Ultrafast terahertz probes of transient conducting and insulating phases in an electron–hole gas RA Kaindl, MA Carnahan, D Hägele, R Lövenich, DS Chemla
Nature 423 (6941), 734-738, 2003
541 2003 Spin transport in GaAs D Hägele, M Oestreich, WW Rühle, N Nestle, K Eberl
Applied physics letters 73 (11), 1580-1582, 1998
304 1998 Spin injection into semiconductors M Oestreich, J Hübner, D Hägele, PJ Klar, W Heimbrodt, WW Rühle, ...
Applied physics letters 74 (9), 1251-1253, 1999
283 1999 Laser threshold reduction in a spintronic device J Rudolph, D Hagele, HM Gibbs, G Khitrova, M Oestreich
Applied Physics Letters 82 (25), 4516-4518, 2003
241 2003 Spin noise spectroscopy in GaAs M Oestreich, M Römer, RJ Haug, D Hägele
Physical review letters 95 (21), 216603, 2005
239 2005 Transient terahertz spectroscopy of excitons and unbound carriers in quasi-two-dimensional electron-hole gases RA Kaindl, D Hägele, MA Carnahan, DS Chemla
Physical Review B—Condensed Matter and Materials Physics 79 (4), 045320, 2009
212 2009 Anomalous Spin Dephasing in (110) GaAs Quantum Wells:<? format?> Anisotropy and Intersubband Effects S Döhrmann, D Hägele, J Rudolph, M Bichler, D Schuh, M Oestreich
Physical review letters 93 (14), 147405, 2004
205 2004 Room-temperature threshold reduction in vertical-cavity surface-emitting lasers by injection of spin-polarized electrons J Rudolph, S Döhrmann, D Hägele, M Oestreich, W Stolz
Applied Physics Letters 87 (24), 2005
128 2005 Optical orientation of electron spins in GaAs quantum wells S Pfalz, R Winkler, T Nowitzki, D Reuter, AD Wieck, D Hägele, ...
Physical Review B—Condensed Matter and Materials Physics 71 (16), 165305, 2005
123 2005 Spin injection, spin transport and spin coherence M Oestreich, M Bender, J Hübner, D Hägele, WW Rühle, T Hartmann, ...
Semiconductor science and technology 17 (4), 285, 2002
100 2002 Circular photogalvanic effect at inter-band excitation in semiconductor quantum wells VV Bel'Kov, SD Ganichev, P Schneider, C Back, M Oestreich, J Rudolph, ...
Solid state communications 128 (8), 283-286, 2003
80 2003 Temperature dependence of electron spin relaxation in bulk GaN JH Buß, J Rudolph, F Natali, F Semond, D Hägele
Physical Review B—Condensed Matter and Materials Physics 81 (15), 155216, 2010
78 2010 Temperature-dependent electron Landé J Hübner, S Döhrmann, D Hägele, M Oestreich
Physical Review B—Condensed Matter and Materials Physics 79 (19), 193307, 2009
64 2009 Spintronics: Spin electronics and optoelectronics in semiconductors M Oestreich, J Hübner, D Hägele, M Bender, N Gerhardt, M Hofmann, ...
Advances in Solid State Physics, 173-186, 2001
62 2001 Anisotropic electron spin relaxation in bulk GaN JH Buss, J Rudolph, F Natali, F Semond, D Hägele
Applied Physics Letters 95 (19), 2009
48 2009 Ultrafast spin noise spectroscopy S Starosielec, D Hägele
Applied Physics Letters 93 (5), 2008
43 2008 Discrete-time windows with minimal RMS bandwidth for given RMS temporal width S Starosielec, D Hägele
Signal Processing 102, 240-246, 2014
39 2014 Temperature dependent low-field measurements of the magnetocaloric ΔT with sub-mK resolution in small volume and thin film samples J Döntgen, J Rudolph, T Gottschall, O Gutfleisch, S Salomon, A Ludwig, ...
Applied Physics Letters 106 (3), 2015
31 2015 Dyakonov-Perel electron spin relaxation in a wurtzite semiconductor: From the nondegenerate to the highly degenerate regime JH Buß, J Rudolph, S Starosielec, A Schaefer, F Semond, Y Cordier, ...
Physical Review B—Condensed Matter and Materials Physics 84 (15), 153202, 2011
31 2011 Long room-temperature electron spin lifetimes in highly doped cubic GaN JH Buß, J Rudolph, T Schupp, DJ As, K Lischka, D Hägele
Applied Physics Letters 97 (6), 2010
30 2010 
Robert A. KaindlDepartment of Physics and CXFEL Laboratory, Arizona State UniversityEmail confirmado em asu.edu
