| Dielectric properties of hexagonal boron nitride and transition metal dichalcogenides: from monolayer to bulk A Laturia, ML Van de Put, WG Vandenberghe npj 2D Materials and Applications 2 (1), 6, 2018 | 858 | 2018 |
| Direct and Indirect Band-to-Band Tunneling in Germanium-Based TFETs KH Kao, AS Verhulst, WG Vandenberghe, B Sorée, G Groeseneken, ... Electron Devices, IEEE Transactions on 59 (2), 292-301, 2011 | 497 | 2011 |
| Tunnel field-effect transistor without gate-drain overlap AS Verhulst, WG Vandenberghe, K Maex, G Groeseneken Applied Physics Letters 91 (5), 2007 | 491 | 2007 |
| Modeling the single-gate, double-gate, and gate-all-around tunnel field-effect transistor AS Verhulst, B Sorée, D Leonelli, WG Vandenberghe, G Groeseneken Journal of Applied Physics 107 (2), 2010 | 287 | 2010 |
| Complementary silicon-based heterostructure tunnel-FETs with high tunnel rates AS Verhulst, WG Vandenberghe, K Maex, S De Gendt, MM Heyns, ... IEEE electron device letters 29 (12), 1398-1401, 2008 | 223 | 2008 |
| Boosting the on-current of a n-channel nanowire tunnel field-effect transistor by source material optimization AS Verhulst, WG Vandenberghe, K Maex, G Groeseneken Journal of Applied Physics 104 (6), 2008 | 171 | 2008 |
| Optimization of gate-on-source-only tunnel FETs with counter-doped pockets KH Kao, AS Verhulst, WG Vandenberghe, B Soree, W Magnus, D Leonelli, ... IEEE Transactions on Electron Devices 59 (8), 2070-2077, 2012 | 164 | 2012 |
| Charge Mediated Reversible Metal–Insulator Transition in Monolayer MoTe2 and WxMo1–xTe2 Alloy C Zhang, S Kc, Y Nie, C Liang, WG Vandenberghe, RC Longo, Y Zheng, ... ACS nano 10 (8), 7370-7375, 2016 | 163 | 2016 |
| Figure of merit for and identification of sub-60 mV/decade devices WG Vandenberghe, AS Verhulst, B Sorée, W Magnus, G Groeseneken, ... Applied Physics Letters 102, 013510, 2013 | 132 | 2013 |
| High‐mobility helical tellurium field‐effect transistors enabled by transfer‐free, low‐temperature direct growth G Zhou, R Addou, Q Wang, S Honari, CR Cormier, L Cheng, R Yue, ... Advanced Materials 30 (36), 1803109, 2018 | 129 | 2018 |
| A novel PNPN-like Z-shaped tunnel field-effect transistor with improved ambipolar behavior and RF performance RM Imenabadi, M Saremi, WG Vandenberghe IEEE transactions on electron devices 64 (11), 4752-4758, 2017 | 126 | 2017 |
| Impact of field-induced quantum confinement in tunneling field-effect devices WG Vandenberghe, B Sorée, W Magnus, G Groeseneken, MV Fischetti Applied Physics Letters 98 (14), 2011 | 126 | 2011 |
| Analytical model for point and line tunneling in a tunnel field-effect transistor W Vandenberghe, AS Verhulst, G Groeseneken, B Soree, W Magnus 2008 international conference on simulation of semiconductor processes and …, 2008 | 126 | 2008 |
| Analytical model for a tunnel field-effect transistor WG Vandenberghe, AS Verhulst, G Groeseneken, B Soree, W Magnus MELECON 2008-The 14th IEEE mediterranean electrotechnical conference, 923-928, 2008 | 114 | 2008 |
| Mermin-Wagner theorem, flexural modes, and degraded carrier mobility in two-dimensional crystals with broken horizontal mirror symmetry MV Fischetti, WG Vandenberghe Physical Review B 93 (15), 155413, 2016 | 110 | 2016 |
| Imperfect two-dimensional topological insulator field-effect transistors WG Vandenberghe, MV Fischetti Nature communications 8 (1), 14184, 2017 | 106 | 2017 |
| Theoretical studies of electronic transport in monolayer and bilayer phosphorene: A critical overview G Gaddemane, WG Vandenberghe, ML Van de Put, S Chen, S Tiwari, ... Physical Review B 98 (11), 115416, 2018 | 101 | 2018 |
| Advanced physics of electron transport in semiconductors and nanostructures MV Fischetti, WG Vandenberghe Springer, 2016 | 96 | 2016 |
| Microscopic dielectric permittivities of graphene nanoribbons and graphene J Fang, WG Vandenberghe, MV Fischetti Physical Review B 94 (4), 045318, 2016 | 81 | 2016 |
| Tunnel field-effect transistor with gated tunnel barrier WG Vandenberghe, AS Verhulst US Patent 8,120,115, 2012 | 79 | 2012 |
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