Interfacial and electrokinetic characterization of IPA solutions related to semiconductor wafer drying and cleaning JG Park, SH Lee, JS Ryu, YK Hong, TG Kim, AA Busnaina Journal of the Electrochemical society 153 (9), G811, 2006 | 129 | 2006 |
Evaluation of double sided lapping using a fixed abrasive pad for sapphire substrates HM Kim, R Manivannan, DJ Moon, H Xiong, JG Park Wear 302 (1-2), 1340-1344, 2013 | 107 | 2013 |
Scratch formation and its mechanism in chemical mechanical planarization (CMP) TY Kwon, M Ramachandran, JG Park Friction 1, 279-305, 2013 | 105 | 2013 |
The effect of additives in post-Cu CMP cleaning on particle adhesion and removal YK Hong, DH Eom, SH Lee, TG Kim, JG Park, AA Busnaina Journal of The Electrochemical Society 151 (11), G756, 2004 | 78 | 2004 |
Investigation of cu-BTA complex formation during Cu chemical mechanical planarization process BJ Cho, S Shima, S Hamada, JG Park Applied Surface Science 384, 505-510, 2016 | 77 | 2016 |
Large scale directed assembly of nanoparticles using nanotrench templates X Xiong, P Makaram, A Busnaina, K Bakhtari, S Somu, N McGruer, J Park Applied physics letters 89 (19), 2006 | 75 | 2006 |
On the mechanism of material removal by fixed abrasive lapping of various glass substrates BJ Cho, HM Kim, R Manivannan, DJ Moon, JG Park Wear 302 (1-2), 1334-1339, 2013 | 71 | 2013 |
Characterization of TMAH based cleaning solution for post Cu-CMP application RP Venkatesh, TY Kwon, YN Prasad, S Ramanathan, JG Park Microelectronic engineering 102, 74-80, 2013 | 69 | 2013 |
Effect of pH in Ru slurry with sodium periodate on Ru CMP IK Kim, BG Cho, JG Park, JY Park, HS Park Journal of the Electrochemical Society 156 (3), H188, 2009 | 67 | 2009 |
Comparison between sapphire lapping processes using 2-body and 3-body modes as a function of diamond abrasive size HM Kim, GH Park, YG Seo, DJ Moon, BJ Cho, JG Park Wear 332, 794-799, 2015 | 60 | 2015 |
Effect of dissolved gases in water on acoustic cavitation and bubble growth rate in 0.83 MHz megasonic of interest to wafer cleaning BK Kang, MS Kim, JG Park Ultrasonics sonochemistry 21 (4), 1496-1503, 2014 | 57 | 2014 |
Selection and optimization of corrosion inhibitors for improved Cu CMP and post-Cu CMP cleaning HY Ryu, BJ Cho, NP Yerriboina, CH Lee, JK Hwang, S Hamada, Y Wada, ... ECS Journal of Solid State Science and Technology 8 (5), P3058, 2019 | 55 | 2019 |
Tricritical point and magnetocaloric effect of Nd1− xSrxMnO3 R Venkatesh, M Pattabiraman, K Sethupathi, G Rangarajan, ... Journal of Applied Physics 103 (7), 2008 | 55 | 2008 |
Characterization of non-amine-based post-copper chemical mechanical planarization cleaning solution R Manivannan, BJ Cho, X Hailin, S Ramanathan, JG Park Microelectronic engineering 122, 33-39, 2014 | 53 | 2014 |
The effect of hydrogen peroxide in a citric acid based copper slurry on Cu polishing DH Eom, IK Kim, JH Han, JG Park Journal of the Electrochemical Society 154 (1), D38, 2006 | 51 | 2006 |
Interaction forces between silica particles and wafer surfaces during chemical mechanical planarization of copper SY Lee, SH Lee, JG Park Journal of The Electrochemical Society 150 (5), G327, 2003 | 48 | 2003 |
Generation of pad debris during oxide CMP process and its role in scratch formation YN Prasad, TY Kwon, IK Kim, IG Kim, JG Park Journal of the Electrochemical Society 158 (4), H394, 2011 | 45 | 2011 |
Electrochemical impedance spectroscopy (EIS) analysis of BTA removal by TMAH during post Cu CMP cleaning process RP Venkatesh, BJ Cho, S Ramanathan, JG Park Journal of The Electrochemical Society 159 (11), C447, 2012 | 42 | 2012 |
Effects of drying methods and wettability of silicon on the formation of water marks in semiconductor processing JG Park, MF Pas Journal of the Electrochemical Society 142 (6), 2028, 1995 | 42 | 1995 |
Effect of lanthanum doping in ceria abrasives on chemical mechanical polishing selectivity for shallow trench isolation BVS Praveen, BJ Cho, JG Park, S Ramanathan Materials Science in Semiconductor Processing 33, 161-168, 2015 | 40 | 2015 |