Devices Meeting (IEDM), 21.7. 1-21.7. 4, 2015
72 2015 A simplified method for (circular) transmission line model simulation and ultralow contact resistivity extraction H Yu, M Schaekers, T Schram, N Collaert, K De Meyer, N Horiguchi, ...
IEEE Electron Device Letters 35 (9), 957-959, 2014
64 2014 Titanium Silicide on Si:P With Precontact Amorphization Implantation Treatment: Contact Resistivity Approaching H Yu, M Schaekers, A Peter, G Pourtois, E Rosseel, JG Lee, WB Song, ...
IEEE Transactions on Electron Devices 63 (12), 4632-4641, 2016
60 2016 Selective epitaxial growth of high-P Si: P for source/drain formation in advanced Si nFETs E Rosseel, SK Dhayalan, AY Hikavyy, R Loo, HB Profijt, D Kohen, ...
ECS Transactions 75 (8), 347, 2016
55 2016 Thermal Stability Concern of Metal-Insulator-Semiconductor Contact: A Case Study of Ti/TiO2 /n-Si Contact H Yu, M Schaekers, T Schram, S Demuynck, N Horiguchi, K Barla, ...
IEEE Transactions on Electron Devices 63 (7), 2671-2676, 2016
55 2016 Contact resistivities of metal-insulator-semiconductor contacts and metal-semiconductor contacts H Yu, M Schaekers, K Barla, N Horiguchi, N Collaert, AVY Thean, ...
Applied Physics Letters 108 (17), 2016
45 2016 Sub-10−9 Ω·cm2 contact resistivity on p-SiGe achieved by Ga doping and nanosecond laser activation JL Everaert, M Schaekers, H Yu, LL Wang, A Hikavyy, L Date, ...
2017 Symposium on VLSI Technology, T214-T215, 2017
41 2017 Low-resistance titanium contacts and thermally unstable nickel germanide contacts on p-type germanium H Yu, M Schaekers, T Schram, W Aderhold, AJ Mayur, J Mitard, L Witters, ...
IEEE Electron Device Letters 37 (4), 482-485, 2016
40 2016 TiSi(Ge) Contacts Formed at Low Temperature Achieving Around H Yu, M Schaekers, J Zhang, LL Wang, JL Everaert, N Horiguchi, ...
IEEE Transactions on Electron Devices 64 (2), 500-506, 2017
38 2017 Ultralow-resistivity CMOS contact scheme with pre-contact amorphization plus Ti (germano-) silicidation H Yu, M Schaekers, A Hikavyy, E Rosseel, A Peter, K Hollar, FA Khaja, ...
2016 IEEE Symposium on VLSI Technology, 1-2, 2016
36 2016 Ultralow resistive wrap around contact to scaled FinFET devices by using ALD-Ti contact metal SA Chew, H Yu, M Schaekers, S Demuynck, G Mannaert, E Kunnen, ...
2017 IEEE International Interconnect Technology Conference (IITC), 1-3, 2017
32 2017 Comprehensive study of Ga activation in Si, SiGe and Ge with 5 × 10−10 Ω·cm2 contact resistivity achieved on Ga doped Ge using nanosecond laser activation LL Wang, H Yu, M Schaekers, JL Everaert, A Franquet, B Douhard, L Date, ...
2017 IEEE International Electron Devices Meeting (IEDM), 22.4. 1-22.4. 4, 2017
31 2017 First demonstration of III-V HBTs on 300 mm Si substrates using nano-ridge engineering A Vais, L Witters, Y Mols, AS Hernandez, A Walke, H Yu, M Baryshnikova, ...
2019 IEEE International Electron Devices Meeting (IEDM), 9.1. 1-9.1. 4, 2019
28 2019 Lanthanum and lanthanum silicide contacts on N-type silicon H Yu, LL Wang, M Schaekers, JL Everaert, YL Jiang, D Mocuta, ...
IEEE Electron Device Letters 38 (7), 843-846, 2017
26 2017 Polarization fatigue in ferroelectric vinylidene fluoride and trifluoroethylene copolymer thin films GD Zhu, Y Gu, H Yu, SS Fu, YL Jiang
Journal of Applied Physics 110 (2), 2011
22 2011 Study of the intrinsic limitations of the contact resistance of metal/semiconductor interfaces through atomistic simulations A Dabral, G Pourtois, K Sankaran, W Magnus, H Yu, AJ de Meux, AKA Lu, ...
ECS Journal of Solid State Science and Technology 7 (6), N73, 2018
17 2018 Study of nickel silicide formation on Si (1 1 0) substrate X Guo, H Yu, YL Jiang, GP Ru, DW Zhang, BZ Li
Applied surface science 257 (24), 10571-10575, 2011
17 2011 MIS or MS? Source/drain contact scheme evaluation for 7nm Si CMOS technology and beyond H Yu, M Schaekers, S Demuynck, K Barla, A Mocuta, N Horiguchi, ...
2016 16th International Workshop on Junction Technology (IWJT), 19-24, 2016
16 2016 Characterization of ultra-thin nickel–silicide films synthesized using the solid state reaction of Ni with an underlying Si: P substrate (P: 0.7 to 4.0%) AP Peter, H Yu, S Dutta, E Rosseel, S Van Elshocht, K Paulussen, ...
Microelectronic Engineering 157, 52-59, 2016
14 2016 
Nadine CollaertimecEmail confirmado em imec.be