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Jin-Goo Park
Jin-Goo Park
Professor of Materials Engineering, Hanyang University
E-mail confirmado em hanyang.ac.kr - Página inicial
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Interfacial and electrokinetic characterization of IPA solutions related to semiconductor wafer drying and cleaning
JG Park, SH Lee, JS Ryu, YK Hong, TG Kim, AA Busnaina
Journal of the Electrochemical society 153 (9), G811, 2006
1292006
Evaluation of double sided lapping using a fixed abrasive pad for sapphire substrates
HM Kim, R Manivannan, DJ Moon, H Xiong, JG Park
Wear 302 (1-2), 1340-1344, 2013
1072013
Scratch formation and its mechanism in chemical mechanical planarization (CMP)
TY Kwon, M Ramachandran, JG Park
Friction 1, 279-305, 2013
1052013
The effect of additives in post-Cu CMP cleaning on particle adhesion and removal
YK Hong, DH Eom, SH Lee, TG Kim, JG Park, AA Busnaina
Journal of The Electrochemical Society 151 (11), G756, 2004
782004
Investigation of cu-BTA complex formation during Cu chemical mechanical planarization process
BJ Cho, S Shima, S Hamada, JG Park
Applied Surface Science 384, 505-510, 2016
772016
Large scale directed assembly of nanoparticles using nanotrench templates
X Xiong, P Makaram, A Busnaina, K Bakhtari, S Somu, N McGruer, J Park
Applied physics letters 89 (19), 2006
752006
On the mechanism of material removal by fixed abrasive lapping of various glass substrates
BJ Cho, HM Kim, R Manivannan, DJ Moon, JG Park
Wear 302 (1-2), 1334-1339, 2013
712013
Characterization of TMAH based cleaning solution for post Cu-CMP application
RP Venkatesh, TY Kwon, YN Prasad, S Ramanathan, JG Park
Microelectronic engineering 102, 74-80, 2013
692013
Effect of pH in Ru slurry with sodium periodate on Ru CMP
IK Kim, BG Cho, JG Park, JY Park, HS Park
Journal of the Electrochemical Society 156 (3), H188, 2009
672009
Comparison between sapphire lapping processes using 2-body and 3-body modes as a function of diamond abrasive size
HM Kim, GH Park, YG Seo, DJ Moon, BJ Cho, JG Park
Wear 332, 794-799, 2015
602015
Effect of dissolved gases in water on acoustic cavitation and bubble growth rate in 0.83 MHz megasonic of interest to wafer cleaning
BK Kang, MS Kim, JG Park
Ultrasonics sonochemistry 21 (4), 1496-1503, 2014
572014
Selection and optimization of corrosion inhibitors for improved Cu CMP and post-Cu CMP cleaning
HY Ryu, BJ Cho, NP Yerriboina, CH Lee, JK Hwang, S Hamada, Y Wada, ...
ECS Journal of Solid State Science and Technology 8 (5), P3058, 2019
552019
Tricritical point and magnetocaloric effect of Nd1− xSrxMnO3
R Venkatesh, M Pattabiraman, K Sethupathi, G Rangarajan, ...
Journal of Applied Physics 103 (7), 2008
552008
Characterization of non-amine-based post-copper chemical mechanical planarization cleaning solution
R Manivannan, BJ Cho, X Hailin, S Ramanathan, JG Park
Microelectronic engineering 122, 33-39, 2014
532014
The effect of hydrogen peroxide in a citric acid based copper slurry on Cu polishing
DH Eom, IK Kim, JH Han, JG Park
Journal of the Electrochemical Society 154 (1), D38, 2006
512006
Interaction forces between silica particles and wafer surfaces during chemical mechanical planarization of copper
SY Lee, SH Lee, JG Park
Journal of The Electrochemical Society 150 (5), G327, 2003
482003
Generation of pad debris during oxide CMP process and its role in scratch formation
YN Prasad, TY Kwon, IK Kim, IG Kim, JG Park
Journal of the Electrochemical Society 158 (4), H394, 2011
452011
Electrochemical impedance spectroscopy (EIS) analysis of BTA removal by TMAH during post Cu CMP cleaning process
RP Venkatesh, BJ Cho, S Ramanathan, JG Park
Journal of The Electrochemical Society 159 (11), C447, 2012
422012
Effects of drying methods and wettability of silicon on the formation of water marks in semiconductor processing
JG Park, MF Pas
Journal of the Electrochemical Society 142 (6), 2028, 1995
421995
Effect of lanthanum doping in ceria abrasives on chemical mechanical polishing selectivity for shallow trench isolation
BVS Praveen, BJ Cho, JG Park, S Ramanathan
Materials Science in Semiconductor Processing 33, 161-168, 2015
402015
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Artigos 1–20